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    TRANSISTOR S34 Search Results

    TRANSISTOR S34 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S34 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC MARKING surface

    Abstract: C11531E FP1F3P nec S33
    Text: DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive


    Original     		PDF C11531E) NEC MARKING surface C11531E FP1F3P nec S33

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    IR s27

    Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
    Text: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.


    Original     		PDF HT48RA0-5 HT622x) HT48RA0-5 20SSOP) IR s27 infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    transistor T43

    Abstract: BUK553-60A BUK553-60B
    Text: N AMER PHILIPS/DISCRETE b^E » b b iB 'm □G3G7E1D 3TB • APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK553-60A/B t0220ab BUK553-60A/B transistor T43 BUK553-60A BUK553-60B

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    s34 diode

    Abstract: KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22
    Text: ?<WEREX KS221K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ilic ic D â r H t lQ tO n Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS221K15 Amperes/1000 s34 diode KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22

    Untitled

    Abstract: No abstract text available
    Text: KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D s r lin C jtO P Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621230 Amperes/1200 7214b21

    Untitled

    Abstract: No abstract text available
    Text: m m am x KS221K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S Ín Q l& D d rU n Q tO H Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS221K15 Amperes/1000 75T4bai i4b21

    BLX14

    Abstract: vhf power transistor 50W "class AB Linear" hf philips Fxc 3 b hf amplifier 3h1 4322-020 75W HI FI AMPLIFIER 50w CLASS D amplifier SOT-55 0/vhf power transistor 50W
    Text: N AMER PHILIPS/DISCRETE b^E D • bbS3^31 QOETSbl T52 BLX14 IAPX I H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 MHz to 28 MHz


    OCR Scan     		PDF BLX14 70ues BLX14 vhf power transistor 50W "class AB Linear" hf philips Fxc 3 b hf amplifier 3h1 4322-020 75W HI FI AMPLIFIER 50w CLASS D amplifier SOT-55 0/vhf power transistor 50W

    Untitled

    Abstract: No abstract text available
    Text: h 7 'y V . • UMG1N/FMG1A $ /Transistors M n M h7 > y^ ^/D ual Mini-Mold Transistor FMG1A Epitaxial Planar NPN Silicon Transistor -f ^ K v'T /’t/inverter Driver • • £wf£‘T S 0 /D im e n s io n s Unit : mm) 1) K A -.y ^ -v T ' 2 f@<D x v 2 J U h ^ > V X $ £ F*3


    OCR Scan     		PDF 10Qu20Qu 50m100m

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF BFP182 900MHz 2-F1396 OT-143 2565b fiE35bD5

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1137 International lögRectifier IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ms @ 125°C, V qe = 15V • Switching-ioss rating includes all “tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPH20M 10kHz) C-467 S5452 O-247AC C-468

    VPT05155

    Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
    Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF VPT05155 O-220 C67078-S1321-A2 VPT05155 buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051

    transistor s34

    Abstract: MPSH11 MPS-H11
    Text: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to


    OCR Scan     		PDF MMBTH11 MPSH11 OT-23 bSD113D transistor s34 MPSH11 MPS-H11

    HCT780

    Abstract: Transistor 2N2222A 2N2222A
    Text: OPTEK Product Bulletin HCT780 May 1993 Surface Mount Quad NPN Transistor Type HCT780 .200 5 08 050 (1 27) REF 350 (8 89) SO .050 (1.27) REF 1 200 (S 08) 075 (1 31) 025 (0.64) 085 (2.IB) 075 (1 91) - ' REF DIMENSIONS ARE IN INCHES (MILLIMETERS) 0B3 (1.60)


    OCR Scan     		PDF HCT780 HCT780 2N2222A MIL-S-19500TX 2N2222A 100MHz 100kHz Transistor 2N2222A

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 SGS-THOMSON V # ^D g^ [iL[l TO(MD(gi MJE3439-SGS3439 MJE3440-SGS3440 HIGH VOLTAGE TRANSISTOR D E S C R IP T IO N The MJE3439, MJE3440, SGS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­ tively in TO -126 and SOT-82 plastic package. They


    OCR Scan     		PDF MJE3439-SGS3439 MJE3440-SGS3440 MJE3439, MJE3440, SGS3439 SGS3440 OT-82 JE3440 S3439 JE3439

    JE3439

    Abstract: SGS3439
    Text: ‘ •_ Tggq1 5 3 7 QQa g i o 1 M Ml ^ SGS-THOMSON t^DO^ ILi©1T[H] â [MD(gl 3 3 -o 7 _ MJE3439-SGS3439 MJE3440-SGS3440 S G S-THOMSON 3QE » HIGH VOLTAGE TRANSISTOR DESC RIPTIO N The MJE3439, MJE3440, SQS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­


    OCR Scan     		PDF MJE3439-SGS3439 MJE3440-SGS3440 MJE3439, MJE3440, SQS3439 SGS3440 OT-82 O-126 OT-32) S3440 JE3439 SGS3439

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L E S S E Y SE MI CO N D U C T O R S DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3|im technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		PDF DS3581-3 MA5114 MA5114 37bfl522

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc