mmic-amplifier
Abstract: VPS05178 337 BGA
Text: BGA 312 Silicon Bipolar MMIC-Amplifier 3 Cascadable 50 -gain block 11 dB typical gain at 1.0 GHz 4 9 dBm typical P -1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312
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VPS05178
EHA07312
OT-143
Oct-26-1999
mmic-amplifier
VPS05178
337 BGA
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SOT143 DUAL DIODE
Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
Text: BAT15-099 Silicon Dual Schottky Diode DBS mixer applications up to 12 GHz 3 Low noise figure Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration
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BAT15-099
VPS05178
EHA07011
OT143
EHD07083
Jul-31-2001
SOT143 DUAL DIODE
S11 SCHOTTKY diode
BAT15-099
VPS05178
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VPS05178
Abstract: Q62702-F1487 marking code g1s
Text: BF 1012 Silicon N-Channel MOSFET Tetrode 3 • For low noise, high gain controlled input stages up to 1GHz 4 • Operating voltage 12V • Integrated stabilized bias network 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
Q62702-F1487
OT-143
Sep-09-1998
200MHz
VPS05178
marking code g1s
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Q62702-G0043
Abstract: VPS05178
Text: BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz 4 • 12 dBm typical P-1dB at 1.0 GHz • 3 dB-bandwidth: DC to 1.2 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND
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VPS05178
EHA07312
Q62702-G0043
OT-143
Sep-04-1998
Q62702-G0043
VPS05178
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marking 93A
Abstract: TRANSISTOR BI 187
Text: BFP 93A NPN Silicon RF Transistor 3 For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A
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VPS05178
OT-143
900MHz
Oct-12-1999
marking 93A
TRANSISTOR BI 187
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transistor marking 47s
Abstract: VPS05178 BAS40-07 A1 SOT143
Text: BAS40-07 Silicon Schottky Diode 3 General-purpose diode for high-speed switching Circuit protection 4 Voltage clamping High-level detecting and mixing 2 1 VPS05178 BAS40-07 4 1 3 2 EHA07008 Type Marking BAS40-07 47s Pin Configuration 1=C1 2=C2 3=A2
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BAS40-07
VPS05178
EHA07008
OT143
EHB00039
EHB00040
EHB00041
Aug-23-2001
transistor marking 47s
VPS05178
BAS40-07
A1 SOT143
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A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
Text: BAW101 Silicon Switching Diode Array 3 Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW101
VPS05178
EHA07008
OT143
EHN00019
Aug-20-2001
EHB00104
EHB00103
A1 SOT143
VPS05178
BAW101
EHA07008
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MMIC SOT 89 marking CODE
Abstract: Q62702-G0042 VPS05178 BMS 13-58 Type 1
Text: BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz 4 • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND
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VPS05178
EHA07312
Q62702-G0042
OT-143
Sep-04-1998
MMIC SOT 89 marking CODE
Q62702-G0042
VPS05178
BMS 13-58 Type 1
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a3 sot143
Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Text: BAR60, BAR61 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3
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BAR60,
BAR61
BAR60
VPS05178
EHA07013
EHA07014
OT143
a3 sot143
BAR60
BAR61
VPS05178
MARKING 61s
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VPS05178
Abstract: marking BAr EHA07008
Text: BAR 64-07 Silicon PIN Diode Array 3 • High voltage current controlled RF resistor for RF attenuator and switches 4 • Frequency range above 1 MHz • Low resistance and short carrier lifetime 2 • For frequencies up to 3 GHz 1 4 1 3 2 VPS05178 EHA07008
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VPS05178
EHA07008
OT-143
Oct-05-1999
100MHz
EHD07137
EHD07135
EHD07136
VPS05178
marking BAr
EHA07008
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BFP196
Abstract: VPS05178
Text: BFP196 NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Power amplifier for DECT and PCN systems fT = 7.5 GHz 1 VPS05178
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BFP196
VPS05178
OT143
900MHz
Jun-22-2001
BFP196
VPS05178
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BFP181
Abstract: VPS05178
Text: BFP181 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4 fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFP181
VPS05178
OT143
Jun-21-2001
BFP181
VPS05178
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BF1005
Abstract: VPS05178
Text: BF1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF1005
VPS05178
EHA07215
OT143
Jun-28-2001
200MHz
BF1005
VPS05178
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VPS05178
Abstract: SCHOTTKY DIODE SOT-143 EHA07008 W3551
Text: BAT 64-07 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications • Integrated diffused guard ring 4 • Low forward voltage 2 1 4 VPS05178 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
EHA07008
OT-143
50/60Hz,
tempe-07
EHB00153
EHB00058
EHB00057
EHB00059
Oct-07-1999
VPS05178
SCHOTTKY DIODE SOT-143
EHA07008
W3551
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Untitled
Abstract: No abstract text available
Text: BFP181 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4 fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFP181
VPS05178
OT143
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BCV61
Abstract: No abstract text available
Text: BCV61 NPN Silicon Double Transistor 3 To be used as a current mirror Good thermal coupling and VBE matching 4 High current gain Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration
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BCV61
VPS05178
EHA00012
BCV61A
BCV61B
BCV61C
OT143
OT143
BCV61
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Untitled
Abstract: No abstract text available
Text: BCV62 PNP Silicon Double Transistor 3 To be used as a current mirror Good thermal coupling and VBE matching 4 High current gain Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration
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BCV62
VPS05178
EHA00013
BCV62A
BCV62B
BCV62C
OT143
OT143
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Untitled
Abstract: No abstract text available
Text: BFP182 NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFP182
VPS05178
OT143
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sot143 Marking code 53
Abstract: No abstract text available
Text: BF772 NPN Silicon RF Transistor 3 For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter
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BF772
VPS05178
OT143
sot143 Marking code 53
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VPS05178
Abstract: No abstract text available
Text: BF 1009S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9V Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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1009S
VPS05178
EHA07215
OT-143
May-05-1999
200MHz
VPS05178
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VPS05178
Abstract: ma1022
Text: BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
EHA07461
OT-143
Dec-10-1999
VPS05178
ma1022
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Untitled
Abstract: No abstract text available
Text: BF 2040 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
EHA07461
OT-143
Feb-14-2001
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Untitled
Abstract: No abstract text available
Text: BF 2030 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
EHA07461
OT-143
Feb-09-2001
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration
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OCR Scan
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BFP182
900MHz
2-F1396
OT-143
2565b
fiE35bD5
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