a06 transistor
Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability
|
Original
|
BFP450
25-Line
Transistor25
OT343
Q62702-F1590
a06 transistor
Code "A06" RF Semiconductor
transistor A06
f 1405 zs
BFP450
A06 NPN
Siemens 1713
Q62702-F1590
marking A06
SIEMENS BFP450
|
PDF
|
BFP450
Abstract: BGA420
Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability
|
Original
|
BFP450
OT343
BFP450
BGA420
|
PDF
|
marking ans
Abstract: BFP450 BGA420
Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability
|
Original
|
BFP450
OT343
marking ans
BFP450
BGA420
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers Compression point P-1dB = +19 dBm at 1.8 GHz 4 maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz Transition frequency fT = 24 GHz Gold metallization for high reliability
|
Original
|
VPS05605
OT-343
50Ohm
-j100
Nov-17-2000
|
PDF
|
transistor s parameters noise
Abstract: BF 145 transistor
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
|
Original
|
VPS05605
OT-343
50Ohm
-j100
Mar-07-2001
transistor s parameters noise
BF 145 transistor
|
PDF
|
Q62702-F1590
Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability
|
Original
|
VPS05605
Q62702-F1590
OT-343
50Ohm
-j100
Sep-09-1998
Q62702-F1590
5198 transistor equivalent
Transistor C 5198
VPS05605
transistor BI 342 746
|
PDF
|
thermal simulation of IC package
Abstract: VPS05605 24165V
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
|
Original
|
VPS05605
OT-343
50Ohm
-j100
Dec-13-1999
thermal simulation of IC package
VPS05605
24165V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
|
Original
|
BFP450
VPS05605
OT343
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
|
Original
|
BFP450
VPS05605
OT343
|
PDF
|
BFP450
Abstract: ESD spice
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
|
Original
|
BFP450
VPS05605
OT343
50Ohm
-j100
Aug-20-2001
BFP450
ESD spice
|
PDF
|
PCF7931AS
Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
|
Original
|
87C528
X3A-KTY181/1
X3A-OH155
PCF7931AS
PCF7935AS
PCF79730S-3851
PCF7931
PCF7935
PCF7931XP/C
PCF79730S
pcf79735S
PHILIPS PCF7935AS
TDA4859ps
|
PDF
|
on5134
Abstract: philips ON5134 transistor tda3612 OM8838ps BT 804 triac on5134 Transistor on5217 triacs bt 804 600v D203B SMD Transistor W02
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
|
Original
|
DN48A
DN48A
on5134
philips ON5134 transistor
tda3612
OM8838ps
BT 804 triac
on5134 Transistor
on5217
triacs bt 804 600v
D203B
SMD Transistor W02
|
PDF
|
philips ON5134 transistor
Abstract: on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
|
Original
|
DN48A
DN48A
philips ON5134 transistor
on5134
triacs bt 804 600v
BT 804 triac
tda3612
Triac bt 808
SMD Transistor W02
TRIAC BT 812
OM8838ps
D203B
|
PDF
|
PCF7952
Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
|
Original
|
VP22480-3
VP22480-5
VP22530-2
PCF7952
pcf7944
BGY270
PCF7944AT
ON769
ON961
TDA10086HT
pch7970
PCF7341
OH191
|
PDF
|
|
|
PMA-545
Abstract: PL-299 ZVA-24 monolithic circuit layout marking A Monolithic Amplifier marking 5 Monolithic Amplifier MARKING 545 DBM N5242a TB-502 marking package 545 amplifier
Text: Low Noise, High IP3 Monolithic Amplifier 0.1-6 GHz Product Features • Single Positive Supply Voltage, 3V • Low Noise Figure, 0.8 dB typ. at 1GHz • High IP3, 36 dBm typ. 1GHz • Gain, 20dB typ. at 1 GHz • Output Power, up to +20dBm typ. • Micro-miniature size
|
Original
|
20dBm
PMA-545+
DQ849
2002/95/EC)
J-STD-020D
C/85RH
PMA-545
PL-299
ZVA-24
monolithic circuit layout
marking A Monolithic Amplifier
marking 5 Monolithic Amplifier
MARKING 545 DBM
N5242a
TB-502
marking package 545 amplifier
|
PDF
|
433MHZ amplifier 1w
Abstract: transistor a 2601
Text: 19-1185; Rev 2; 5/97 A l i l X I V M 3.6V, 1W RF P o w er Transistors fo r 900M H z A p p licatio n s The MAX2601 is a high-performance silicon bipolar RF po w e r tra n s is to r. The M AX2602 in c lu d e s a h ig h performance silicon bipolar RF power transistor, and a
|
OCR Scan
|
MAX2601/MAX2602
IS-54)
29dBm
-28dBc
MAX2601
AX2602
MAX2601/MAX2602
433MHZ amplifier 1w
transistor a 2601
|
PDF
|
GMA marking
Abstract: No abstract text available
Text: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor
|
OCR Scan
|
130mA
BFG135A
Q62702-F1322
OT-223
900MHz
IS211
GMA marking
|
PDF
|
Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
|
OCR Scan
|
Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
|
PDF
|
a06 transistor
Abstract: CHIP T503 S BFP450 siemens BFP450
Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz
|
OCR Scan
|
25-Line
Transistor25
BFP450
Q62702-F1590
OT343
a06 transistor
CHIP T503 S
BFP450 siemens
BFP450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability
|
OCR Scan
|
Q62702-F1590
OT-343
2200b
IS21I2
fl235bQS
0122QQ7
0235b05
|
PDF
|
c 1027 transistor
Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
Text: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS
|
OCR Scan
|
MAX2102
MAX2406
MAX2410
MAX2411A
OT23-5
MAX2632
MAX2633
OT23-6
MAX2662
MAX2690
c 1027 transistor
TRANSISTOR RF 1049
Power-Amplifier
R1075
|
PDF
|
MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
|
OCR Scan
|
28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF2903 M I C R O -DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems
|
OCR Scan
|
RF2903
RF2903
150MHz
1000MHz
200MHz,
Str00-3C
RF2903PCBA
|
PDF
|
PANDUIT connector 100F
Abstract: IC 40007 RF2903 PCC470C 2 GHz BJT high frequency high power transistor 300mhz bjt n
Text: RF RF2903 MICRO-DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems Product Description
|
OCR Scan
|
RF2903
RF2903
150MHz
1000MHz
200MHz,
-1008CS-270XMBC
MPSS100-3C
IRF2903PCBA.
PANDUIT connector 100F
IC 40007
PCC470C
2 GHz BJT
high frequency high power transistor 300mhz bjt n
|
PDF
|
