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    BFP450 Price and Stock

    Infineon Technologies AG BFP450H6327XTSA1

    RF TRANS NPN 5V 24GHZ SOT343-4
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    DigiKey BFP450H6327XTSA1 Cut Tape 8,257 1
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    BFP450H6327XTSA1 Digi-Reel 8,257 1
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    BFP450H6327XTSA1 Reel 3,000 3,000
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    Mouser Electronics BFP450H6327XTSA1 5,160
    • 1 $0.5
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    Newark BFP450H6327XTSA1 Cut Tape 1
    • 1 $0.562
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    Rochester Electronics BFP450H6327XTSA1 13,150 1
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    Chip One Stop BFP450H6327XTSA1 Cut Tape 2,840
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    EBV Elektronik BFP450H6327XTSA1 579,000 9 Weeks 3,000
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    New Advantage Corporation BFP450H6327XTSA1 462,000 1
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    Rochester Electronics LLC BFP450

    RF SMALL SIGNAL BIPOLAR TRANSIST
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    DigiKey BFP450 Bulk 1,385
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    Infineon Technologies AG BFP450E6433BTMA1

    RF TRANS NPN 5V 24GHZ SOT343-4
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    DigiKey BFP450E6433BTMA1 Reel 10,000
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    Infineon Technologies AG BFP450H6433XTMA1

    RF TRANS NPN 5V 24GHZ SOT343-4
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    DigiKey BFP450H6433XTMA1 Reel 10,000
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    Avnet Americas BFP450H6433XTMA1 Reel 8 Weeks 10,000
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    Infineon Technologies AG BFP450E6327BTSA1

    RF TRANS NPN 5V 24GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP450E6327BTSA1 Digi-Reel 1
    • 1 $0.62
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    BFP450E6327BTSA1 Reel 3,000
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    BFP450E6327BTSA1 Cut Tape 1
    • 1 $0.62
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    BFP450 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP450 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFP450 Infineon Technologies NPN Silicon RF transistor for medium power amplifiers Original PDF
    BFP450 Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.5 V; IC(max): 100.0 mA; Ptot (max): 450.0 mW; fT (typ): 24.0 GHz; F (typ): 1.25 dB; Original PDF
    BFP450 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP450 Siemens NPN Silicon RF Transistor (For medium power amplifiers) Original PDF
    BFP450E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN RF 4.5V SOT-343 Original PDF
    BFP450E6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN RF 4.5V SOT-343 Original PDF
    BFP450E6359 Infineon Technologies TRANS GP BJT NPN 4.5V 0.1A 4 Original PDF
    BFP450E6433 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 4.5V SOT-343 Original PDF
    BFP450E6433 Infineon Technologies TRANS GP BJT NPN 4.5V 0.1A 4 Original PDF
    BFP450E6433BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 4.5V SOT-343 Original PDF
    BFP450GEG Infineon Technologies TRANS GP BJT NPN 4.5V 0. Original PDF
    BFP450H6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 100MA SOT343 Original PDF
    BFP450H6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V 100MA SOT343 Original PDF
    BFP450H6433 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 100MA SOT343 Original PDF
    BFP450H6433XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V 100MA SOT343 Original PDF
    BFP450L6327 Infineon Technologies TRANS GP BJT NPN 4.5V 0.1A 4 Original PDF

    BFP450 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original
    BFP450 VPS05605 OT343 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP450 High Linearity Silicon Bipolar RF Transistor Datasheet Revision 1.1, 2012-09-11 RF & Protection Devices Edition 2012-09-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP PDF

    BFP450 siemens

    Abstract: BFP450 BCR400 C5100pF
    Text: Application Note No. 026 Discrete & RF Semiconductors G. Lohninger A Medium-Power-Amplifier at 1.9 GHz using BFP450 This application note provides general information, print layout and list of used components, circuit layout and measured data of a medium power amplifier at


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    BFP450 BFP450. 30dBm 100pF BFP450 siemens BFP450 BCR400 C5100pF PDF

    BFP450

    Abstract: RF TRANSISTOR 10GHZ 434mhz RF TRANSISTOR 10GHZ low noise BFP740 TR119 MURATA LQW15A LQW15A RF Bipolar Transistor lna x band
    Text: Technical Report, 2009-Feb-11 Technical Report High OIP3 LNA using BFP450 for 434MHz ISM band Application Technical Report TR119 Device: BFP450 Application: High-OIP3 LNA for 434MHz ISM Band Applications


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    2009-Feb-11 BFP450 434MHz TR119 BFP450 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise BFP740 TR119 MURATA LQW15A LQW15A RF Bipolar Transistor lna x band PDF

    BFP450

    Abstract: marking ANs sdars NF50 AN077 C166
    Text: BFP450 High Linearity Low Noise Si NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP BFP450 marking ANs sdars NF50 AN077 C166 PDF

    BFP450

    Abstract: BGA420
    Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability


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    BFP450 OT343 BFP450 BGA420 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original
    BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP450 High Linearity Low Noise Si NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original
    BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original
    BFP450 VPS05605 OT343 PDF

    BFP450

    Abstract: ESD spice
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original
    BFP450 VPS05605 OT343 50Ohm -j100 Aug-20-2001 BFP450 ESD spice PDF

    a06 transistor

    Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability


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    BFP450 25-Line Transistor25 OT343 Q62702-F1590 a06 transistor Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450 PDF

    rf amplifier siemens 10 ghz

    Abstract: BFP450 BFP450 siemens BFP490 C15-1 HF power amplifier AN014 BAV99 BCR400 SCT595
    Text: Application Note No. 050 Discrete & RF Semiconductors M. Amni S. Lau A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490 This application note provides general information, print layout and list of used components, circuit layout and measured data of a power amplifier module at


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    BFP450 BFP490 BFP490. 26dBm 380mA BAV99 100pF rf amplifier siemens 10 ghz BFP450 siemens BFP490 C15-1 HF power amplifier AN014 BAV99 BCR400 SCT595 PDF

    marking ans

    Abstract: BFP450 BGA420
    Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability


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    BFP450 OT343 marking ans BFP450 BGA420 PDF

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


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    540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3 PDF

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 PDF

    3BR0665JF

    Abstract: 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1
    Text: Evaluation boards for Automotive, Industrial and Multimarket Applications 2010 [ www.infineon.com/evalkits ] Contents Automotive 05 Motor control 11 Industrial control & automation 15 Power management 19 Lighting & LED 22 Consumer 25 Communication 30 Microcontroller


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    TC1797, TC1197 TC1797 XC866, XC886, XC888 XC800 XC164CM XE164 B192-H9214-G2-X-7600 3BR0665JF 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    CDSCB10M7GA136

    Abstract: rt data saw 433 rx tx switch 433 BFP450 10dBm saw transistor transmitter CB9 smd transistor Ceramic filter 107ma TH7122.1 murata 10.7MA ceramic filter SFECF10M7HA00
    Text: Application Note Transceiver TH7122x External PA, LNA and TX/RX switch TH7122 and TH71221 with External PA and LNA The output power and the sensitivity of TH7122x transceivers for SRD are enough for many applications. They can deliver up to 10dBm output power and have a sensitivity of up to -105dBm in FSK mode.


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    TH7122x TH7122 TH71221 TH7122x 10dBm -105dBm AN7122x Feb/07 CDSCB10M7GA136 rt data saw 433 rx tx switch 433 BFP450 10dBm saw transistor transmitter CB9 smd transistor Ceramic filter 107ma TH7122.1 murata 10.7MA ceramic filter SFECF10M7HA00 PDF

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


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    20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    a06 transistor

    Abstract: CHIP T503 S BFP450 siemens BFP450
    Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz


    OCR Scan
    25-Line Transistor25 BFP450 Q62702-F1590 OT343 a06 transistor CHIP T503 S BFP450 siemens BFP450 PDF

    2N2222A-PL

    Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A


    OCR Scan
    BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan
    O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF