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    35 micro-X Package MARKING CODE 3

    Abstract: Micro-X marking "K" INFINEON DETAIL marking f infineon GHZ micro-X Package BFY420 S 35 micro-X Package MARKING CODE F 35 micro-X Package MARKING CODE 0 transistor "micro-x" "marking" 3
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For High Gain Low Noise Amplifiers  For Oscillators up to 10 GHz  Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz  Hermetically sealed microwave package


    Original     		PDF BFY420 25-Line Transistor25 BFY420 35 micro-X Package MARKING CODE 3 Micro-X marking "K" INFINEON DETAIL marking f infineon GHZ micro-X Package BFY420 S 35 micro-X Package MARKING CODE F 35 micro-X Package MARKING CODE 0 transistor "micro-x" "marking" 3

    transistor "micro-x" "marking" 3

    Abstract: marking K "micro x" BFY420
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding G ms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY420 Transistor25 transistor "micro-x" "marking" 3 marking K "micro x" BFY420

    BFY42

    Abstract: BFY420
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY420 25-Line Transistor25 QS9000 BFY42 BFY420

    d marking Micro-X

    Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25 QS9000 d marking Micro-X BFY450 RF TRANSISTOR NPN MICRO-X

    Untitled

    Abstract: No abstract text available
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25

    micro-X Package MARKING CODE C

    Abstract: INFINEON DETAIL micro-X Package MARKING CODE 3
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 25-Line Transistor25 BFY405 QS9000 micro-X Package MARKING CODE C INFINEON DETAIL micro-X Package MARKING CODE 3

    marking K "micro x"

    Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz


    Original     		PDF BFY450 Transistor25 marking K "micro x" MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450

    MICROWAVE TRANSITOR

    Abstract: BFY405
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz Outstanding G ms = 23 dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 Transistor25 MICROWAVE TRANSITOR BFY405

    transistor C 5611

    Abstract: INFINEON DETAIL
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Low Current Applications  For Oscillators up to 12 GHz  Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package


    Original     		PDF BFY405 25-Line Transistor25 BFY405 transistor C 5611 INFINEON DETAIL

    a06 transistor

    Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability


    Original     		PDF BFP450 25-Line Transistor25 OT343 Q62702-F1590 a06 transistor Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450

    Untitled

    Abstract: No abstract text available
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Low Current Applications  For Oscillators up to 12 GHz  Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package


    Original     		PDF BFY405 25-Line Transistor25

    RF TRANSISTOR NPN MICRO-X

    Abstract: BFY405
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X BFY405

    Micro-X marking "K"

    Abstract: transistor "micro-x" "marking" 3 micro-X Package MARKING CODE C INFINEON DETAIL
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25 BFY450 Micro-X marking "K" transistor "micro-x" "marking" 3 micro-X Package MARKING CODE C INFINEON DETAIL

    Untitled

    Abstract: No abstract text available
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For High Gain Low Noise Amplifiers  For Oscillators up to 10 GHz  Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz  Hermetically sealed microwave package


    Original     		PDF BFY420 25-Line Transistor25

    SIEMENS BFP405

    Abstract: marking A06 transistor A06
    Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability


    OCR Scan     		PDF BFP405 25-Line Transistor25 62702-F-1592 OT343 SIEMENS BFP405 marking A06 transistor A06

    transistor C 5611

    Abstract: 35 micro-X Package MARKING CODE Q
    Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY450 19dBm 25-Line Transistor25 QS9000 transistor C 5611 35 micro-X Package MARKING CODE Q

    a06 transistor

    Abstract: CHIP T503 S BFP450 siemens BFP450
    Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz


    OCR Scan     		PDF 25-Line Transistor25 BFP450 Q62702-F1590 OT343 a06 transistor CHIP T503 S BFP450 siemens BFP450

    RF TRANSISTOR NPN MICRO-X

    Abstract: No abstract text available
    Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P - i d B =19dBm 1.8 GHz Max. Available Gain G m a = 16dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY450 19dBm Transistor25 QS9000

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY420 Transistor25 QS9000

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY405 Transistor25 QS9000

    microwave transistor siemens

    Abstract: 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S
    Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY420 25-Line Transistor25 QS9000 microwave transistor siemens 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S