AN-994
Abstract: IRG4BC30W-S
Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC30W-S
and10)
AN-994
IRG4BC30W-S
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IRG4BC30S-S
Abstract: No abstract text available
Text: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency
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IRG4BC30S-S
EIA-418.
IRG4BC30S-S
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Untitled
Abstract: No abstract text available
Text: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC30SPbF
O-247AC
25GBT
IRFPE30
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20SPbF
O-220AB
O-220AB
O-220AB.
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Untitled
Abstract: No abstract text available
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
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AN-994
Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
AN-994
C-150
IRGS4B60KD1
IRGSL4B60KD1
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TO-220AB transistor package
Abstract: No abstract text available
Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20SPbF
O-220AB
O-220AB
O-220AB.
TO-220AB transistor package
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Untitled
Abstract: No abstract text available
Text: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency
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IRG4BC30S-S
EIA-418.
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IRF 810
Abstract: IRG4BC30S-S
Text: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency
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IRG4BC30S-S
EIA-418.
IRF 810
IRG4BC30S-S
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Untitled
Abstract: No abstract text available
Text: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC30SPbF
O-247AC
O-247AC
IRFPE30
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035H
Abstract: IRFPE30
Text: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC30SPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
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1902 transistor
Abstract: 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1
Text: Tr 2SE ROHM CORP » T flS Ö T n OOGE^m Transistors#,*- T-Sl-Wo • Transistor Unit Composite Transistor • For Emitter Followers Resistance value Ri R2 Ra (kfi) (Mi) (Ml) 47 47 1.5 Type FMU1 Dimensions (Unit: mm), Vcc (V) Pd (mW) 15 200 Equivalent Integrated Circuits
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RU101K
1902 transistor
2902 TRANSISTOR
BUZZER DRIVER
transistor sit
FMU1
FMU-1
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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OCR Scan
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IRG4PC30S
O-247AC
O-247AC
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ir*c30ud
Abstract: IRGMC30U
Text: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC30U
IRGMC30UD
IRGMC30UU
MIL-S-19500
O-254
ir*c30ud
IRGMC30U
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IRG4PC40S
Abstract: No abstract text available
Text: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC40S
O-247AC
O-247AC
IRG4PC40S
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100-C
Abstract: IRGMC30F 9714A
Text: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC30F
IRGMC30FD
IRGMC30FU
mil-s-19500
O-254
100-C
IRGMC30F
9714A
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2sc 1740 TRANSISTOR equivalent
Abstract: 40HFL60 IRGMC40F 480V1
Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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pd96a
IRGMC40F
IRGMC40FD
IRGMC40FU
MIL-S-19500
O-254
2sc 1740 TRANSISTOR equivalent
40HFL60
IRGMC40F
480V1
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Untitled
Abstract: No abstract text available
Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50F
IRGMC50FD
IRGMC50FU
O-254
4fiSS45S
MIL-S-19500
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IRGMC50F
Abstract: IRGMC50FD IRGMC50FU 39AF
Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50F
IRGMC50FD
IRGMC50FU
MIL-S-19500
O-254
IRGMC50F
IRGMC50FU
39AF
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IRG4BC20KD
Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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IRG4BC20KD
T0220A8
IRG4BC20KD
IGBT IRG4BC20KD
IRGBC20KD2
transistor iqr
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Untitled
Abstract: No abstract text available
Text: PD - 9.1581 International I R Rectifier IRG4PC50S PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized tor minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC50S
O-247AC
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T3D 87
Abstract: t3d 99 G-100 IRGMC50U
Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50U
IRGMC50U
IRGMC50UD
IRGMC50UU
MIL-S-19500
O-254
G-105
T3D 87
t3d 99
G-100
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IRGMVC50UD
Abstract: No abstract text available
Text: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes
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IRGMVC50U
20kHz
IRGMVC50UD
IRGMVC50UU
O-258
4ASS452
MIL-S-19500
IRGMVC50UD
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IRG4PC40K
Abstract: irg4pc40kd
Text: PD -9.1584 International l R Rectifier IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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O-247AC
IRG4PC40KD
IRG4PC40K
irg4pc40kd
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