LM3661TL-1.40
Abstract: motorola MJ480 PN3054 2SC756 PN30 acrian inc MJE2482 MJE2480 MJE5190J MJ480
Text: POWER SILICON NPN Item Number Part Number I C . 5 10 20 25 30 044C3 80461 044C2 40621 80435 80735 80735 2N6205 2N6205 2N6205 S30•28 40310 40324 80463 SK3041 SK3041 S15·12 AP15·12 ~f~j:A 35 40 80X24 40316 1571·0420 80163 MJE2480 MJE2482 40250Vl 40250Vl
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Crims60
127var
220A8
66var
220AB
T0-220A8
LM3661TL-1.40
motorola MJ480
PN3054
2SC756
PN30
acrian inc
MJE2482
MJE2480
MJE5190J
MJ480
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tip320
Abstract: MJ032C 9t18 80586 MJ032 4050gg diode hitachi MJE-371 BOT32 MJE371
Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 80582 80940 80940 80940 80940F 80940F 2N6419 2N6419 ~~~~~7 25 30 2S81215 80T30DF 80T320F TIP320 80942 80942 80942 80942F ~~~~~~5 35 40 80X16 80X16 TIP32E TIP32E TIP32E TIP32F TIP32F TIP32F +~~~~;~g
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O-126var
O-126
O-220
O-127var
127var
12Gvar
220A8
tip320
MJ032C
9t18
80586
MJ032
4050gg
diode hitachi
MJE-371
BOT32
MJE371
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Q400414
Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•
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-T-25-0Ã
MAC974
MAC976
MAC97AÂ
MAC97A6
MAC97A8
SC92B
T0218AC
BTB41200B
Q400414
06040J7
TO810MH
q2006l5 triac
Q2008F51
Triac SC141D
L201E5
SC136B
L4004F91
T6401M
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D84CN2
Abstract: IRF620 RF620
Text: PUF IRF620.621 D84CN2.M2 5 AMPERES 200,150 VOLTS Rd s (ON = 0.8 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRF620
D84CN2
00A/jUsec,
300/js,
250MA,
RF620
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Untitled
Abstract: No abstract text available
Text: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic
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Afl72fln
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T1C263M
Abstract: q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006
Text: PART No. ITrms Amps PACKAGE VDRM IDRM Volts mAmps Q1 TRIAC IGT Q2 Q3 mAmps Q4 VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 200 400 600 200 400 600 .010 .010 .010 .010 .010 .010 10 10 10 5
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MAC974
MAC976
MAC978
MAC97A4
MAC97A6
MAC97A8
SC92B
SC92C
SC92D
SC92M
T1C263M
q4015 triac
T1C226D
Q200BL5
Q2006L5
Q5025Z6
SC160D
q201015
Q4015A
Q4006
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2N4301
Abstract: No abstract text available
Text: 3 8 ^ 0 ¡ jn G E S O L ID STATERÒ ! DE J 3 f l ? S 0 f l l 001^404 S TIP 32 Series PNP POWER TRANSISTORS -4 0 -1 0 0 VOLTS -3 AMP, 40 WATTS COMPLEMENTARY TO THE TIP31 SERIES The TIP32 Series power transistors are designed for use in general purpose amplifier and switching applications.
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TIP31
TIP32
O-220AB
2N4301
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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BT808
Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
Text: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•
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-T-25-0Ã
MAC974
MAC976
MAC97AÂ
MAC97A6
MAC97A8
SC92B
T0218AC
BTB41200B
BT808
Q2006L5
Triac SC141D
TFK 609
TO810MH
triac tic236m
Q2006R5
Q4025V5
Q6040
T0505NH
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T0-220AB
Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
T0-220AB
PHILIPS MOSFET igbt
mosfet switch
BUK866 4001z
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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IRG4BC20KD
Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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IRG4BC20KD
T0220A8
IRG4BC20KD
IGBT IRG4BC20KD
IRGBC20KD2
transistor iqr
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IRF1010
Abstract: IRFBC40LC 3S4M
Text: International i»R Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced C ss. Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated V d ss
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IRFBC40LC
O-22D-AS
O-22QAB
IRF1010
D-S380
963064i
IRFBC40LC
3S4M
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TIC2360
Abstract: 8ta12 SC160D TLC226B TO505mh Q2006L5 SC160M 04004f41 C245B Q6040
Text: LO R A S I N D U S T R I E S INC M2E D • 5SflQ44ö G D G G O D b T ■ LORA “T -2 5 'O Í TRIAC o Q1 Ol VDRM IDRM Volts mAmps col PACKAGE OJ O ITrms Amps PART No. mAmps VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976
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5SflQ44Ã
MAC974
MAC976
MAC978
MAC97A6
MAC97A8
SC92B
O-218AC
BTB41200A
T0218AC
TIC2360
8ta12
SC160D
TLC226B
TO505mh
Q2006L5
SC160M
04004f41
C245B
Q6040
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103YY
Abstract: 2025h EC-103Y S6015L S1012L TIC106M SCR CR3103 CR3106 S6025 0306l
Text: SCR PART No. ITrms Amps PACKAGE ITavq Amps VDRM Volts IGT MAX mAmps IDRM mAmps IGT MIN mAmps Ih mAmps VTM ITM Volts Amps 5 5 5 5 5 5 : ;:5 5 5 5 5 5 5 5 5 8 5 5 5 8 5 5 5 8 5 5 5 8 5 5: 5 B 5 5 5 8 5 5 5 : 8 5 50 1.70 1.70 1.70 1.70 1;7Q 1.70 1.70 1.70 1.50
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2N5060
2N5061
2N5062
2N5063
2N5064
2N6564
2N656S
C203B
EC103A1
103YY
2025h
EC-103Y
S6015L
S1012L
TIC106M SCR
CR3103
CR3106
S6025
0306l
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
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Motorola transistors MRF 947
Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,
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