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    TRANSISTOR PACKING CODE 3F Search Results

    TRANSISTOR PACKING CODE 3F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PACKING CODE 3F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp transistor A1 sot-23

    Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking
    Text: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 OT-23 BC856 BC857/860 BC858/859 pnp transistor A1 sot-23 FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking

    transistor marking code SOT-23

    Abstract: transistor packing code 3f TRANSISTOR 3F t SOT-23 marking 050 transistor transistor sot23 3F transistor MARKING CODE 16 transistor sot23 SOT-23 transistor code 3e transistor SOT23 br sot-23 MARKING 3l
    Text: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC856A/B, BC857A/B/C, BC858A/B/C 250mW, OT-23 MIL-STD-202, C/10s 008gram transistor marking code SOT-23 transistor packing code 3f TRANSISTOR 3F t SOT-23 marking 050 transistor transistor sot23 3F transistor MARKING CODE 16 transistor sot23 SOT-23 transistor code 3e transistor SOT23 br sot-23 MARKING 3l

    TRANSISTOR 3F t

    Abstract: BC857A SOT-23 transistor code 3e
    Text: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC856A/B, BC857A/B/C, BC858A/B/C 250mW, OT-23 MIL-STD-202, TRANSISTOR 3F t BC857A SOT-23 transistor code 3e

    BC857A

    Abstract: 3k SOT-23 c10 g sot-23 transistor marking code SOT-23 BC856B transistor marking 3k BC856A BC857B BC857C BC858B RF
    Text: BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC856A/B, BC857A/B/C, BC858A/B/C 200mW, OT-23 MIL-STD-202, BC857A 3k SOT-23 c10 g sot-23 transistor marking code SOT-23 BC856B transistor marking 3k BC856A BC857B BC857C BC858B RF

    MARKING 3FS

    Abstract: No abstract text available
    Text: BC857BT PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Complementary type: BC847BT 2 1 Type Marking BC857BT 3Fs Pin Configuration 1=B 2=E VPS05996 Package 3=C


    Original     		PDF BC857BT BC847BT VPS05996 MARKING 3FS

    Untitled

    Abstract: No abstract text available
    Text: BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product SOT-23 Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC856A/B, BC857A/B/C, BC858A/B/C 200mW, OT-23 MIL-STD-202, C/10s BC856A BC856B BC857A

    Untitled

    Abstract: No abstract text available
    Text: 3-Pin Super Mini Package Embossed TE85L Tape for the S-Mini Package Tape Dimensions Unit: mm 2.0 ±0.05 φ1.5 ±0.1 0.25 4.0 ±0.1 Y 1.75 Y X 3.3 8.0 3.5 ±0.05 φ1.1 X’ Y’ Y’ 1.35 Feed direction 3.25 X X’ Cross section X-X’ Reel Dimensions Cross section Y-Y’


    Original     		PDF TE85L 236MOD TE85L

    transistor 600v

    Abstract: 4n60f 4n60e 04n60 4N60 4N60 application note mosfet 4n60 4N60-E PT10M H04N60
    Text: Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date :2010.10.14 Page No. : 1/6 HI-SINCERITY MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A


    Original     		PDF MOS200404 H04N60 O-263 O-220AB H04N60U, H04N60E, H04N60F transistor 600v 4n60f 4n60e 04n60 4N60 4N60 application note mosfet 4n60 4N60-E PT10M

    D9D TRANSISTOR

    Abstract: SOT-23 marking D9D transistor d9d HMBT8050 D9D SOT npn D9D D9D sot23 marking D9D D9E sot23 HMBT8550
    Text: Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date :2010.10.19 Page No. : 1/4 HI-SINCERITY MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA


    Original     		PDF HE6812 HMBT8050 HMBT8050 OT-23 150mA HMBT8550 183oC 217oC 260oC D9D TRANSISTOR SOT-23 marking D9D transistor d9d D9D SOT npn D9D D9D sot23 marking D9D D9E sot23 HMBT8550

    200v 3A schottky

    Abstract: bc557 package sot23
    Text: BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC858A/B/CLT1 WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF BC856A/BLTFM120-M BC857A/B/CLT1 FM1200-M BC858A/B/C OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH 200v 3A schottky bc557 package sot23

    1 R 4254

    Abstract: BFR182 BCW66 infineon marking code L2
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR182 1 R 4254 BFR182 BCW66 infineon marking code L2

    BFR181

    Abstract: 87757 BCW66
    Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR181 BFR181 87757 BCW66

    BFP181

    Abstract: BFP182
    Text: BFP182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP182 OT143 BFP181 BFP182

    Untitled

    Abstract: No abstract text available
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR182

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks

    MARKING 3FS

    Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 MARKING 3FS marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A

    TRANSISTOR MARKING NK

    Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94

    top marking 1B sot23

    Abstract: BC857 3fs TSLP3 1B marking transistor
    Text: BC857.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847.-BC850. NPN • Pb-free (RoHS compliant) package


    Original     		PDF BC857. -BC860. BC847. -BC850. Q1011) 1BC857BL3 BC857A BC857B BC857BL3* BC857BW top marking 1B sot23 BC857 3fs TSLP3 1B marking transistor

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860

    top marking 1B sot23

    Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A top marking 1B sot23 marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23

    Untitled

    Abstract: No abstract text available
    Text: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP183W OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TL E 4270 5-V L ow -D rop Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms


    OCR Scan     		PDF Q67000-A9209-A903 P-T0220-5-11 Q67000-A9243-A904 P-T0220-5-12 Q67006-A9201-A901 P-T0263-5-1 Q67000-A9209-A801 P-T0220-5-1 Q67000-A9243-A802 P-T0220-5-2

    Untitled

    Abstract: No abstract text available
    Text: n r a LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR o RN5RF SERIES OUTLINE The RN5RF Series are voltage regulator ICs which control external driver transistors with high ripple rejection, high accu­ racy output voltage, low supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer­


    OCR Scan     		PDF 800mA. 7744b10