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    BFR182 Price and Stock

    Infineon Technologies AG BFR-182-B6663

    RF TRANS NPN 12V 8GHZ SOT23-3
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    DigiKey BFR-182-B6663 Reel 30,000
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    Infineon Technologies AG BFR-182T-E6327

    RF TRANS NPN 12V 8GHZ SC75
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFR-182T-E6327 Reel 6,000
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    Infineon Technologies AG BFR-182W-E6327

    RF TRANS NPN 12V 8GHZ SOT323-3
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    DigiKey BFR-182W-E6327 Digi-Reel 1
    • 1 $0.36
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    BFR-182W-E6327 Reel 9,000
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    BFR-182W-E6327 Cut Tape 1
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    Infineon Technologies AG BFR182E6327HTSA1

    Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-23 - Tape and Reel (Alt: BFR182E6327HTSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BFR182E6327HTSA1 Reel 4 Weeks 3,864
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    Mouser Electronics BFR182E6327HTSA1 11,415
    • 1 $0.32
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    • 100 $0.157
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    Newark BFR182E6327HTSA1 Cut Tape 4,425 5
    • 1 $0.374
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    BFR182E6327HTSA1 Reel 3,000
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    Bristol Electronics BFR182E6327HTSA1 3,000
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    Rochester Electronics BFR182E6327HTSA1 50,000 1
    • 1 $0.0944
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    Chip1Stop BFR182E6327HTSA1 19,861
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    BFR182E6327HTSA1 Cut Tape 8,840
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    BFR182E6327HTSA1 8,518
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    • 1000 $0.1935
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    EBV Elektronik BFR182E6327HTSA1 3,000 5 Weeks 3,000
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    New Advantage Corporation BFR182E6327HTSA1 3,000 1
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    Infineon Technologies AG BFR182E6327XT

    Trans GP BJT NPN 12V 0.035A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR182E6327HTSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BFR182E6327XT Reel 4 Weeks 9,000
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    Chip1Stop BFR182E6327XT 6,000
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    Find more BFR182 price and stock on Findchips.com

    BFR182 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR182 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR182 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR182 Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) Original PDF
    BFR182 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR 182 B6663 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SOT-23 Original PDF
    BFR182B6663 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-23 Original PDF
    BFR182B6663 Infineon Technologies TRANS GP BJT NPN 12V 0.035A 3 pin SOT-23 T/R Original PDF
    BFR182E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-23 Original PDF
    BFR182E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-23 Original PDF
    BFR182E6663 Infineon Technologies TRANS GP BJT NPN 12V 0.035A 3 pin SOT-23 T/R Original PDF
    BFR182GEG Infineon Technologies TRANS GP BJT NPN 12V 0.035A 3 pin SOT-23 Original PDF
    BFR182T Infineon Technologies NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package Original PDF
    BFR182T Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR 182T E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR182TE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR182TE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.035A 3SC-75 T/R Original PDF
    BFR182TF Vishay Siliconix Silicon NPN Planar RF Transistor Original PDF
    BFR182TF Vishay Siliconix Transistors, RF & AF Original PDF
    BFR182T-GS08 Vishay TRANS GP BJT NPN 10V 0.035A Original PDF
    BFR182TW Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF

    BFR182 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


    Original     		PDF BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99

    1 R 4254

    Abstract: BFR182 BCW66 infineon marking code L2
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR182 1 R 4254 BFR182 BCW66 infineon marking code L2

    BFR182T

    Abstract: SC75
    Text: BFR182T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR182T VPS05996 900MHz Aug-09-2001 BFR182T SC75

    Untitled

    Abstract: No abstract text available
    Text: BFR182T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR182T VPS05996

    BFR182T

    Abstract: BFR182TW
    Text: BFR182T/BFR182TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


    Original     		PDF BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99

    BFR182T

    Abstract: BFR182TW
    Text: BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


    Original     		PDF BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99

    BFR182TF

    Abstract: No abstract text available
    Text: BFR182TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR182TF OT490 OT490 D-74025 23-Sep-02 BFR182TF

    Untitled

    Abstract: No abstract text available
    Text: BFR182 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFR182 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFR182TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR182TF OT-490 D-74025 28-Apr-05

    BCW66

    Abstract: BFR182
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR182 BCW66 BFR182

    Untitled

    Abstract: No abstract text available
    Text: BFR182W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR182W VSO05561 OT323

    Untitled

    Abstract: No abstract text available
    Text: BFR182W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR182W VSO05561 OT323

    BFR182T

    Abstract: No abstract text available
    Text: BFR182T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR182T D-74025 17-Apr-96 BFR182T

    BFR182

    Abstract: No abstract text available
    Text: BFR182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR182 VPS05161 900MHz Aug-09-2001 BFR182

    BFR182TW

    Abstract: International Microelectronic Products
    Text: BFR182TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR182TW D-74025 11-Oct-96 BFR182TW International Microelectronic Products

    BFR182T

    Abstract: Telefunken
    Text: BFR182T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR182T D-74025 17-Apr-96 BFR182T Telefunken

    Untitled

    Abstract: No abstract text available
    Text: BFR182T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR182T VPS05996

    SOT-490

    Abstract: BFR182TF
    Text: BFR182TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR182TF OT-490 OT-490 D-74025 24-Aug-04 SOT-490 BFR182TF

    BFR182T

    Abstract: BFR182TW
    Text: BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


    Original     		PDF BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BFR182TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR182TF OT-490 08-Apr-05

    BFR182W

    Abstract: BCR108W
    Text: BFR182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR182W OT323 BFR182W BCR108W

    Untitled

    Abstract: No abstract text available
    Text: BFR182T / BFR182TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High power gain Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. 3 2 1 Mechanical Data


    Original     		PDF BFR182T BFR182TW OT-23 BFR182TW OT-323 D-74025 24-Aug-04

    Untitled

    Abstract: No abstract text available
    Text: Temic BFR182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. *" Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    OCR Scan     		PDF BFR182T 17-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: _ BFR182T/BFR182TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 1 mA to 20 mA.


    OCR Scan     		PDF BFR182T/BFR182TW 182TW D-74025 20-Jan-99