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    Infineon Technologies AG BFR181WH6327XTSA1

    RF TRANS NPN 12V 8GHZ SOT323-3
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    DigiKey BFR181WH6327XTSA1 Reel 24,000 3,000
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    BFR181WH6327XTSA1 Cut Tape 4,877 1
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    TME BFR181WH6327XTSA1 3,545 1
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    Infineon Technologies AG BFR181E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT23-3
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    DigiKey BFR181E6327HTSA1 Cut Tape 2,660 1
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    Mouser Electronics BFR181E6327HTSA1 17,752
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    Verical BFR181E6327HTSA1 66,000 6,000
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    BFR181E6327HTSA1 6,000 307
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    Infineon Technologies AG BFR 181 E6780

    RF TRANS NPN 12V 8GHZ SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFR 181 E6780 Reel 6,000
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    Infineon Technologies AG BFR 181T E6327

    RF TRANS NPN 12V 8GHZ SC75
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    DigiKey BFR 181T E6327 Reel 6,000
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    Infineon Technologies AG BFR 181W E6327

    RF TRANS NPN 12V 8GHZ SOT323-3
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    DigiKey BFR 181W E6327 Cut Tape 1
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    BFR 181W E6327 Reel 9,000
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    Find more BFR181 price and stock on Findchips.com

    BFR181 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFR181 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR181 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR181 Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) Original PDF
    BFR181 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR18-10P-1 ITT Cannon Connectors, Interconnects - Circular Connectors - Connector Receptacle Male 4POS SOLDER CUP Original PDF
    BFR1811P1 ITT Industries Circular Connectors, Connectors, Interconnects, CONN RCPT 5POS W/PINS BULKHEAD Original PDF
    BFR18-19S ITT Cannon Connectors, Interconnects - Circular Connectors - Connector Receptacle Female 10POS SOLDER CUP Original PDF
    BFR181E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-23 Original PDF
    BFR181E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-23 Original PDF
    BFR 181 E6780 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SOT-23 Original PDF
    BFR181E6780 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-23 Original PDF
    BFR181E6780 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 3 pin SOT-23 T/R Original PDF
    BFR181P1 ITT Industries Circular Connectors, Connectors, Interconnects, CONN RCPT 10POS W/PINS BULKHEAD Original PDF
    BFR18-1P-1F80 ITT Industries Circular Connectors, Connectors, Interconnects, CONN RCPT 10POS W/PINS BULKHEAD Original PDF
    BFR181S1 ITT Industries Circular Connectors, Connectors, Interconnects, CONN RCPT 10POS W/SCKTS BULKHEAD Original PDF
    BFR181T Infineon Technologies NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package Original PDF
    BFR181T Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR 181T E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR181TE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR181TE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 3SC-75 T/R Original PDF

    BFR181 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCR108T

    Abstract: BFR181T SC75
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T BCR108T BFR181T SC75

    87757

    Abstract: BFR181 BCW66
    Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181 87757 BFR181 BCW66

    BFR181T

    Abstract: SC75
    Text: BFR181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T VPS05996 900MHz Aug-09-2001 BFR181T SC75

    Untitled

    Abstract: No abstract text available
    Text: BFR181T / BFR181TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High power gain Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. 3 2 1 Mechanical Data


    Original     		PDF BFR181T BFR181TW OT-23 BFR181TW OT-323 D-74025 30-Aug-04

    Untitled

    Abstract: No abstract text available
    Text: BFR181W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free RoHS compliant and halogen free industry standard package with visible leads


    Original     		PDF BFR181W AEC-Q101 OT323

    AN077

    Abstract: BCR108W BFR181W
    Text: BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR181W OT323 AN077 BCR108W BFR181W

    Untitled

    Abstract: No abstract text available
    Text: BFR181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFR181 AEC-Q101

    BFR181T

    Abstract: BFR181TW
    Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure


    Original     		PDF BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99

    BFR181TF

    Abstract: No abstract text available
    Text: BFR181TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR181TF OT-490 OT-490 08-Apr-05 BFR181TF

    BFR181T

    Abstract: Telefunken
    Text: BFR181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR181T D-74025 17-Apr-96 BFR181T Telefunken

    BFR181TW

    Abstract: Telefunken
    Text: BFR181TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR181TW D-74025 11-Oct-96 BFR181TW Telefunken

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T VPS05996

    Untitled

    Abstract: No abstract text available
    Text: BFR181W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR181W VSO05561 OT323

    Untitled

    Abstract: No abstract text available
    Text: BFR181 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR181 VPS05161

    SOT23 NE

    Abstract: BCW66 BFR181W BFR181W foot print
    Text: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR181W OT323 SOT23 NE BCW66 BFR181W BFR181W foot print

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T VPS05996

    BFR181W

    Abstract: VSO05561 10V125V
    Text: BFR181W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR181W VSO05561 OT323 900MHz Jun-27-2001 BFR181W VSO05561 10V125V

    Untitled

    Abstract: No abstract text available
    Text: BFR181W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free RoHS compliant and halogen free industry standard package with visible leads


    Original     		PDF BFR181W AEC-Q101 OT323

    BFR181T

    Abstract: BFR181TW
    Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure


    Original     		PDF BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99

    telefunken

    Abstract: BFR181T
    Text: BFR181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR181T D-74025 17-Apr-96 telefunken BFR181T

    BFR181TF

    Abstract: No abstract text available
    Text: BFR181TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR181TF OT-490 OT-490 D-74025 30-Aug-04 BFR181TF

    NPN planar RF transistor

    Abstract: No abstract text available
    Text: Tem ic BFR181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    OCR Scan     		PDF BFR181T 17-Apr-96 NPN planar RF transistor

    Untitled

    Abstract: No abstract text available
    Text: _ BFR181T/BFR181TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 0.5 m A to 12 mA.


    OCR Scan     		PDF BFR181T/BFR181TW 181TW D-74025 20-Jan-99