BFR949T Search Results

BFR949T Price and Stock

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Infineon Technologies AG BFR-949T-E6327 RF TRANS NPN 10V 9GHZ SC75
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR-949T-E6327	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.08767	Buy Now
Infineon Technologies AG BFR949T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BFR949T		5,884			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BFR949TE6327
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BFR949TE6327		20,033			1 $0.676 10 $0.676 100 $0.676 1000 $0.676 10000 $0.1183	Buy Now

BFR949T Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BFR949T		Infineon Technologies	NPN Silicon RF Transistor		Original	PDF
BFR949T		Infineon Technologies	NPN Silicon RF transistor for low noise, high gain broadband amplifiers		Original	PDF
BFR 949T E6327		Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF BIP SC-75		Original	PDF
BFR949TE6327		Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF BIP SC-75		Original	PDF

BFR949T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFR949T Abstract: SC75 BFR94 Text: BFR949T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR949T VPS05996 Aug-09-2001 BFR949T SC75 BFR94
Untitled Abstract: No abstract text available Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking	Original	PDF	BFR949T
Untitled Abstract: No abstract text available Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFR949T VPS05996
BFR949T Abstract: MA457 MARKING C6 BFR94 Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking	Original	PDF	BFR949T BFR949T MA457 MARKING C6 BFR94
TRANSISTOR MARKING NK Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94 Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!	Original	PDF	BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94
BFR94 Abstract: No abstract text available Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFR949T VPS05996 BFR94
BFR949T Abstract: SC75 GMA marking Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFR949T VPS05996 Oct-24-2001 BFR949T SC75 GMA marking