TRANSISTOR PACKAGE 86 Search Results

TRANSISTOR PACKAGE 86 Result Highlights (5)

Part	Manufacturer	Description
XPH13016MC	Toshiba Electronic Devices & Storage Corporation	P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF)
XPH8R316MC	Toshiba Electronic Devices & Storage Corporation	P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF)
TPH3R10AQM	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)

TRANSISTOR PACKAGE 86 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
JAPAN transistor Abstract: TO263 transistor TS11B to263-7 TS5B TS15B TS7B to-263 Text: Transistor Outline TO-263 3 Lead Molded TO-263 NS Package Number TS3B 2000 National Semiconductor Corporation MS101190 www.national.com Transistor Outline (TO-263) May 1999 Transistor Outline (TO-263) 5 Lead Molded TO-263 NS Package Number TS5B www.national.com	Original	PDF	O-263) O-263 MS101190 JAPAN transistor TO263 transistor TS11B to263-7 TS5B TS15B TS7B to-263
NATIONAL SEMICONDUCTOR TO-92 Abstract: transistor a 92 JAPAN transistor Z03A Z03B Z03C Z03D Z03E Z03G Z03H Text: Transistor Outline TO-92 3 Lead Molded TO-92 NS Package Number Z03A 2000 National Semiconductor Corporation MS101171 www.national.com Transistor Outline (TO-92) May 1999 Transistor Outline (TO-92) 3 Lead Molded TO-92 NS Package Number Z03B www.national.com	Original	PDF	MS101171 NATIONAL SEMICONDUCTOR TO-92 transistor a 92 JAPAN transistor Z03A Z03B Z03C Z03D Z03E Z03G Z03H
TO-202 transistor Abstract: JAPAN transistor TO-202 transistor TRANSISTOR Outlines P03H P03B P03C P03C diode P03j Text: Transistor Outline TO-202 3 Lead Molded TO-202 NS Package Number P03A 2000 National Semiconductor Corporation MS101172 www.national.com Transistor Outline (TO-202) May 1999 Transistor Outline (TO-202) 3 Lead Molded TO-202 NS Package Number P03B 3 Lead Molded TO-202	Original	PDF	O-202) O-202 MS101172 TO-202 transistor JAPAN transistor TO-202 transistor TRANSISTOR Outlines P03H P03B P03C P03C diode P03j
"dual TRANSISTORs" pnp npn Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034 Text: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,	Original	PDF	ZXTDE4M832 "dual TRANSISTORs" pnp npn dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
nec 16312 Abstract: 2SC5800 NE851M03 NE851M03-T3 S21E nec 9701 Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS	Original	PDF	NE851M03 NE851M03 nec 16312 2SC5800 NE851M03-T3 S21E nec 9701
transistor TO220 Abstract: TO-220 transistor package T03A TA15A T02D TA15D TA03F T-03-A T03B T03D Text: Transistor Outline TO-220 2 Lead Molded TO-220 NS Package Number T02D 1999 National Semiconductor Corporation MS101173 www.national.com Transistor Outline (TO-220) May 1999 2 Lead Molded TO-220 NS Package Number TA02A 3 Lead Molded TO-220 NS Package Number T03A	Original	PDF	O-220) O-220 MS101173 TA02A transistor TO220 TO-220 transistor package T03A TA15A T02D TA15D TA03F T-03-A T03B T03D
nec 16312 transistor Abstract: cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor NE851M03 16312 transistor SiS 671 transistor KF 507 Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS	Original	PDF	NE851M03 NE851M03 2e-15 AN1026. nec 16312 transistor cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor 16312 transistor SiS 671 transistor KF 507
TO-226 Abstract: Transistor to 226 TO226 diode 226 TRANSISTOR Outlines transistor outline package 3 RC03A RC03B RC03C RC03D Text: Transistor Outline TO-226 3 Lead Molded TO-226 NS Package Number RC03A 1999 National Semiconductor Corporation MS101174 www.national.com Transistor Outline (TO-226) May 1999 3 Lead Molded TO-226 NS Package Number RC03B 3 Lead Molded TO-226 NS Package Number RC03C	Original	PDF	O-226) O-226 RC03A MS101174 RC03B RC03C TO-226 Transistor to 226 TO226 diode 226 TRANSISTOR Outlines transistor outline package 3 RC03A RC03B RC03C RC03D
transistor 237 Abstract: TO-237 TRANSISTOR Outlines R03A R03B R03C R03D Text: Transistor Outline TO-237 3 Lead Molded TO-237 NS Package Number R03A 1999 National Semiconductor Corporation MS101175 www.national.com Transistor Outline (TO-237) May 1999 3 Lead Molded TO-237 NS Package Number R03B 3 Lead Molded TO-237 NS Package Number R03C	Original	PDF	O-237) O-237 MS101175 transistor 237 TO-237 TRANSISTOR Outlines R03A R03B R03C R03D
BSP16T1 Abstract: SMD310 Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300	Original	PDF	BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310
transistor k 4110 Abstract: mje 3007 UPA800T 3019 Transistor BJT 5240 Text: SILICON TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz	Original	PDF	NE680 UPA800T UPA800T 24-Hour transistor k 4110 mje 3007 3019 Transistor BJT 5240
nec 16312 transistor Abstract: Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507 Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low proﬁle / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR ≤ 3 GHz OSCILLATORS	Original	PDF	NE851M03 NE851M03 nec 16312 transistor Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507
ic 7738 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance	Original	PDF	NE851M13 NE851M13 ic 7738
ic 7738 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance	Original	PDF	NE851M13 NE851M13 15e-12 170e-15 ic 7738

4066 spice model Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900 Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ	Original	PDF	MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
318M Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ	Original	PDF	MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 318M LL1608-FH MBC13900T1 marking r4 SOT343 SOT343 lna
transistor pt 6007 Abstract: NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478 Text: SILICON TRANSISTOR UPA807T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz	Original	PDF	UPA807T NE686 UPA807T 24-Hour transistor pt 6007 NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478
NEC 7924 Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538 Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1	Original	PDF	2SC5013 2SC5013-T1 2SC5013-T2 NEC 7924 ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
4066 spice model Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice Text: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor	Original	PDF	MBC13900/D MBC13900 MBC13900T1 OT-343) OT-343 MBC13900 SC-70 318M-01, 4066 spice model marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
nec 2532 Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain	Original	PDF	2SC5014 2SC5014) 2SC5014-T2 nec 2532 NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
transistor c 6073 Abstract: 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026 NE894M03 Text: NEC's NPN SILICON TRANSISTOR NE894M03 FEATURES • OUTLINE DIMENSIONS Units in mm MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR > 3 GHz OSCILLATORS	Original	PDF	NE894M03 NE894M03 AN1026. 83e-15 transistor c 6073 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026
NEC K 2500 Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150 Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise	OCR Scan	PDF	2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
2SC2150 Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise	OCR Scan	PDF	2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X
basel 332 k Abstract: ZO 607 MA IC 1709 CN transistor zo 607 18896 IC 566 vco zo 607 2SC5245 2SC5415 MCP 901 Text: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Features Package Dimensions •Composite type with a buffer transistor 2SC5245 and a oscillator transistors (2SC5415) contained in the currently provided M C P package as a VCO	OCR Scan	PDF	ENN6179 FH203 2SC5245) 2SC5415) FH203 2SC5245 2SC5415, FH203] IS12I T707b basel 332 k ZO 607 MA IC 1709 CN transistor zo 607 18896 IC 566 vco zo 607 2SC5415 MCP 901

TRANSISTOR PACKAGE 86 Search Results

TRANSISTOR PACKAGE 86 Result Highlights (5)

TRANSISTOR PACKAGE 86 Datasheets Context Search

JAPAN transistor

NATIONAL SEMICONDUCTOR TO-92

TO-202 transistor

"dual TRANSISTORs" pnp npn

nec 16312

transistor TO220

nec 16312 transistor

TO-226

transistor 237

BSP16T1

transistor k 4110

nec 16312 transistor

ic 7738

ic 7738

4066 spice model

318M

transistor pt 6007

NEC 7924

4066 spice model

nec 2532

transistor c 6073

NEC K 2500

2SC2150

basel 332 k