smd transistor 83
Abstract: No abstract text available
Text: Transistors SMD Type P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 0.1max +0.05 0.90-0.05 +0.2 -0.2 Direct interface to C-MOS,TTL,etc High-speed switching +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2
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KSP230
OT-223
smd transistor 83
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720 TRANSISTOR smd sot-223
Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
Text: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2
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KSP92
OT-223
720 TRANSISTOR smd sot-223
KSP92
KSP92 equivalent
720 TRANSISTOR smd sot
40X40
transistor 720 smd
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Untitled
Abstract: No abstract text available
Text: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2
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OT-23
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2SJ439
Abstract: J439
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 : |Yfs| = 6.0 S (typ.) : IDSS = −100 A (max) (VDS = −16 V)
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2SJ439
2SJ439
J439
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2SJ338
Abstract: 2SK2162 J338
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. 0.6 MAX. 5.5 ± 0.2 5.2 ± 0.2 1.7 ± 0.2
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2SJ338
2SK2162
2SJ338
2SK2162
J338
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2SJ338
Abstract: 2SK2162 J338
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 0.7 S typ. 5.5 ± 0.2 : VDSS = −180 V 1.2 MAX. z High breakdown voltage
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2SJ338
2SK2162
2SJ338
2SK2162
J338
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Untitled
Abstract: No abstract text available
Text: IC MOS FET SMD Type SIPMOS Small-Signal-Transistor BSP613P SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features P-Channel +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Enhancement mode 4 Avalanche rated dv/dt rated Ideal for fast switching buck converter
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BSP613P
OT-223
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j668
Abstract: 2SJ668
Text: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 z 4 V gate drive 0.6 MAX. 5.5 ± 0.2 1.2 MAX. z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
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2SJ668
j668
2SJ668
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SMD 8A TRANSISTOR
Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
Text: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).
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KDB4020P
FDB4020P)
O-263
SMD 8A TRANSISTOR
transistor SMD 8A
smd transistor 8A
FDB4020P
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CHM3U22VESGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts CHM3U22VESGP CURRENT 0.2 Ampere CURRENT 0.2 Ampere APPLICATION * High speed switching , Analog switching SOT-563
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CHM3U22VESGP
OT-563
CHM3U22VESGP
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Untitled
Abstract: No abstract text available
Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ567 Switching Applications Unit: mm 1.5 ± 0.2 (typ.) 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 5.2 ± 0.2 1.2 MAX. • 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 2.0 S (typ.)
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2SJ567
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CHM3U33SESGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM3U33SESGP CURRENT 0.2 Ampere CURRENT 0.2 Ampere APPLICATION * High speed switching , Analog switching SC-88/SOT-363
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CHM3U33SESGP
SC-88/SOT-363
CHM3U33SESGP
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j668
Abstract: 2SJ668
Text: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4 V gate drive 5.5 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
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2SJ668
j668
2SJ668
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Diode T148
Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Text: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2
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SC-74A)
DTA144EKA)
SC-59)
47kfl
-100nA
-10mA/-5mA
100ns
Diode T148
transistor 667
transistor D 667
DTA144EKA
T148
marking J1
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NEC 2581
Abstract: nec 2405 2405 nec 09640
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance PACKAGE DIMENSIONS in millimeters 2 . 8 ± 0.2 Cre = 0 .3 p F T Y P .
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2SC4954
2SC4954-T1
NEC 2581
nec 2405
2405 nec
09640
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J681
Abstract: transistor J681 j681 transistor 2SJ681
Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
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2SJ681
J681
transistor J681
j681 transistor
2SJ681
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transistor J681
Abstract: 2sj681 J681 j681 transistor
Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
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2SJ681
transistor J681
2sj681
J681
j681 transistor
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LTF5022
Abstract: AEN 6 CDRH4D28C MSOP-10 USP-10B XC9128 XC9129
Text: XC9128/XC9129 Series ETR0411-004 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to
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XC9128/XC9129
ETR0411-004
LTF5022
AEN 6
CDRH4D28C
MSOP-10
USP-10B
XC9128
XC9129
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XC9128B45
Abstract: No abstract text available
Text: XC9128/XC9129 Series ETR0411-005 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to
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XC9128/XC9129
ETR0411-005
XC9128B45
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Untitled
Abstract: No abstract text available
Text: XC9128/XC9129 Series ETR0411-003 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to
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XC9128/XC9129
ETR0411-003
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2SK2543
Abstract: No abstract text available
Text: TOSHIBA 2SK2543 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2543 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.3 03.2 ± 0.2 . 2.7± 0.2
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2SK2543
2SK2543
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2
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2SJ324
324-Z
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ327,327-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ327 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2
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2SJ327
327-Z
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326-Z
Abstract: MARK 326
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ326,326-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ326 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2
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2SJ326
326-Z
326-Z
MARK 326
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