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    TRANSISTOR P 0.2 V Search Results

    TRANSISTOR P 0.2 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P 0.2 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor 83

    Abstract: No abstract text available
    Text: Transistors SMD Type P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 0.1max +0.05 0.90-0.05 +0.2 -0.2 Direct interface to C-MOS,TTL,etc High-speed switching +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2


    Original     		PDF KSP230 OT-223 smd transistor 83

    720 TRANSISTOR smd sot-223

    Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
    Text: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2


    Original     		PDF KSP92 OT-223 720 TRANSISTOR smd sot-223 KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2


    Original     		PDF OT-23

    2SJ338

    Abstract: 2SK2162 J338
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 0.7 S typ. 5.5 ± 0.2 : VDSS = −180 V 1.2 MAX. z High breakdown voltage


    Original     		PDF 2SJ338 2SK2162 2SJ338 2SK2162 J338

    Untitled

    Abstract: No abstract text available
    Text: IC MOS FET SMD Type SIPMOS Small-Signal-Transistor BSP613P SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features P-Channel +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Enhancement mode 4 Avalanche rated dv/dt rated Ideal for fast switching buck converter


    Original     		PDF BSP613P OT-223

    j668

    Abstract: 2SJ668
    Text: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 z 4 V gate drive 0.6 MAX. 5.5 ± 0.2 1.2 MAX. z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		PDF 2SJ668 j668 2SJ668

    SMD 8A TRANSISTOR

    Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
    Text: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).


    Original     		PDF KDB4020P FDB4020P) O-263 SMD 8A TRANSISTOR transistor SMD 8A smd transistor 8A FDB4020P

    Untitled

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ567 Switching Applications Unit: mm 1.5 ± 0.2 (typ.) 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 5.2 ± 0.2 1.2 MAX. • 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ567

    j668

    Abstract: 2SJ668
    Text: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4 V gate drive 5.5 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		PDF 2SJ668 j668 2SJ668

    J681

    Abstract: transistor J681 j681 transistor 2SJ681
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		PDF 2SJ681 J681 transistor J681 j681 transistor 2SJ681

    transistor J681

    Abstract: 2sj681 J681 j681 transistor
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		PDF 2SJ681 transistor J681 2sj681 J681 j681 transistor

    LTF5022

    Abstract: AEN 6 CDRH4D28C MSOP-10 USP-10B XC9128 XC9129
    Text: XC9128/XC9129 Series ETR0411-004 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to


    Original     		PDF XC9128/XC9129 ETR0411-004 LTF5022 AEN 6 CDRH4D28C MSOP-10 USP-10B XC9128 XC9129

    XC9128B45

    Abstract: No abstract text available
    Text: XC9128/XC9129 Series ETR0411-005 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to


    Original     		PDF XC9128/XC9129 ETR0411-005 XC9128B45

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2


    Original     		PDF 2SJ324 324-Z

    326-Z

    Abstract: MARK 326
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ326,326-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ326 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2


    Original     		PDF 2SJ326 326-Z 326-Z MARK 326

    2SJ377

    Abstract: J377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.16 Ω (typ.)


    Original     		PDF 2SJ377 2SJ377 J377

    Diode T148

    Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
    Text: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2


    OCR Scan     		PDF SC-74A) DTA144EKA) SC-59) 47kfl -100nA -10mA/-5mA 100ns Diode T148 transistor 667 transistor D 667 DTA144EKA T148 marking J1

    NEC 2581

    Abstract: nec 2405 2405 nec 09640
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance PACKAGE DIMENSIONS in millimeters 2 . 8 ± 0.2 Cre = 0 .3 p F T Y P .


    OCR Scan     		PDF 2SC4954 2SC4954-T1 NEC 2581 nec 2405 2405 nec 09640

    2SK2543

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2543 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2543 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.3 03.2 ± 0.2 . 2.7± 0.2


    OCR Scan     		PDF 2SK2543 2SK2543

    transistor 2sc1972

    Abstract: 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on VHF band mobile radio applications. Dimensions in mm 03.6 ± 0.2


    OCR Scan     		PDF 2SC1972 2SC1972 175MHz O-220 175MHz. transistor 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf

    Untitled

    Abstract: No abstract text available
    Text: NPN Photo Transistor TPS608A «> A p p lica tio n s • Photo Interrupter • Photoelectric Counter 1 -0 4 4 • Position and Rotational Speed Sensor - ¿ 0.2 5 + 0 3 2 .4 +. 0.3 - 0.2 r— • Automatic Control Unit " T Featu res - 1.5 • Fast Response Speed


    OCR Scan     		PDF TPS608A TLN107A TLN107A 98-4LEDS

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K # Features •E x te rn a l dim ensions (Units: mm) 1) Very low VcE(sat). VcE(sat) = —0.13V (Typ.) 2.9±0.2 = 500m A/50m A) 1 9 ± 0.2 (Ic / I b 2) < <+0.2 1 1- 0 1 0.8 + 0.1 High cu rre n t ca p a city in co m p a ct


    OCR Scan     		PDF 2SD1781K 2SB1147K. SC-59 2sb1147

    bt39

    Abstract: No abstract text available
    Text: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ M M BT3906LT1 TRANSISTOR PNP 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES Power dissipation PcM: 0.2 W (Tamb=25'C ) C ollector current ICM: -0.2 A 2.4 u_1.3 ;CoHector-base voltage ^ V(br>cbo :-40V


    OCR Scan     		PDF OT-23 BT3906LT1 MMBT3906LT1 MMBT3906LT1 bt39

    2iy transistor

    Abstract: 2SD1227M
    Text: h -? > v $ /Transistors 2SD1227M/2SD1862 2SD1227M 2SD1862 Xk°2*'>7^7°U-tfêNPN y bÿ>v*$ Epitaxil Planar NPN Silicon Transistor /Medium Power Amp. • £1-Jfi'+;£Eil/Dimensions Unit : mm 1) P c = l W i: ± # i'„ 2SD1227M 2SD1862 r 2.5 ± 0.2 6.8 i 0.2


    OCR Scan     		PDF 2SD1227M/2SD1862 2SD1227M 2SD1862 2SD1227M 2SB911M SC-71 2iy transistor