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    2SJ338 Search Results

    2SJ338 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ338 Toshiba TRANS MOSFET P-CH 180V 1A 3(2-7J1B) Original PDF
    2SJ338 Toshiba P-Channel MOSFET Original PDF
    2SJ338 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ338 Toshiba Original PDF
    2SJ338 Toshiba Silicon P channel field effect transistor for audio frequency power amplifier applications Scan PDF
    2SJ338O Toshiba TRANS MOSFET P-CH 180V 1A 3(2-7J1B) Original PDF
    2SJ338Y Toshiba TRANS MOSFET P-CH 180V 1A 3(2-7J1B) Original PDF

    2SJ338 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2162

    Abstract: 2SJ338 2SK2162
    Text: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。


    Original
    PDF 2SK2162 2SJ338 SC-64 K2162 2002/95/EC) K2162 2SJ338 2SK2162

    toshiba audio power amplifier

    Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 toshiba audio power amplifier Audio Power Amplifier TOSHIBA 2SJ338 2SK2162

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: Toshiba 2SJ toshiba marking code transistor
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm


    Original
    PDF 2SK2162 2SJ338 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ toshiba marking code transistor

    2SJ338

    Abstract: 2SK2162 K2162
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage


    Original
    PDF 2SK2162 2SJ338 2SJ338 2SK2162 K2162

    2SJ338

    Abstract: 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 2SJ338 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage


    Original
    PDF 2SK2162 2SJ338

    toshiba audio power amplifier

    Abstract: K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2162 Audio Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338


    Original
    PDF 2SK2162 2SJ338 SC-64 toshiba audio power amplifier K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ

    Toshiba 2SJ

    Abstract: toshiba marking code transistor 2-7J1B
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 Toshiba 2SJ toshiba marking code transistor 2-7J1B

    2SJ338

    Abstract: 2SK2162 J338
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. 0.6 MAX. 5.5 ± 0.2 5.2 ± 0.2 1.7 ± 0.2


    Original
    PDF 2SJ338 2SK2162 2SJ338 2SK2162 J338

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: 2SJ338 2SK2162 K2162 Toshiba 2SJ toshiba marking code transistor
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm


    Original
    PDF 2SK2162 2SJ338 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2SJ338 2SK2162 K2162 Toshiba 2SJ toshiba marking code transistor

    2SJ338

    Abstract: 2SK2162 Toshiba 2SJ
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 2SJ338 2SK2162 Toshiba 2SJ

    2SJ338

    Abstract: 2SK2162 J338
    Text: 2SJ338 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ338 単位: mm ○ 低周波電力増幅用 1.7 ± 0.2 6.8 MAX. z 高順方向伝達アドミタンスです。 : |Yfs| = 0.7S 標準 z 2SK2162 とコンプリメンタリになります。


    Original
    PDF 2SJ338 -180V 2SK2162 SC-64 2002/95/EC) 2SJ338 2SK2162 J338

    J338

    Abstract: Toshiba 2SJ
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 J338 Toshiba 2SJ

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: Toshiba 2SJ 2sk2162
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338


    Original
    PDF 2SK2162 2SJ338 SC-64 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ 2sk2162

    J338

    Abstract: 2SK2162 2SJ338 Toshiba 2SJ
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 J338 2SK2162 2SJ338 Toshiba 2SJ

    toshiba lot number type

    Abstract: 2SJ338 2SK2162 Toshiba 2SJ
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan
    PDF 2SJ338 2SK2162 SC-64 -10mA, -10mA toshiba lot number type Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ 338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V;ogg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan
    PDF 2SJ338 2SK2162

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : ^ D S S ~ —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan
    PDF 2SJ338 --180V 2SK2162 --10mA

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS High Breakdown Voltage : Vj gg= —180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)


    OCR Scan
    PDF 2SJ338 --180V 2SK2162 --10mA,

    Transistor ERA - 3

    Abstract: 2SJ338 2SK2162 Toshiba 2SJ
    Text: TO SH IBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AU D IO FREQUENCY POWER AMPLIFIER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm • High Breakdown Voltage : Vßgg = —180 V • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.


    OCR Scan
    PDF 2SJ338 2SK2162 -10mA, -10mA Transistor ERA - 3 2SJ338 2SK2162 Toshiba 2SJ

    toshiba Ta

    Abstract: 2SJ338 2SK2162
    Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338 INDUSTRIAL APPLICATIONS


    OCR Scan
    PDF 2SK2162 2SJ338 K2162 toshiba Ta 2SJ338 2SK2162

    toshiba lot number type

    Abstract: 2SJ338 2SK2162 Transistor ERA - 3 Toshiba 2SJ
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan
    PDF 2SJ338 2SK2162 -10mA, -10mA toshiba lot number type 2SJ338 2SK2162 Transistor ERA - 3 Toshiba 2SJ

    2SJ338

    Abstract: 2SK2162
    Text: TO SH IBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vßgg = 180 V • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338


    OCR Scan
    PDF 2SK2162 2SJ338 2SJ338 2SK2162

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan
    PDF 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915