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    Toshiba America Electronic Components 2SJ439(TE16L1,N0)

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    Quest Components 2SJ439(TE16L1,N0) 731
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    2SJ439 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ439 Toshiba Original PDF
    2SJ439 Toshiba P-Channel MOSFET Original PDF
    2SJ439 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ439 Toshiba TRANS MOSFET P-CH 16V 5A 3(2-7J1B) Original PDF
    2SJ439 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ439 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SJ439 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (pi-MOSV) Scan PDF

    2SJ439 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J439

    Abstract: 2SJ439 012C3 G1150 J4-39
    Text: 2SJ439 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ439 ○ リレー駆動DC−DC コンバータ用 単位: mm z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準) z 漏れ電流が低い。


    Original     		PDF 2SJ439 2002/95/EC) J439 2SJ439 012C3 G1150 J4-39

    2SJ439

    Abstract: No abstract text available
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5-V gate drive Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ439 2SJ439

    2SJ439

    Abstract: J439
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 MAX. : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ439 2SJ439 J439

    2SJ439

    Abstract: J439
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5-V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ439 2SJ439 J439

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    J439

    Abstract: 2SJ439
    Text: 2SJ439 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ439 ○ リレー駆動DC−DC コンバータ用 z 2.5V 駆動です。 z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		PDF 2SJ439 SC-64 2002/95/EC) J439 2SJ439

    2SJ439

    Abstract: No abstract text available
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ439 2SJ439

    Untitled

    Abstract: No abstract text available
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 2.5-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ439 SC-64

    2SJ439

    Abstract: J439
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 : |Yfs| = 6.0 S (typ.) : IDSS = −100 A (max) (VDS = −16 V)


    Original     		PDF 2SJ439 2SJ439 J439

    2SJ439

    Abstract: No abstract text available
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 2.5 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) l High forward transfer admittance


    Original     		PDF 2SJ439 2SJ439

    2SJ439

    Abstract: J439
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 2.5-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ439 2SJ439 J439

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		PDF BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    transistor 1211

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ439 --16V) transistor 1211

    marking DIODE 2U 04

    Abstract: 2SJ439
    Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) = 0.180 (Typ.)


    OCR Scan     		PDF 2SJ439 marking DIODE 2U 04 2SJ439

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) =0.18il (Typ.)


    OCR Scan     		PDF 2SJ439 --100/iA --16V)

    2SJ439

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) =0.180 (Typ.)


    OCR Scan     		PDF 2SJ439

    2SJ439

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.18 ü, (Typ.)


    OCR Scan     		PDF 2SJ439 2SJ439

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2 SJ4 3 9 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U STRIA L APPLICATIO NS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS j 2.5V Gate Drive


    OCR Scan     		PDF 2SJ439 20kf2)