81E TRANSISTOR
Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power
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b427414
0002SS2
NEM080481-12
NEM081081-12
NEM082081B-12
NEM084081B-12
NEM0800
NEM080481E-12
NEM081081E-12
81E TRANSISTOR
2SC3282
2SC3282A
NEC J 302
2SC3283A
2SC3283
J349
J475
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UPD434000
Abstract: CZ-70
Text: NEC JUPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description The ¿JPD434000 is a 524,288-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with thin-film transistor TFT loads make the
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uPD434000
JPD434000
288-word
/PD434000
The/jPD43
15/uA
JJPD434000
D434000
JUPD434000
CZ-70
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PA101B
Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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PA101
PA102
PA103
PA104
P10944EJ2V0AN00
PA101B
PA103
PA104
MICRO-X TRANSISTOR MARK Q6
4 npn transistor ic 14pin
upa101g
PA102B
UPA101
P10944EJ2V0AN00
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Untitled
Abstract: No abstract text available
Text: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic
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uPD4216405
64-ms
JPD4216405
26-Pin
iPD4216405G3-XX
G3-50-7KD
4216405G
3-70-7KD
//PD4216405LA-50
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Untitled
Abstract: No abstract text available
Text: {IPD4216805 2M x 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ¿¿PD4216805 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 2,097,152 words by 8 bits. A single-transistor dynamic
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uPD4216805
28-Pin
nPD4216805G5-XX
PD4216805
64-ms
6805G5-50-7JD
/PD4216805G5-60-7JD
//PD4216805G5-70
pPD4216805G5-50-7KD
iPD4216805G5-60-7KD
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)
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uPA102
PA102B:
PA102G:
14-pin
PA102
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Untitled
Abstract: No abstract text available
Text: pPD4216165 1M X 16-Bit Dynamic CM OS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ji/PD4216165 devices are dynam ic CM O S RAMs with an optional hyper-page mode organized as 1,048,576 words by 16 bits. A single-transistor dynam ic storage
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pPD4216165
16-Bit
ji/PD4216165
42-Pin
64-ms
/JPD4216165G5-70
//PD4216165G5-50-7KF
JUPD4216165G5-60
/iPD4216165G5-70
//PD4216165LE-50
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10.4-inch lcd Color active matrix tft lcd panel
Abstract: NL6448BC33-64 NL6448BC26-09 121PW181 NL6448BC33-63D NL8060BC31-42 Video Graphics Array "12.1 inch" lcd 104PW201 inch lcd
Text: NEC LCD Technologies to Enhance Core Product Lineup of TFT LCD Modules for Industrial Use DUESSELDORF Germany and TOKYO (Japan); April 12, 2006 – NEC LCD Technologies today announced that it will begin successive shipment of five new amorphous silicon thin-film-transistor (TFT) liquid crystal display (LCD) samples by the end of June, 2006.
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NL8060BC31-41D
84PW031
84PW041
10.4-inch lcd Color active matrix tft lcd panel
NL6448BC33-64
NL6448BC26-09
121PW181
NL6448BC33-63D
NL8060BC31-42
Video Graphics Array
"12.1 inch" lcd
104PW201
inch lcd
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Untitled
Abstract: No abstract text available
Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
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UPA102G
UPA102G
OUTUNEG14
UPA102G-E1
2500/REEL
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2SB804
Abstract: D100-5A
Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB804 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2SB804 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits. FE A TU R E S
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2SB804
2SB804
D100-5A
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4 npn transistor ic 14pin
Abstract: PA1032 8 npn transistor ic 14pin
Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers
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iPA103B:
iPA103G:
14-pin
fPA103
PA103
14-pin
4 npn transistor ic 14pin
PA1032
8 npn transistor ic 14pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2M-BIT CMOS SYNCHRONOUS FAST 64K-WORD BY 32-BIT PIPELINED OPERATION SRAM Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.
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64K-WORD
32-BIT
uPD432232L
536-word
32-bit
S100GF-65-8ET
PD432232L
PD432232L.
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nec transistor
Abstract: No abstract text available
Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
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UPA102G
UPA102G
hM27S25
UPA102G-E1
2500/REEL
nec transistor
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2M-BIT CMOS SYNCHRONOUS FAST 64K-WORD BY 32-BIT PIPELINED OPERATION SRAM Description The /iP D 432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.
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64K-WORD
32-BIT
uPD432232L
536-word
PD432232L
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Untitled
Abstract: No abstract text available
Text: NEC UPA103B UPA103G TRANSISTOR ARRAY CONNECTION DIAGRAM FEATURES FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be jsed as differential amplifiers Top View UPA103B 14 13 12 11 10 9 8 OUTSTANDING hFE LINEARITY TWO PACKAGE OPTIONS:
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JPA103B:
UPA103G:
14-pin
UPA103B
UPA103G
UPA103B
UPA103B/G
UPA103G
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MC-424000A8BA-60
Abstract: MC-424000A8
Text: NEC Electronics Inc. Description MC-424000A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module Pin Configuration The MC-424000A8 is a fast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS cir cuitry, including a single-transistor storage cell, multi
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MC-424000A8
MC-424000A8
304-word
C-424000A8:
13dia
C-42400M
63CL-6833B
MC-424000A8BA-60
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2561a
Abstract: NEC 2561A 2561A NEC NEC 2561A w PS2561A-1 PS2561AL-1 PC 2561A E4 mark NEC 2561A circuit PS2561AL1-1
Text: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES FEATURES • HIGH ISOLATION VOLTAGE: BV = 5 000 Vr.m.s. PS2561A-1 PS2561AL-1 PS2561AL1-1 PS2561AL2-1 DESCRIPTION NEC’s PS2561A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.
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PS2561A-1
PS2561AL-1
PS2561AL1-1
PS2561AL2-1
PS2561A-1
PS2561AL-1-E3,
PS2561AL2-1-E3,
PS2561AL-1-1-E3
PS2561AL-1
2561a
NEC 2561A
2561A NEC
NEC 2561A w
PC 2561A
E4 mark
NEC 2561A circuit
PS2561AL1-1
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2SC3584
Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for
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OOG144S
NE68100
NE68132
NE68133
NE68135
NE68137
NE68100,
NE68135.
NE681
2SC3584
ne3813
SC358
10r 236
NE AND "micro-X"
el3025
2SC3582
2SC3583
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2SC2407
Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli
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L4H7414
NE416
T-33-Ã
2SC2407
nec 2561 equivalent
2SC1255
NE41607
2sc1949
NE41632B
NC921
NE41635
2SC2407 equivalent
2SC1592
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Untitled
Abstract: No abstract text available
Text: DA TA SHEET NEC / _ / TFT COLOR LCD MODULE N L6448AC20-06 17cm 6.5 type , 640x480 pixels 262144/4096 colors, incorporated edge-light type backlight high brightness, inverter separated from module DESCRIPTION NL6448AC20-06 is a TFT(thin film transistor) active m atrix color liquid crystal display(LCD) com prising am or
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L6448AC20-06
640x480
NL6448AC20-06
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2SC2407 equivalent
Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The
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L4H7414
NE416
for23
2SC2407 equivalent
2SC2407
NC921
nec 2561 equivalent
2SC1592
NE41607
2sc1949
2SC1426 equivalent
nec 2561 le
NE41600
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MC-424000A9BA
Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
Text: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor
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MC-424000A9,
-424100A9
MC-424000A9
C-424100A9
304-word
PD424100
dur005
30-Pin
MC-424000A9BA)
C-424000A9BA
MC-424000A9BA
C-424000A9BA
simm 30-pin 9-bit
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PS9505
Abstract: a 3120 opto HCPL-3120-000E equivalent A 3120 opto HCPL-3120-500E HCPL3120-000E HCPL3120 HCPL-3120-300 AN-3006 PS9505-V
Text: A p p l i c at i o n N o t e AN 3006 Optocoupler Performance Comparison: NEC PS9505 vs. Avago HCPL-3120 Introduction Both the PS9505 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large
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PS9505
HCPL-3120
HCPL-3120
PS9505
HCPL3120.
HCPL-3120.
a 3120 opto
HCPL-3120-000E
equivalent A 3120 opto
HCPL-3120-500E
HCPL3120-000E
HCPL3120
HCPL-3120-300
AN-3006
PS9505-V
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Untitled
Abstract: No abstract text available
Text: DATA SHEET EET PHOTO COUPLERS NEC aEtrm oN PS2653 , PS2654 PS2653L2, PS2654L2 d ev ic e ‘ U ISOLATION i c m a t i r\ m xVOLTAGE /niT A fic LONG CREEPAGE TYPE HIGH 6 PIN PHOTO COUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor in a plastic DIP Dual In-line Package .
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PS2653
PS2654
PS2653L2,
PS2654L2
PS2653,
PS2653
PS2654L2
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