486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
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MARK "326" FET
Abstract: transistor 3669
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
05Electric
Oct2011
MARK "326" FET
transistor 3669
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transistor 21 2u
Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor
Text: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor
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EMD38
DTC114Y
DTA113Z
10k/47k
1k/10k
transistor 21 2u
EMD38
DTA113Z
DTC114Y
EMT6
d38 marking transistor
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Untitled
Abstract: No abstract text available
Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings
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MMBT3646
OT-23
OT-23
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CNZ1105
Abstract: ON1105
Text: Transmissive Photosensors Photo lnterrupters CNZ1105 (ON1105) Unit: mm Photo Interrupter 14.3±0.3 Mark for Indicating LED side Symbol Rating Unit VR 3 V IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage (Base open) transistor) VCEO 30 V Emitter-collector voltage
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CNZ1105
ON1105)
PISTR104-007
CNZ1105
ON1105
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transistor rf m 1104
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
Oct2011
transistor rf m 1104
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audio transistor 274
Abstract: MJ*15033 thermaltrak NJL1302D NJL3281D mje15033 MJL1302A MPSa06 equivalent 1N4148 MJE15032
Text: AND8196/D ThermalTrakt Audio Output Transistors Prepared by: Mark Busier ON Semiconductor http://onsemi.com APPLICATION NOTE Each of the ThermalTrak audio output devices incorporates Ultrafast diode technology as the temperature sensing device along with the audio output transistor.
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AND8196/D
O-220)
audio transistor 274
MJ*15033
thermaltrak
NJL1302D
NJL3281D
mje15033
MJL1302A
MPSa06 equivalent
1N4148
MJE15032
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diode gp 434
Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)
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RD07MVS2
175MHz
520MHz
520MHz
175MHz)
520MHz)
diode gp 434
RD07MVS2
diode zener 7.2v
RD07MVS1
T112
318 MARKING DIODE
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KSA1013
Abstract: No abstract text available
Text: KSA1013 PNP Epitaxial Silicon Transistor Features • Color TV Audio Output • Color TV Vertical Deflection Output 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1013YBU KSA1013OBU KSA1013YTA Bulk
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KSA1013
O-92L
KSA1013YBU
KSA1013OBU
KSA1013YTA
A1013
KSA1013OTA
KSA1013
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KSC1815YTA
Abstract: ksc1815
Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
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KSC1815
KSA1015
KSC1815YTA
KSC1815YTA
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Untitled
Abstract: No abstract text available
Text: FSB749 PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. Sourced from process PC. E B SuperSOTTM-3 Ordering Information Part Number Top Mark
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FSB749
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Untitled
Abstract: No abstract text available
Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
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KSC1815
KSA1015
KSC1815YTA
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RSS060P05
Abstract: No abstract text available
Text: RSS060P05FRA RSS060P05 Transistor 4V Drive Pch MOSFET AEC-Q101 Qualified RSS060P05 RSS060P05FRA zDimensions Unit : mm zStructure Silicon P-channel MOSFET SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode.
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RSS060P05FRA
RSS060P05
AEC-Q101
RSS060P05
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Untitled
Abstract: No abstract text available
Text: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L
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BC63916
BC63916
BC639-16
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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pn2907
Abstract: No abstract text available
Text: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information
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PN2907
MMBT2907
PN2907
OT-23
PN2907BU
MMBT2907
OT-23
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transistor A6A
Abstract: No abstract text available
Text: RSS060P05 Transistor 4V Drive Pch MOSFET RSS060P05 zStructure Silicon P-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (8)
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RSS060P05
transistor A6A
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TRANSISTOR D 1765
Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
Oct2011
TRANSISTOR D 1765
transistor mosfet 4425
1776
48T08
TRANSISTOR D 1765 720
T72 MARKING
1788
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Untitled
Abstract: No abstract text available
Text: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
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FJX3906
SC-70
FJX3906TF
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TRANSISTOR DNH
Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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30MIN.
15MIN.
17MIN.
14MIN.
TRANSISTOR DNH
PS5022
PS1191RA
PP1101W
PS1101RA
PS1101WA
PS1102HA
PS1192FA
PS1192HA
peak spectral response 900 nm photo detector
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MTD6180
Abstract: MTE1070A
Text: I flE D 5 7 ^ 5 5 GGD04Q4 4 PHOTO TRANSISTOR MARK TECH INTERNATIONAL MTD6180 SILICON NPN EPITAXIAL PLANAR - I— t 1 I SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR u S fc d J K' L M APPLICATIONS • OPTICAL SWITCH F —H • INTER R U PTER 1. EMITTER 2. COLLECTOR
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MTD6180
MTE1070A.
MTD6180
MTE1070A
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MG50G2CL3
Abstract: TF1204 MG50G2cl3 toshiba gtr driver 05il
Text: TOSHIBA TF1204 TOSHIBA SOLID STATE GTR DRIVER MODULE TF1204 GTR DRIVER Unit in mm 9MAX. 30 MAX. TOSHIBA TF1204 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the , TYPE \ MARK optical isolator and GTR driver circuit.
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TF1204
TF1204
2000VrmS
10-30D1A
MG50G2CL3
MG50G2cl3 toshiba
gtr driver
05il
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IRF540 n-channel MOSFET BATTERY CHARGER
Abstract: 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual
Text: UNITRODE CORPORATION U-167 UC3578 TELECOM BUCK CONVERTER EVALUATION BOARD By Mark Dennis Unitrode Corporation ABSTRACT This application note describes a simple solution for a buck converter operating from an input of 15V to 72V with an N channel MOSFET switching transistor. Using this switch configuration requires a gate potential higher than the input
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U-167
UC3578
UC3S78
48Vions
Q1/95
IRF540 n-channel MOSFET BATTERY CHARGER
1rf530
IRF540 irf520 comparison
UNITRODE applications handbook
UNITRODE product and applications handbook
H. Dean Venable
schematic diagram 72vdc battery charger
48V to 12V buck transformer
RF520
HEXFET Power MOSFET designer manual
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