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    TRANSISTOR KSH 200 Search Results

    TRANSISTOR KSH 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KSH 200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ksh 200 TRANSISTOR equivalent

    Abstract: KSH 200 TRANSISTOR
    Text: KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112


    Original     		PDF KSH112 TIP112 KSH112 KSH112GTM SB82051 KSH112TF KSH112TM ksh 200 TRANSISTOR equivalent KSH 200 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: KSH41C KSH41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application No Suffix • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C


    Original     		PDF KSH41C TIP41 TIP41C KSH41C KSH41CTF KSH41CTM

    MURS1100

    Abstract: SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100
    Text: CPE Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 D1 CMPSH-3 20 VP 19 VL BST ILIM COMP C1 8.2nF DH GND U1 MAX1865T R17 100k OUT 1 POK FB C3 0.1uF 17 16 DL C5 4.7uF 25V 18 LX VL C4 1000uF 25V MV-AX 15 T1 1:1:2 Lpri = 3.8uH VP4-0047 N1A 1/2 FDS 6912A R2 10 R3


    Original     		PDF MAX1865T 1000uF VP4-0047 680uF 330uF FZT749 EC10QS06 MURS1100 FDS6912A MURS1100 SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100

    transistor equivalent ksh200

    Abstract: ksh200 TRANSISTOR equivalent ksh200 equivalent analog 7368 TLE7368E fairchild ignition controller 7368G PG-DSO-36 TLE7368 7368
    Text: T ar ge t d at a s h eet , R ev 0 .61 , 2 00 6- 12- 1 8 TLE 7368 Next generation micro controller supply Automotive Power N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


    Original     		PDF PG-DSO-36-24 GPS01153 transistor equivalent ksh200 ksh200 TRANSISTOR equivalent ksh200 equivalent analog 7368 TLE7368E fairchild ignition controller 7368G PG-DSO-36 TLE7368 7368

    transistor equivalent ksh200

    Abstract: ksh200 equivalent TLE7368 PG-DSO-36-24 TLE7368E TLE7368E,PG-DSO-36-24 P-DSO-36-12 ksh200 TRANSISTOR equivalent TLE7368G 7368G
    Text: Data Sheet, Rev. 1.1, November 2007 TLE7368 Next Generation Micro Controller Supply Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF TLE7368 transistor equivalent ksh200 ksh200 equivalent TLE7368 PG-DSO-36-24 TLE7368E TLE7368E,PG-DSO-36-24 P-DSO-36-12 ksh200 TRANSISTOR equivalent TLE7368G 7368G

    TLE7368

    Abstract: No abstract text available
    Text: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF TLE7368 TLE7368G TLE7368E TLE7368-2E TLE7368-3E TLE7368

    transistor equivalent ksh200

    Abstract: TLE7368G ksh200 equivalent TLE7368 TLE7368-3E TLE7368E TLE7368-2E 4139 sensor ksh200 TRANSISTOR equivalent TLE368E
    Text: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF TLE7368 TLE7368G TLE7368E TLE7368-2E TLE7368-3E transistor equivalent ksh200 TLE7368G ksh200 equivalent TLE7368 TLE7368-3E TLE7368E TLE7368-2E 4139 sensor ksh200 TRANSISTOR equivalent TLE368E

    KSH 200 TRANSISTOR

    Abstract: Transistor ksh 200 E506
    Text: KSH32/32C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • L o a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n N o S u ffix • S tra ig h t L e a d (I.P A C K ,


    OCR Scan     		PDF KSH32/32C KSH 200 TRANSISTOR Transistor ksh 200 E506

    TIP29 transistor

    Abstract: No abstract text available
    Text: KSH29/29C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK Load Formed for Surface Mount Application No Suffix Straight Lead ( L A C K , 1 “ Suffi x) Electrically Similar to Popular TIP29 and TIP29C


    OCR Scan     		PDF KSH29/29C TIP29 TIP29C KSH29 200mA TIP29 transistor

    SD1406

    Abstract: SD2058 KSD201 sb1150 SD-1406
    Text: TRANSISTORS FUNCTION GUIDE 2.1.6 T0-220 F Type T ran sisto rs 'c VcEO (A) (V) Device Type V ce NPN 1.5 150 3 55 Condition K SC 3 2 9 6 Condition Hfe lc lc (V) (A) MIN MAX (A) (A) K SA 130 4 10 0.5 40 75 0.5 0.05 K SA 1614 5 0.5 40 240 1 0.1 PNP V CE(sat)(V) Condition


    OCR Scan     		PDF T0-220 KSH12 SD1406 SD2058 KSD201 sb1150 SD-1406

    tny 175

    Abstract: TDA8179 TNY IC POWER SUPPLY vd56 TDA8179S TV booster diagram 7707 u711 tny 200
    Text: 7^5=1537 £jJ 005400=1 1 m 'T - 7 l~ c n - \ \ S C S -T H O M S O N TDA8179 ilLO S G S-THOMSON 30E D TV VERTICAL DEFLECTION BOOSTER ADVANCE DATA POWER AMPLIFIER FLYBACK GENERATOR 105V PEAK THERMAL PROTECTION CURRENT LIMITED TO GND DESCRIPTION Designed for Monitors and high performance TVs,


    OCR Scan     		PDF TDA8179 TDA8179 77-07-n T-77-07-TI tny 175 TNY IC POWER SUPPLY vd56 TDA8179S TV booster diagram 7707 u711 tny 200

    GE TRIAC SC40B

    Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N4992 SC40B GE TRIAC SC40B 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    transistor D128

    Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
    Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes


    OCR Scan     		PDF TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L TC518129B TheTC518129B D-132 TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL D-133 transistor D128 TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The tech n o lo gy used to fab ricate the M SM 514100A/AL is O KI's CMOS silicon gate process


    OCR Scan     		PDF MSM5141OOA/AL_ 304-Word MSM514100A/AL 14100A/AL MSM514100 MSM514100A/ALÂ MSM5141OOA/AL*

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750

    TRANSISTOR 2SC 983

    Abstract: INTERNATIONAL RECTIFIER TNR*G 1000C HFA16PA120C
    Text: International i»r:Rectifier_ HEXFRED U n its C h a ra c te ris tic s 1200 V V rrm If A V 8.0 A trr (ty p ) 28 ns 140 nC Q r r (ty p ) HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M a jo r R a tin g s a n d C h a ra c te r is tic s (p er Leg) Vr Provisional Data Sheet PD-2.361


    OCR Scan     		PDF HFA16PA120C D-6380 Ugurla49 TRANSISTOR 2SC 983 INTERNATIONAL RECTIFIER TNR*G 1000C

    DU9 308

    Abstract: 32-PIN MSM5117900-70 MSM5117900-80
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117900 152-Word MSM5117900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN DU9 308 32-PIN MSM5117900-70 MSM5117900-80

    TC88411F

    Abstract: TC88411
    Text: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory


    OCR Scan     		PDF TC58A040 256-bit TC58A040F--29_ TC58A040F OP28-P-450 TC58A040F--30* TC88411F TC88411

    new Jj8

    Abstract: No abstract text available
    Text: TO SH IB A TC58A040F TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E^PROM DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits X 128 pages X 128 blocks.


    OCR Scan     		PDF TC58A040F TC58A040 256-bit TC58AO40 new Jj8

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS


    OCR Scan     		PDF 7C518129A-LV TC518129A-LV -12LV TC518129AFWL-80LV TC518129AFWL-10LV TC518129AFWL-12LV TC518129APL/AFL/AFWLâ -10LV,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS


    OCR Scan     		PDF L06IC/NEH0RY TC518129A-LV TC518129APL/AFL/AFWLâ -10LV, -12LV TC518129AFTL/ATRLâ

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    D880 voltage regulator

    Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5


    OCR Scan     		PDF OT-23 KST06 KST05 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71 BCX71H D880 voltage regulator B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180