16c72a
Abstract: DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
D-81739
16c72a
DS275
P16C72A
16C72
1uf/35v
A 393F
buck converter with dsPIC
KI 78L05
PID control dsPIC
PID control dsPIC DC motor
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Untitled
Abstract: No abstract text available
Text: DRV3211-Q1 www.ti.com SLVSBS4 – DECEMBER 2012 3-Phase Brushless Motor Driver FEATURES DESCRIPTION • The DRV3211-Q1 device is a field effect transistor FET pre-driver designed for 3-phase motor control and its application such as an oil pump or a water
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DRV3211-Q1
DRV3211-Q1
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Untitled
Abstract: No abstract text available
Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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DRV3204-Q1
DRV3204-Q1
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Untitled
Abstract: No abstract text available
Text: an A M P company Radar Pulsed Power Transistor, 135W, 20jis Pulse, 1% Duty 2.9 - 3.1 GHz PH2931 -135S • • • • • • • • V2.00 suo üfe Features NPN Silicon P ow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ra tio n
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20jis
PH2931
-135S
TT50M50A
ATC100A
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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B0508
Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
Text: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS
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b3b7E54
BD505.
BD507,
BD509
BD506.
BD506
506-BD
B0508
transistor f 506
506bd
BD507
uniwatt
BD510
80509
BD505
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR 1 Ç \ C SILICON N CHANNEL MOS TYPE tt-MOSV 1 f% f% 1 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 •
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2SK2662
20kil)
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JE8050
Abstract: JE8550
Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE8050 D E SC R IP T IO N The JE8050 is designed for use in 2 W output amplifier of P A C K A G E D IM E N S IO N S portable radios in class B push-pull operation. in m illim eters inches FEATURES • High total power dissipation. (P-f : 2.0 W,
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JE8550.
JE8050
JE8050
JE8550
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Untitled
Abstract: No abstract text available
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL 6N135, 6N136 DATA GaA€As IRDE & PHOTO IC 6N135 DIGITAL LOGIC ISOLATION. U nit in mm LINE RECEIVER. POWER SUPPLY CONTROL 8 SWITCHING POWER SUPPLY ,‘t i 7 rr3 6 5 ti rr 3 4 TRANSISTOR INVERTER. 1 2 The TOSHIBA 6N135 and 6N136 consists of a high em itting diode
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6N135,
6N136
6N135)
6N135
6N136
2500Vrms
TLP550
UL1577,
E67349
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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BD506
Abstract: BD509 BD510 10 watt power transistor bd uniwatt transistor bd509 BD505 BD506-1 BD506-5 BD507
Text: BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PN P SILIC O N A U D IO T R A N S IS T O R S PN P SILIC O N A N N U LA R * 20 - 30 - 40 VOLTS 10 WATTS T R A N S IS T O R S . . designed for complementary symmetry audio circuits • Excellent Current G ain Linearity — 1.0 m A dc to 1.0 A d c
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BD506
BD508
BD510
BD505.
BD507,
BD509
BDS06.
BD506-1,
BD506-5,
BD508
BD506
BD509
10 watt power transistor bd
uniwatt
transistor bd509
BD505
BD506-1
BD506-5
BD507
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MMT806
Abstract: MMT808
Text: MMT806 SILICON M ICROM INIATURE NPN SILICON ANNULAR TRANSISTOR MICRO POWER SER IES NPN SILICON SWITCHING TRANSISTOR . . . designed for high-speed, low-power switching circuits. • DC Current Gain @ Ultra Low C urrent— • High Current'Gain — Bandwidth Product —
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MMT806
MMT808
100MAdc,
10/JAdc)
10MAdc,
MMT806
MMT808
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2N6701
Abstract: s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n HPAC-100
Text: m COM PONENTS LINEAR POWER TRANSISTOR 2N6701 HXTR-5101 Features H IG H P 1dB LIN E A R PO W ER 23 dBm Typical at 2 G Hz 22 dBm Typical at 4 G Hz BIPOLAR 1.0 '0.041 TYP TRANSISTORS HEW LETT W , PACKARD H IG H P1dB G A IN 13 dB Typical at 2 G Hz 7.5 dB Typical at 4 GHz
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2N6701
HXTR-5101)
HPAC-100
2N6701
s parameters 4ghz
HXTR-5101
4ghz s parameters transistor
S21E
4ghz transistor n
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2SK3090
Abstract: No abstract text available
Text: TOSHIBA 2SK3090 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2SK3090 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL APPLICATIONS Low Drain-Source ON Resistance
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2SK3090
VDD-24V,
2SK3090
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transistor tic 2260
Abstract: tic 2260
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX458 ISSUE 3 - OCTOBER 1995_ FEATURES * * 400 V o lt V CE0 Pt0,= 1 W a tt CO M PLEM ENTARY TYPE - FCX558 PARTM AR KIN G DETAIL - N58 #• B ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER VALUE
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FCX458
FCX558
300jis.
FMMT458
transistor tic 2260
tic 2260
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2SK3127
Abstract: No abstract text available
Text: TOSHIBA 2SK3127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 3 1 27 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS tt-MOSVI 10.3MAX.
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2SK3127
O-220FL
2SK3127
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DIODE S4 45a
Abstract: DIODE S4 92 2SK3127
Text: TOSHIBA 2SK3127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 27 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS
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2SK3127
O-220FL
DIODE S4 45a
DIODE S4 92
2SK3127
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2SK3090
Abstract: No abstract text available
Text: TOSHIBA 2SK3090 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3090 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS tt-MOSVI 1 0 .3 M A X .
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2SK3090
VDD-24V,
2SK3090
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Untitled
Abstract: No abstract text available
Text: rZ 7 Ê SGS-THOMSON 5 M K 53731 IL K S IM K S SINGLE NUMBER PULSE TONE SWITCHABLE DIALER • SINGLE CHIP DTMF AND PULSE DIALER ■ SOFTSWITCH CHANGES SIGNALING MODE FROM PULSE TO TONE ■ RECALL OF LAST NUMBER DIALED up to 28 digits long ■ FLASH KEY INPUT INITIATES TIMED HOOK
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ms 7254 ver 1.1
Abstract: ms 7254 ver 3.0 mj16006 MJH16008 mj16008 JH-1600 JH1600 2n5337 CUB 41 MJH1600S
Text: MOTORCLA SC X ST R S/R 1 EE F D b3L 7254 I MOTOROLA d O flS ia ? 1 | MJ16006 MJH16006 MJ16008 MJH16008 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S lio o t 8.0 AMPERE SW ITCH M O D E III S E R IE S NPN SILICO N PO W ER T R A N S IS T O R S NPN SILICON
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MJ16006
MJH16006
MJ16008
MJH16008
J16008
JH16008
JH16006
MJH16006
MJ16006
ms 7254 ver 1.1
ms 7254 ver 3.0
MJH16008
JH-1600
JH1600
2n5337
CUB 41
MJH1600S
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2SB1353A
Abstract: B1353A 2sd2033a 2SB135 2SD2033
Text: h "7 > y 7. $ /Transistors 2SD2033A 2SD2033A Epitaxial Planar NPN Silicon Transistor l&JiiÄ^^jiÖ 'Üffl/Low Freq. Power Amp. • W fi ii@ /Dim ensions U n it: mm 1 ) iS S if } S T S 5 o BVc e o = 1 6 0 V 2) S O A ^ L ' o 3 ) fT * ' " « < , C o b fr'iS '-'o
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2SD2033A
2SD2033A
2SB1353A.
--100ms
2SB1353A
B1353A
2SB135
2SD2033
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MMT3960
Abstract: No abstract text available
Text: MMT3960 silicon NPN SILICON ANNULAR MICRO-T* TRANSISTOR NPN SILICON HIGH-SPEED SWITCHING TRANSISTOR . designed fo r high-speed current-m odelogicswitchingapplications. # High C urrent-G ain-B andw idth Product f j = 2250 MHz (Typ) @ I q = 10 mAdc • Low In p u t and O u tp u t Capacitance —
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MMT3960
100MHz>
MMT3960
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transistor tic 2260
Abstract: tic 2260
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 -OCTOBER 1995 it FEA TU RES * 400 V o lt V CF0 CO M PLEM EN TA RY T Y P E - FM M T558 P A R T M A R K IN G D E T A IL - 45 8 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L C o lle cto r-B ase V o ltag e
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FMMT458
amtp25
lc--10m
20MHz
-10mA
transistor tic 2260
tic 2260
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2SA1727
Abstract: A1727
Text: h ~7> V 7, $ /Transistors 2 S A 172 7 = W 2 S A 1 7 2 7 m ? ^ - i- t e PN P y U □ > h 7 > v X * Triple Diffused Planar P N P Silicon Transistor High Voltage Switching Power Supply Switching of Telephone • \f;£[23/Dimensions {U n it: mm) 1) 2 .3 * r
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23/Dimensions
--400V
2SA1727
2SA1727
A1727
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