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    Rochester Electronics LLC MJH16006A

    TRANS GP BJT NPN 500V 8A
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    DigiKey MJH16006A Bulk 7 107
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    Motorola Semiconductor Products MJH16006A

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    Motorola Semiconductor Products MJH16006

    Bipolar Junction Transistor, NPN Type, TO-218AC
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    Quest Components MJH16006 14
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    onsemi MJH16006A

    Trans GP BJT NPN 500V 8A 3-Pin(3+Tab) SOT-93 '
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    Rochester Electronics MJH16006A 1,614 1
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    MJH16006 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MJH16006 Motorola POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS Original PDF
    MJH16006 On Semiconductor POWER TRANSISTORS Original PDF
    MJH16006 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJH16006 Motorola Switchmode Datasheet Scan PDF
    MJH16006 Motorola European Master Selection Guide 1986 Scan PDF
    MJH16006 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJH16006 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJH16006 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    MJH16006A Motorola POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS Original PDF
    MJH16006A On Semiconductor NPN Silicon Power Transistor Original PDF
    MJH16006A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJH16006A Motorola Switchmode Datasheet Scan PDF
    MJH16006A Motorola European Master Selection Guide 1986 Scan PDF
    MJH16006A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJH16006A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJH16006A Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    MJH16006A-D On Semiconductor NPN Silicon Power Transistor 1 kV SWITCHMODE Serie Original PDF

    MJH16006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LPtoaucti., Dnc. ^T.£.\i£.u C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJH16006A Designer's Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in


    Original     		PDF MJH16006A

    MR918

    Abstract: MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302
    Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A  Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


    Original     		PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302

    MR918

    Abstract: MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10
    Text: ON Semiconductort NPN Silicon Power Transistor MJH16006A 1 kV SWITCHMODEt Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.


    Original     		PDF MJH16006A r14525 MJH16006A/D MR918 MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJH16006 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCECXSUS) = 450V(Min) • High Switching Speed


    Original     		PDF MJH16006

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2sd880 equivalent 2N3055 equivalent transistor NUMBER pin configuration NPN transistor tip41c BDX37 equivalent MJE350 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH16006A  Data Sheet Designer's NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


    Original     		PDF Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TRANSISTOR REPLACEMENT GUIDE bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2sd880 equivalent 2N3055 equivalent transistor NUMBER pin configuration NPN transistor tip41c BDX37 equivalent MJE350 equivalent

    MR918

    Abstract: MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503
    Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A  Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


    Original     		PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA M JH 16006A D esigner’s Data Sheet NPN Silicon Pow er Transistor POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS 1 kV SWITCHMODE Series T hese transisto rs are d e sig n e d for h ig h -v o lta g e , h ig h -s p e e d , po w e r sw itch ing in


    OCR Scan     		PDF MJH16006A/D 6006A 340D-02

    ms 7254 ver 1.1

    Abstract: ms 7254 ver 3.0 mj16006 MJH16008 mj16008 JH-1600 JH1600 2n5337 CUB 41 MJH1600S
    Text: MOTORCLA SC X ST R S/R 1 EE F D b3L 7254 I MOTOROLA d O flS ia ? 1 | MJ16006 MJH16006 MJ16008 MJH16008 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S lio o t 8.0 AMPERE SW ITCH M O D E III S E R IE S NPN SILICO N PO W ER T R A N S IS T O R S NPN SILICON


    OCR Scan     		PDF MJ16006 MJH16006 MJ16008 MJH16008 J16008 JH16008 JH16006 MJH16006 MJ16006 ms 7254 ver 1.1 ms 7254 ver 3.0 MJH16008 JH-1600 JH1600 2n5337 CUB 41 MJH1600S

    ST-13002

    Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
    Text: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS


    OCR Scan     		PDF GDDD533 ST44TE5 D44TE5 O-220 ST-12007 MJE-12007 ST-13002 MJE-13002 mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845