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    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 6 0 Volt V,C E O G ain o f 10K at lc=0.5 A m p P ,o ,= 1 W att ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER V A LU E U N IT v CB0 80 V Collector-Emitter Voltage


    OCR Scan     		PDF amtp25 BCX38A/B/C

    transistor tic 2260

    Abstract: tic 2260
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 -OCTOBER 1995 it FEA TU RES * 400 V o lt V CF0 CO M PLEM EN TA RY T Y P E - FM M T558 P A R T M A R K IN G D E T A IL - 45 8 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L C o lle cto r-B ase V o ltag e


    OCR Scan     		PDF FMMT458 amtp25 lc--10m 20MHz -10mA transistor tic 2260 tic 2260

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SIUCON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 - OCTOBER 1995_— — — FEATURES * Extremely low equivalent on-resistance; RCE(Mrt) 44mil at 5A * 6 Amps continuous current (Up to 20 Amps peak)


    OCR Scan     		PDF OT223 FZT968 44mil amtp25Â

    ZRC400

    Abstract: No abstract text available
    Text: PRECISION 4.096 VOLT LOW KNEE CURRENT VOLTAGE REFERENCE ZRC400 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRC400 uses a bandgap circuit design to achieve a precision m icro p o w er voltage re fere n ce of 4.096 v o lts . T h e d e vice is available in sm all outline surface mount


    OCR Scan     		PDF ZRC400 ZRC400 ZRC400A03 ZRC400A02 ZRC400A01 ZRC400F03 ZRC400F02 ZRC400F01 ZRC400N803

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 3 - NOVEM BER 1995 O_ C O M PLEM EN TA R Y T Y P E - FCX593 PA RTM A RKIN G D E T A IL - N93 ABSOLUTE MAXIMUM RATINGS. PARAMETER VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage


    OCR Scan     		PDF FCX593 amtp25 100nA 100jiA 500mA, 100mA 250mA, 100MHz 300jis.

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * A \ Ros.on,=20n m JffS Gs E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS -100 V Continuous Drain Current at Tamtj=25°C b


    OCR Scan     		PDF amtp25Â cH7Q57Ã 0Q1Q354 001G35S

    bcx38

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR IS S U E !-A P R IL 94_ FEATURES * 100 Volt VCE0 * 800 m A continuous current * Gain of 10K at Jc=500mA * Ptot=1 Watt REFER TO BCX38 FOR GRAPH S ABSOLUTE M A X IM U M RATINGS.


    OCR Scan     		PDF 500mA BCX38 amtp25 500mA, 300ns. ZTX649

    ZRC250R1

    Abstract: ZRC250R01
    Text: PRECISION 2.5 VOLT LOW KNEE CURRENT VOLTAGE REFERENCE ZRC250 ISSUE 3 - M A RCH 1998 DEVICE DESCRIPTION FEATURES The ZRC250 uses a bandgap circuit design to achieve a precision m icropow er voltage reference of 2.5 volts. The device is available in small outline surface mount packages,


    OCR Scan     		PDF ZRC250 ZRC250 ZRC250A03 ZRC250A02 ZRC250A01 ZRC250F03 ZRC250F02 ZRC250F01 ZRC250R1 ZRC250R01

    ZRC500

    Abstract: No abstract text available
    Text: PRECISION 5.0 VOLT LOW KNEE CURRENT VOLTAGE REFERENCE ZRC500 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRC500 uses a bandgap circuit design to achieve a precision m icro p o w er voltage reference of 5.0 volts. The device is available in sm all outline surface mount packages,


    OCR Scan     		PDF ZRC500 ZRC500 ZRC500A03 ZRC500A02 ZRC500A01 ZRC500F03 ZRC500F02 ZRC500F01 ZRC500N803

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan     		PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - APRIL 94 FEA TU R ES * 170 Volt BV ds A PPLICA TIO N S * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAM ETER SY M B O L VALUE UNIT Drain-Source Voltage V DS 170 V Continuous Drain Current at T amb=25°C


    OCR Scan     		PDF amtp25 100mA

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 ISSUE 2 - MARCH 94 FEATURES * 12 Volt V CE0 * P fT=400M H z s f E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF ZTX510 amtp25Â -10nA 0Q1Q354 001G35S

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94_ FEATURES * 100 Volt v DS * RDS on = REFER TO ZVN2110A FOR GRAPHS PARAMETER SYM BO L Drain-Source Voltage VDS 100 V Continuous Drain Current a tT amt5=25°C •d 320 mA Pulsed Drain Current


    OCR Scan     		PDF ZVN2110A amtp25 13-State

    Untitled

    Abstract: No abstract text available
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZREF25 uses a bandgap circuit design to achieve a precision m icro p o w er voltage reference of 2.5 volts. The device is available in a sm all outline surface mount package,


    OCR Scan     		PDF ZREF25 ZREF25 ZREF25D02 ZREF25D ZREF25Z02 ZREF25Z ZREF2502

    ZVN2106A

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94_ FEATURES * 60 V o lt V DS * RDS!onr2n ABSOLUTE MAXIMUM RATINGS. PA R A M ET ER SYM BO L V ALU E UNIT V DS 60 V Continuous Drain Current at T amy=25°C •d 450 mA Pulsed Drain Current


    OCR Scan     		PDF atTamip25Â ZVN2106A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 400 Volt V,DS ^DS on = 0£2 ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER VALUE UNIT 400 V ta 90 mA 'd m 600 mA Gate-Source Voltage V GS ±20 V


    OCR Scan     		PDF amtp25 100mA 100mA