sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
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SC73P2602
SC73P2602
SC73C16
sf 128 transistor
TRANSISTOR SF 128
Triode 8050
marking P53 transistor
ic marking k52
SC73P16
bd 8050 TRANSISTOR
part MARKING k48
marking k47
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2sk4202
Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
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2SK4202
2SK4202
2SK4202-S19-AY
O-220
nec k4202
k4202
2sk420
d1922
2SK4202-S19-AY
NEC TRANSISTOR MARKING CODE
2SK4202-S19
2SK42
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k4202
Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
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2SK4202
2SK4202
2SK4202-S19-AY
O-220
k4202
nec k4202
d1922
2SK4202-S19-AY
D19229EJ1V0DS
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K4201
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
K4201
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2SK4201
Abstract: 2SK4201-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
2SK4201-S19
2SK42
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K4207
Abstract: No abstract text available
Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)
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2SK4207
K4207
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RP112N321D
Abstract: No abstract text available
Text: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,
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RP112x
150mA
EA-258-131024
10kHz
100kHz.
Room403,
Room109,
10F-1,
RP112N321D
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2SK4207
Abstract: No abstract text available
Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
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2SK4207
2SK4207
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K4207
Abstract: 2SK4207 SC-65
Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
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2SK4207
K4207
2SK4207
SC-65
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V23990-K420-A60-PM
Abstract: No abstract text available
Text: V23990-K420-A60-PM target datasheet MiniSKiiP 3 PIM 1200V/100A Features MiniSKiiP® 3 housing ● Solderless interconnection ● Mitsubishi Generation 6.1 technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K420-A60-PM Maximum Ratings
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V23990-K420-A60-PM
200V/100A
V23990-K420-A60-PM
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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BUK426-200A
Abstract: TTPC BUK426-200B
Text: 7 = 3 ? - / / Philips Com ponents BUK426-200A/B Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic full pack envelope.
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BUK426-200A/B
BUK426
-200A
-200B
-SOT199
BUK426-200A
TTPC
BUK426-200B
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k426
Abstract: LD 25 V BUK426-800A transistor bu
Text: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK426-800A/B
711005t.
BUK426
-600A
-800B
PINNING-SOT199
k426
LD 25 V
BUK426-800A
transistor bu
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k427 transistor
Abstract: k427 k427 diode BUK427-500B
Text: 7=3 Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor m 711Q6Hb DQM4145 12G PHILIPS INTERNATIONAL SbE GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.
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BUK427-500B
DQM4145
PINNING-SOT199
k427 transistor
k427
k427 diode
BUK427-500B
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2SK520
Abstract: k41 transistor transistor k41 transistor k42 marking k42 AM radio K447
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK 520 HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in m illim » t» ri • Good for AM Radio Application • High I y,s I I yfs I = 17 mS TYP. 2 8 *0 -2
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2SK520
2SK520
k41 transistor
transistor k41
transistor k42
marking k42
AM radio
K447
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Transistor Bo 17
Abstract: BUK426-50A BUK426-60A BUK426-60B PINNING-SOT199
Text: PHILI PS INTERNATIONAL 5L.E T> 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 BUK426-60A/B 7^39-t/ PowerMOS transistor Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK426-50A/B
G0N4115
K426-60A/B
PINNING-SOT199
BUK426
Transistor Bo 17
BUK426-50A
BUK426-60A
BUK426-60B
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k427 transistor
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ^ 5 3 7 3 1 0050260 0 2SE D PowerMOS transistor B U K 4 2 7-60 0 A B U K 427-600B G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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427-600B
BUK427
-600A
-600B
bb53131
7-600A
k427 transistor
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"Photo Interrupter"
Abstract: photo diod PS4501
Text: E C ELECTRONICS INC 30E D • k4275S5 002^700 fi ■ T"'-*+1 - X 3 PHOTO INTERRUPTER PS4501 PHOTO IN T E R R U P T E R DESCRIPTION PACKAGE DIMENSIONS The PS4501 photo coupled interrupter module containing a GaAs in m illim tttft light emitting diode and an NPN silicon photo-transistor.
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PS4501
PS4501
"Photo Interrupter"
photo diod
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BUK426-1000A
Abstract: BUK426-1000B BUK426-100
Text: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION
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BUK426-1OOOA/B
711002b
BUK426
-1000A
-1000B
-SOT199
T-39-11
K426-10OOA/B
BUK426-1000A
BUK426-1000B
BUK426-100
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k428
Abstract: MC 140 transistor "MC 140" transistor K-428 transistor mc 140 diode K428
Text: 7 ^ 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK428-1OOOA/B
711Dfl2b
00M454fl
BUK428
-1000A
-1000B
-SOT199
BUK428-1000A/B
7110aab
k428
MC 140 transistor
"MC 140" transistor
K-428
transistor mc 140
diode K428
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K428
Abstract: MC 140 transistor "MC 140" transistor BUK428-1000B diode K428
Text: 7 ^ 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK428-1OOOA/B
711Dfl2b
00M454fl
BUK428
-1000A
-1000B
-SOT199
K428
MC 140 transistor
"MC 140" transistor
BUK428-1000B
diode K428
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k426
Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
Text: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode
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BUK426-50A/B
K426-60A/B
-39-i/
PINNING-SOT199
BUK426
k426
bu 515
BUK426-50A
transistor 03e
Transistor Bo 17
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2SA800
Abstract: NE59300 NE59335 ci 4081 NE AND micro-X NE593 NE59312 NE59333 NE734 C-48Hrs
Text: N E C / DE bMS7414 30 C A L IF O R N IA 64 27 41 4 N E C/ CAL IFO RNIA DODQISB 0 |~~ 30C 00 15 3 07^3/-/*^ MICROWAVE TRANSISTOR SERIES FEATURES DESCRIPTION AND APPLICATIONS T he N E 5 9 3 Series of PNP silicon general purpose U H F tran sistors provide the designer w ith a wide selection of reliable
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bMS7414
NE734
Ta-25
NE593
NE59300)
NE59335
NE59333.
2SA800
NE59300
ci 4081
NE AND micro-X
NE59312
NE59333
NE734
C-48Hrs
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Untitled
Abstract: No abstract text available
Text: T Philips Components Data sheet status Product specification date of issue M a rch 1991 3 ' ? - // B U K 4 2 6 - 10 0 0 A /B PowerMOS transistor PHI L IP S I N T E R N A T I O N A L SbE J> m 7 1 1 0 0 2 b 0 0 4 4 1 3 5 2Ô1 H P H I N l_ i
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BUK426
T-39-11
711062b
BUK426-1OOOA/B
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