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    2SK420 Search Results

    2SK420 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK4201-S19-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25LK, /Tube Visit Renesas Electronics Corporation
    2SK4202-S19-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25LK, /Tube Visit Renesas Electronics Corporation
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    2SK420 Price and Stock

    onsemi 2SK4209

    MOSFET N-CH 800V 12A TO3PB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK4209 Tray 100
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    • 100 $5.314
    • 1000 $5.314
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    Rochester Electronics LLC 2SK4201-S19-AY

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK4201-S19-AY Bulk 108
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    • 1000 $2.79
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    Rochester Electronics LLC 2SK4202-S19-AY

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK4202-S19-AY Bulk 135
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    • 1000 $2.24
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    Renesas Electronics Corporation 2SK4201-S19-AY

    Trans MOSFET N-CH 100V ±80A 3-Pin TO-220 Tube - Rail/Tube (Alt: 2SK4201-S19-AY)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK4201-S19-AY Tube 4 Weeks 130
    • 1 $2.82
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    Rochester Electronics 2SK4201-S19-AY 11,000 1
    • 1 $2.82
    • 10 $2.82
    • 100 $2.65
    • 1000 $2.4
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    Renesas Electronics Corporation 2SK4202-S19-AY

    - Rail/Tube (Alt: 2SK4202-S19-AY)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK4202-S19-AY Tube 4 Weeks 162
    • 1 $2.26
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    • 100 $2.26
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    Rochester Electronics 2SK4202-S19-AY 10,000 1
    • 1 $2.26
    • 10 $2.26
    • 100 $2.12
    • 1000 $1.92
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    Find more 2SK420 price and stock on Findchips.com

    2SK420 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK420 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK420 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK420 Unknown FET Data Book Scan PDF
    2SK420 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK420 Toshiba Silicon N-Channel MOS Type Transistor Scan PDF
    2SK420/1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK420/2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK420/3 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK420/4 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK420/5 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK420/6 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK4207 Toshiba 2SK4207 - TRANSISTOR 13 A, 900 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power Original PDF
    2SK4207 Toshiba Transistors - Mosfets Original PDF
    2SK4207 Toshiba Japanese - Transistors - Mosfets Original PDF
    2SK4209 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 12A TO-3PB Original PDF
    2SK4209 SANYO Electric FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 12A TO-3PB Original PDF

    2SK420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k4207

    Abstract: 2SK4207 SC-65
    Text: 2SK4207 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK4207 ○ スイッチングレギュレータ用 単位: mm 順方向伝達アドミタンスが高い。 : |Yfs| = 11 S (標準) • 漏れ電流が低い。 •


    Original     		PDF 2SK4207 k4207 2SK4207 SC-65

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK4206G

    K4207

    Abstract: No abstract text available
    Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK4207 K4207

    K4208

    Abstract: 2sk4208 2SK420
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ


    Original     		PDF 2002/95/EC) 2SK4208 O-220D-A1 K4208 2sk4208 2SK420

    2SK4201

    Abstract: 2SK4201-S19 2SK42
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 2SK4201-S19 2SK42

    2SK4200

    Abstract: K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333
    Text: 2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4200LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4200LS ENA1333 A1333-5/5 2SK4200 K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333

    a1290

    Abstract: K4204 2SK4204 2SK42 2SK4204LS ENA1290
    Text: 2SK4204LS Ordering number : ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4204LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK4204LS ENA1290 PW10s, A1290-5/5 a1290 K4204 2SK4204 2SK42 2SK4204LS ENA1290

    2SK4206

    Abstract: Marking code 9H 2SK4206G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK4206G 2SK4206 Marking code 9H 2SK4206G

    K4208

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ


    Original     		PDF 2002/95/EC) 2SK4208 O-220D-A1 K4208

    2sk4202

    Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42

    A1516

    Abstract: 2SK4209 A-1516 2SK42 k420
    Text: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.


    Original     		PDF 2SK4209 ENA1516 PW10s, A1516-5/5 A1516 2SK4209 A-1516 2SK42 k420

    A1289

    Abstract: A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203
    Text: 2SK4203LS Ordering number : ENA1289 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4203LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK4203LS ENA1289 PW10s, A1289-5/5 A1289 A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203

    Untitled

    Abstract: No abstract text available
    Text: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.


    Original     		PDF 2SK4209 ENA1516 A1516-5/5

    2SK4206

    Abstract: u265
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SK4206 2SK4206 u265

    2SK4207

    Abstract: No abstract text available
    Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK4207 2SK4207

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SK4206

    2SK4206

    Abstract: 2SK4206G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK4206G 2SK4206 2SK4206G

    k4202

    Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 k4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS

    2SK4206

    Abstract: 2SK42
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK4206 2SK4206 2SK42

    K4208

    Abstract: 2SK4208 2SK420 2SK42
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ


    Original     		PDF 2002/95/EC) 2SK4208 O-220D-A1 K4208 2SK4208 2SK420 2SK42

    K4207

    Abstract: 2SK4207 SC-65
    Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK4207 K4207 2SK4207 SC-65

    2sk4206g

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SK4206G 2sk4206g

    2SK425

    Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
    Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL


    OCR Scan     		PDF 2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433

    dc-dc converter hitachi

    Abstract: 2SK429 kl diode 2SK42 Hitachi Scans-001 b205
    Text: b lE D • 4 ^ 1 ,2 0 5 G G ia O b ? ÔS5 ■ H IT M 2SK420 L ,2SK429CSj— H I T A C H I / (O P T O E L E C T R O N IC S ) SILIC O N N -C H A N N E L M O S FET -.4 F P = n m 1t j c~: Li l ■ Type Type HIGH SPEED POWER S W IT C H IN G HIG H F R E Q U E N C Y POWER AMPLIFIER


    OCR Scan     		PDF 2SK429Ã dc-dc converter hitachi 2SK429 kl diode 2SK42 Hitachi Scans-001 b205