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    TRANSISTOR K 3911 Search Results

    TRANSISTOR K 3911 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 3911 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2222A transistor

    Abstract: 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013
    Text: Dec. 2001 VER. 1.00 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 VER. 1.00 Published by MCU Application Team in MagnaChip Semiconductor Ltd. Co., Ltd. MagnaChip Semiconductor Ltd. 2004 All Right Reserved. ⓒ Additional information of this manual may be served by MagnaChip Semiconductor Ltd. Offices in


    Original     		PDF HMS38112/39112 HMS38112 HMS39112 27c256 2222A transistor 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013

    2222A transistor

    Abstract: MARKING HYNIX hynix naming IR REMOTE Hynix 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013
    Text: Dec. 2001 VER. 1.00 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 VER. 1.00 Published by MCU Application Team in HYNIX Semiconductor Inc. Co., Ltd.


    Original     		PDF HMS38112/39112 HMS38112 HMS39112 27c256 2222A transistor MARKING HYNIX hynix naming IR REMOTE Hynix 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013

    transistor ld3

    Abstract: 2SK703 T500
    Text: N E C ELECTRONICS INC Tfl DE | t,4E7525 OQlñññM T |~884 D T - 3 ?• : '¡ ^ 7 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK703 D E S C R IP T IO N The 2 S K 7 0 3 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, m otor and lamp driver.


    OCR Scan     		PDF b427555 2SK703 2SK703 T-39-11 transistor ld3 T500

    BUK426-1000A

    Abstract: BUK426-1000B BUK426-100
    Text: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION


    OCR Scan     		PDF BUK426-1OOOA/B 711002b BUK426 -1000A -1000B -SOT199 T-39-11 K426-10OOA/B BUK426-1000A BUK426-1000B BUK426-100

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF bbS3131 00E0S7Q BUK427-450B 427-450B

    MPA92

    Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
    Text: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF TBLF245 OT123 -SOT123 711002b BLF245 T-39-11 7110fl2b MPA92 68W* transistor 68w transistor SOT123 Package BH RV transistor International Power Sources P101 sot123 GZ22

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE ObE D PowerMOS transistor • bbSB^l 0014535 T ■ “ BUZ78 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ78 BUZ78_ D01454Q T-39-11

    Untitled

    Abstract: No abstract text available
    Text: BUZ74A PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • bfc.53131 0014514 5 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ74A BUZ74A_ T-39-1I bbS3T31 T-39-11

    blf544b

    Abstract: 015 capacitor philips 74649 BH RV transistor PHILIP RESISTOR 2322
    Text: Philip« Sem iconductors Product »pacification UHF push-pull power MOS transistor PHILIPS T - 3^ - /I INTERNATIONAL SbE T> • BLF544B 71100Bb OOMBTflS 177 B I P H I N PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


    OCR Scan     		PDF 7110flBb OT268 OT268 BLF544B blf544b 015 capacitor philips 74649 BH RV transistor PHILIP RESISTOR 2322

    transistor ZA 16

    Abstract: BUZ11 IEC134 T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E QbE d PowerMOS transistor • b 353^31 D o m 3 aa 1 " BUZ11 r - 3 ^ 1! May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF DD143fifl T-39-11 transistor ZA 16 BUZ11 IEC134 T0220AB

    BUZ83A

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF BUZ83A 7Z8388S bbS3T31 T-S9-11 BUZ83A

    BUZ90A

    Abstract: No abstract text available
    Text: _!_PowerMQS transistor_ BUZ90A^ N AMER PHILIPS/DISCRETE QbE D • ^53*131 0014556 2 ■ r - 3 9 - i/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUZ90A^ T-39-11 0D14S3a BUZ90A bbS3131 0Q14534 BUZ90A

    BUZ50C

    Abstract: T0220AB
    Text: PowerMQS transistor N AUER PHILIPS/DISCRETE BUZ50C OLE D • [^53^31 0014570 1 ■ " T -3 1 -1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BIIZ50C T0220AB; BUZ50C BUZ50C T0220AB

    BUZ73

    Abstract: K 3911 transistor "" transistor T0220AB
    Text: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ73 T0220AB; D0144b3 BUZ73 T-39-11 K 3911 transistor "" transistor T0220AB

    BUZ10

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 BUZ10 D0143flb T-39-11 7Z21184 BUZ10_ BUZ10

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_BUZ90_ N AMER PHILIPS/DISCRETE OLE D • bb53131 0Q14S51 T ■ T -3 < p ii May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUZ90_ bb53131 0Q14S51 BUZ90 bb53T31 T-39-11 T-39-11-

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 |j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbS3T31 DD144D2 bb53T31 BUZ71 T-39-11 00144D7 BUZ71_

    BUZ78

    Abstract: T0-220AB transistor a7j T0220AB transistor 800V 1A
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor □LE • d “ GomsBs B U Z 78 ■ t ” T - 3 1 -1 1 May 1987 g e n e r a l d e s c r ip t io n N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 0G14S35 BUZ78 BUZ78_ BUZ78 T0-220AB transistor a7j T0220AB transistor 800V 1A

    K 3911

    Abstract: transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35
    Text: PowerMOS transistor_ N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,


    OCR Scan     		PDF BUZ11A 001431S T-39-11 T0220AB; 7Z21186 K 3911 transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35

    Transistor Bo 17

    Abstract: BUK426-50A BUK426-60A BUK426-60B PINNING-SOT199
    Text: PHILI PS INTERNATIONAL 5L.E T> 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 BUK426-60A/B 7^39-t/ PowerMOS transistor Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK426-50A/B G0N4115 K426-60A/B PINNING-SOT199 BUK426 Transistor Bo 17 BUK426-50A BUK426-60A BUK426-60B

    BUZ21

    Abstract: No abstract text available
    Text: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUZ21 BUZ21_ 00144ES T-39-11 Y-39-11 BUZ21

    BUK451-100A

    Abstract: K451 BUK451-100B T0220AB transistor 513
    Text: -7^ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK451-100A/B 7110fl2b BUK451 -100A -100B T0220AB T-39-11 711082t BUK451-100A K451 BUK451-100B transistor 513

    C4171

    Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10
    Text: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s


    OCR Scan     		PDF MJ6308/D MJ6308 2N6308 2N6308 MJ6308 C4171 MCI455 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 AM503 MJ16006 MTP8P10

    500c t2

    Abstract: BUK627-500A BUK627-500B BUK627-500C
    Text: N AMER P H I L I P S / D I S C R E T E SSE D m ^53*131 GD2Gbba PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF bb53131 BUK627-500A BUK627-500B BUK627-500C -r-37- BUK627 -500A -500B -500C 500c t2