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    TRANSISTOR J8 Search Results

    TRANSISTOR J8 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    BLW81

    Abstract: transistor rf m 1104
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


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    PDF BLW81 BLW81 transistor rf m 1104

    Untitled

    Abstract: No abstract text available
    Text: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN1967CT RN1969CT RN1968CT RN2967CT RN2969CT RN1968CT RN1967CT

    Untitled

    Abstract: No abstract text available
    Text: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN1967CT RN1969CT RN1968CT RN2967CT RN2969CT

    PVB42004X

    Abstract: SC15 sot445
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


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    PDF PVB42004X OT445A SCA53 127147/00/02/pp8 PVB42004X SC15 sot445

    diode BY239

    Abstract: BD239 BY239 LLE16045X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    PDF LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X

    Philips 2222-030

    Abstract: philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain


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    PDF BLF543 SC08b MBB072 MBA931 OT171 Philips 2222-030 philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14

    SOT123 Package

    Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain


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    PDF BLF145 SC08a OT123 SOT123 Package enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table

    transistor SOT23 J8

    Abstract: transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23


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    PDF S9018 200mW) OT-23 BL/SSSTC085 transistor SOT23 J8 transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23

    S9018W

    Abstract: s9018 transistor S9018 transistor SOT J8 S9018 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018W Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-323


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    PDF S9018W 200mW) OT-323 S9018 BL/SSSTF060 S9018W s9018 transistor S9018 transistor SOT J8 S9018 transistor

    enamelled copper wire tables

    Abstract: BLF145 J146 J-146
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage


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    PDF BLF145 OT123 MBB072 enamelled copper wire tables BLF145 J146 J-146

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


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    PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


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    PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


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    PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    SSB transmitter

    Abstract: 7540 Group BLF145
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF145 HF power MOS transistor Product specification Supersedes data of 1997 Dec 12 2003 Oct 13 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain


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    PDF M3D065 BLF145 OT123A SCA75 613524/03/pp15 SSB transmitter 7540 Group BLF145

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TV9018NND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)


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    PDF WBFBP-03B TV9018NND03 WBFBP-03B 400MHz

    LTE42012R

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency


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    PDF LTE42012R OT440A SCA53 127147/00/02/pp12 LTE42012R

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    c 3421 transistor

    Abstract: d 3421 transistor J802
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J802 High-Pow er NPN Silicon Transistor . . . lor use as an output device in complementary audio amplifiers to 100-Watts music power per channel. • • • 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS


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    PDF 100-Watts MJ4502 c 3421 transistor d 3421 transistor J802

    mj802

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA M J802 H igh-Pow er NPN Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR


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    PDF MJ802/D MJ4502 O-204AA mj802

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


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    PDF BUK565-100A

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931