transistor c 933
Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Text: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
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PHl819-33
Tl50M50A
AlC100A
transistor c 933
transistor j5
Transistor 933
13MM
transistor c 144
572 transistor
933 TRANSISTOR
30 w RF POWER TRANSISTOR NPN
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MJ 6810
Abstract: motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810
Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY40N60/D
MGY40N60
MGY40N60/D*
MJ 6810
motorola 6810
J 6810 D
MGY40N60
TRANSISTOR J 6810
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transistor MJ 122
Abstract: MGY40N60D
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
MGY40N60D/D*
TransistorMGY40N60D/D
transistor MJ 122
MGY40N60D
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str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
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2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
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TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
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MGY40N60
Abstract: motorola 6810
Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY40N60/D
MGY40N60
MGY40N60
motorola 6810
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motorola 6810
Abstract: MJ 6810 MGY40N60
Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY40N60/D
MGY40N60
motorola 6810
MJ 6810
MGY40N60
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2SC3584
Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for
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OOG144S
NE68100
NE68132
NE68133
NE68135
NE68137
NE68100,
NE68135.
NE681
2SC3584
ne3813
SC358
10r 236
NE AND "micro-X"
el3025
2SC3582
2SC3583
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2N5332
Abstract: No abstract text available
Text: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399
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2N5332
2N5399
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TIC 122 Transistor
Abstract: TIC 136 Transistor motorola mjl transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY40N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -264 40 A @ 90 C 66 A @ 25 C 600 VOLTS
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MGY40N60D
TIC 122 Transistor
TIC 136 Transistor
motorola mjl transistor
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GY40N60
Abstract: motorola 6810 GY40N
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is In su la te d G a te B ip o la r T ra n sisto r IG B T u ses an a dva n ce d
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GY40N60
GY40N60
motorola 6810
GY40N
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2N2988
Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990
Text: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA
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2N2987
2N2994
2N2991
2N2988
2N2967
2N2989
2N2993
2N2991
EL 2n25
2N25
2N2990
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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GY40N60D
Abstract: Y40N60D GY40N60 IC IGBT fast GY40N
Text: MOTOROLA O rder this docum ent by M G Y40N60D /D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY40N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4
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Y40N60D
GY40N60D
GY40N60
IC IGBT fast
GY40N
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DSAIH00025320
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages "0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
DSAIH00025320
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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HD25/HD
HMCS40
HL8314E"
HL8312
HL8311
HLP1000
HL7802
HL7801
HL1221
HLP5000
HA 12058
HA12047
HA12038
ha12058
17812P
HA 12046
HA12026
HA12045
17815P
17808P
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SN72710L
Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4
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LH0002C
LH0002CN
NH0005C
DAC08CZ
NH0014C
DH0034
78M12HC
MMH0026CG
79M12AHC
75460BP
SN72710L
MC1013P
MC680P
796HC
mc1235l
MC838P
MC814G
MC1670L
723HC
741hm
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melcher H1000
Abstract: No abstract text available
Text: H-Family DC-DC Converters <100 W 50 W DC-DC Converters Benign Environment H-Family Single output: series 12H/24H/48H1000 Dual output: series 12H/24H/48H2000 Triple output: series 12H/24H/48H3000 • Wide input voltage range suitable for battery opera tion
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12H/24H/48H1000
12H/24H/48H2000
12H/24H/48H3000
melcher H1000
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PH smd transistor PH
Abstract: diode for clippers BKC Semiconductors DSAIH0002541 LR1 transistor
Text: SMD SOT-23 Plastic Use Advantages Switching Diode —0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
100pA
PH smd transistor PH
diode for clippers
BKC Semiconductors
DSAIH0002541
LR1 transistor
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smd transistor LR
Abstract: smd transistor 3U DSAIH0002561
Text: SMD SOT-23 Plastic Switching Diode Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
smd transistor LR
smd transistor 3U
DSAIH0002561
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Y8101
Abstract: Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual
Text: 8010A/8012A Digital Multimeters Instruction Manual FLUKE 8010A/8012A Digital Multimeters Instruction Manual P/N 491944 August 1978 Rev 2 1/85 1985, John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A. IF L U K E I - — ® Dear Customer: Congratulations! We at Fluke are proud to present you with the 8010A and
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010A/8012A
012A-1701
012A-1101
Y8101
Fluke 179 Multimeter circuit diagram
FLUKE 79 series II multimeter diagram
Fluke 19 Multimeter circuit diagram
fluke 8012A
fluke Y8101
FLUKE Clamp meter diagram
FLUKE 8010a rms dc converter
FLUKE 30 Clamp meter diagram
FLUKE 79 III manual
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NE567N
Abstract: tone decoder ne567 Signetics NE567 SE567D NE567
Text: Philips S e m ico n d u cto rs-S ig n e tlcs Linear Products Product specification Tone decoder/phase-locked loop NE/SE567 DESCRIPTION FEATURES The NE/SE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power
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NE/SE567
NE567
SE567
500kHz)
24-Lead
26-Lead
22-Lead
NE567N
tone decoder ne567
Signetics NE567
SE567D
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