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    TRANSISTOR J 6810 Search Results

    TRANSISTOR J 6810 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J 6810 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor c 933

    Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
    Text: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System


    Original     		PHl819-33 Tl50M50A AlC100A transistor c 933 transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN PDF

    MJ 6810

    Abstract: motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810
    Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY40N60/D MGY40N60 MGY40N60/D* MJ 6810 motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810 PDF

    transistor MJ 122

    Abstract: MGY40N60D
    Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY40N60D/D MGY40N60D MGY40N60D/D* TransistorMGY40N60D/D transistor MJ 122 MGY40N60D PDF

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703 PDF

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC PDF

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor PDF

    MGY40N60

    Abstract: motorola 6810
    Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY40N60/D MGY40N60 MGY40N60 motorola 6810 PDF

    motorola 6810

    Abstract: MJ 6810 MGY40N60
    Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY40N60/D MGY40N60 motorola 6810 MJ 6810 MGY40N60 PDF

    2SC3584

    Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
    Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for


    OCR Scan     		OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583 PDF

    2N5332

    Abstract: No abstract text available
    Text: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399


    OCR Scan     		2N5332 2N5399 PDF

    TIC 122 Transistor

    Abstract: TIC 136 Transistor motorola mjl transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY40N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -264 40 A @ 90 C 66 A @ 25 C 600 VOLTS


    OCR Scan     		MGY40N60D TIC 122 Transistor TIC 136 Transistor motorola mjl transistor PDF

    GY40N60

    Abstract: motorola 6810 GY40N
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is In su la te d G a te B ip o la r T ra n sisto r IG B T u ses an a dva n ce d


    OCR Scan     		GY40N60 GY40N60 motorola 6810 GY40N PDF

    2N2988

    Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990
    Text: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA


    OCR Scan     		2N2987 2N2994 2N2991 2N2988 2N2967 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    GY40N60D

    Abstract: Y40N60D GY40N60 IC IGBT fast GY40N
    Text: MOTOROLA O rder this docum ent by M G Y40N60D /D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY40N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4


    OCR Scan     		Y40N60D GY40N60D GY40N60 IC IGBT fast GY40N PDF

    DSAIH00025320

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages "0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		OT-23 DSAIH00025320 PDF

    HA 12058

    Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
    Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION


    OCR Scan     		HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P PDF

    SN72710L

    Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
    Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4


    OCR Scan     		LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034 78M12HC MMH0026CG 79M12AHC 75460BP SN72710L MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm PDF

    melcher H1000

    Abstract: No abstract text available
    Text: H-Family DC-DC Converters <100 W 50 W DC-DC Converters Benign Environment H-Family Single output: series 12H/24H/48H1000 Dual output: series 12H/24H/48H2000 Triple output: series 12H/24H/48H3000 • Wide input voltage range suitable for battery opera­ tion


    OCR Scan     		12H/24H/48H1000 12H/24H/48H2000 12H/24H/48H3000 melcher H1000 PDF

    PH smd transistor PH

    Abstract: diode for clippers BKC Semiconductors DSAIH0002541 LR1 transistor
    Text: SMD SOT-23 Plastic Use Advantages Switching Diode —0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		OT-23 100pA PH smd transistor PH diode for clippers BKC Semiconductors DSAIH0002541 LR1 transistor PDF

    smd transistor LR

    Abstract: smd transistor 3U DSAIH0002561
    Text: SMD SOT-23 Plastic Switching Diode Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		OT-23 smd transistor LR smd transistor 3U DSAIH0002561 PDF

    Y8101

    Abstract: Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual
    Text: 8010A/8012A Digital Multimeters Instruction Manual FLUKE 8010A/8012A Digital Multimeters Instruction Manual P/N 491944 August 1978 Rev 2 1/85 1985, John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A. IF L U K E I - — ® Dear Customer: Congratulations! We at Fluke are proud to present you with the 8010A and


    OCR Scan     		010A/8012A 012A-1701 012A-1101 Y8101 Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual PDF

    NE567N

    Abstract: tone decoder ne567 Signetics NE567 SE567D NE567
    Text: Philips S e m ico n d u cto rs-S ig n e tlcs Linear Products Product specification Tone decoder/phase-locked loop NE/SE567 DESCRIPTION FEATURES The NE/SE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power


    OCR Scan     		NE/SE567 NE567 SE567 500kHz) 24-Lead 26-Lead 22-Lead NE567N tone decoder ne567 Signetics NE567 SE567D PDF