Untitled
Abstract: No abstract text available
Text: HL8312E-Laser Diode Description H L 8 3 1 2 E is a h ig h -p o w e r 0 .8 iin G a A IA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le as a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip
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HL8312E---------------Laser
HL8312E
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HE8813VG
Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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HL8312E/G
HL8312E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8813VG
HE8403
HE8807SG
HE8811
HL8312E
HL8312G
HE84-03
Hitachi Scans-001
HE8807
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Untitled
Abstract: No abstract text available
Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^ 2 0 5 G0120b7 «Him -4 1 - o s The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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HL8312E/G
G0120b7
HL8312E/G
44Tfei5D5
001E070
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Untitled
Abstract: No abstract text available
Text: HL8312G Laser Diode Description H L 8 3 1 2 G is a high-pow er 0.8 iin G aA IA s laser d io d e with d o u b le h etero ju n ctio n structure. It is su itab le as a light source in optical disc m em o rie s and v arious o th e r types o f optical equip
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HL8312G
HL8312G
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HL7801
Abstract: HL7806
Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).
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HL7801
Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838
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HL671IG
HL671I
HL7801
HL7802
HL7806
HL7831
HL7832
HL7836
HL7838
HL83H
HE8807CL
HL7801E
HL1324MF
HL83M
HE8812
hitachi he1301
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free transistor equivalent book 2sc
Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example
Text: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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HD25/HD
HMCS40
HL8314E"
HL8312
HL8311
HLP1000
HL7802
HL7801
HL1221
HLP5000
HA 12058
HA12047
HA12038
ha12058
17812P
HA 12046
HA12026
HA12045
17815P
17808P
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