TRANSISTOR GY 123 Search Results

TRANSISTOR GY 123 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR GY 123 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N7002 NXP MARKING Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and	Original	OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF	PDF
UA30CLD35NPTR Abstract: No abstract text available Text: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable	Original		PDF
SMD transistor UY Abstract: smd optocoupler cop 200 transistor irf 630 transistor smd CR gy 615 smd 152,GY CR50TEA dual led 660 940 red infrared smd transistor GY smd rgb Text: LIGHT EMITTING CHARACTERISTICS ELCOS GmbH, well known as the first manufacturer of SMD components in Optoelectronics, has now completed it’s portfolio from the smallest single colour-package the CERLED onto the “semicustom” multichip package (the EUROLED). Regarding Standard Products the policy of ceramic substrates and moulded encapsulation gave the	Original		PDF
VTBN6GRQ Abstract: No abstract text available Text: VTB Pick-to-Light Optical Touch Button Ergonomic optical touch button for pick-to-light applications • Microcontroller-based photoelectric touch buttons • A cost-effective and easy-to-install alternative to capacitive touch switches and mechanical push buttons for errorproofing and parts-verification applications	Original		PDF
wiring diagram to hold contactor with NO, NC Abstract: UA30CLD35NPTR UA30CLD sp 1235 UA18CLD20PPTR UA18CLD05NPM1TR UA18CLD05NPTR UA18CL UA18CLD05PPTR UA18CLD08NPM1TR Text: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable	Original		PDF
circuit diagram wireless spy camera Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint	Original	DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143	PDF
SGS ISOWATT221 Abstract: STP3N50XI D556 ISOWATT221 Text: • OOMLilbb MÖ7 ■ S G T H _ _ rz7 sgs-ihomson Ä T f «[R3 M £Tr^MD S STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N50XI ■ . . ■ . Vdss RDS(on 500 V <4 n Id 1.7 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TEC HNO LO GY	OCR Scan	STP3N50XI STP3N50XI ISOWATT221 0G4hl75 SGS ISOWATT221 D556 ISOWATT221	PDF
ECG116 Abstract: ECG1287 ECG128 GV-30 Text: PHILIPS E C G INC 17E D • bbS3=iaô □ □□‘tfiflQ S s ' EGG ECG1287 Audio Power Amplifier S e m ic o n d u c to rs Features • Short circuit protection • Thermal shutdown 14 13 12 II 10 9 8 r i i —i n n i —n i l — . ,280" 7.ll MAX. i 1 2	OCR Scan	T-74-05-01 ECG1287 ECG116 ECG128 GV-30	PDF
diode BY 226 Abstract: QRC1113 diode 226 ST2178 Text: L5 0 p > n-r,r, » ^ , n , r j REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRC1113 DESCRIPTION PACKAGE DIMENSIONS .420 10.67 -» — .328 (8.33) (A ), .062 R NOM (K) .226 (5.74) i c - (E) (C ) f ^ .150 (3.81) .150 (3.81) NOM POINT OF OPTIMUM RESPONSE	OCR Scan	QRC1113 QRC1113 ST2178 diode BY 226 diode 226 ST2178	PDF
Untitled Abstract: No abstract text available Text: RF3375 I MICRO-DEVICES G E N E R A L P U R P O S E A M P L IF IE R • Basestation Applications Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks Final PA for Low-Power Applications • IF or RF Buffer Amplifiers High Reliability Applications	OCR Scan	RF3375 6000MHz RF337XPCBA-41XFully	PDF
c104 TRANSISTOR Abstract: c102 TRANSISTOR TRANSISTOR c104 HA1306W c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 HA1306 transistor c106 TRANSISTOR C103 Text: HA1306W 3.5W AUDIO POWER AMPLIFIER • FE A TU R E S • SRPP Circuit Shunt-regulated Push-Pull Circuit High Operating Stability on DC and AC • High Voltage Gain . 44dB typ. • Low Thermal Resistance. 1I0°C/W (maximum)	OCR Scan	HA1306W Ta-25T) -55IO Tc-65 Si-40 -44dB c104 TRANSISTOR c102 TRANSISTOR TRANSISTOR c104 HA1306W c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 HA1306 transistor c106 TRANSISTOR C103	PDF
Halbleiterbauelemente DDR Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs temperatur von 25 °C angegeben.	OCR Scan	6x10x12 Halbleiterbauelemente DDR Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C	PDF
TA7698AP Abstract: ta7698 gl 40-2t ekp 71 R407C toshiba chroma television Text: -'-Vv."- v i d e o - c h r o m a -d e f l e c t i o n Unit: mm system FOR A COLOR TELEVISION PAL, NTSC The TA7698AP combines a PAL/NTSC VideoChroma subsystem and a Deflection combination on a single monolithic integrated circuit to provide a PAL or PAL/NTSC color television.	OCR Scan	TA7698AP TA7698AP 66IMOUVUacJUaO dV869Z ta7698 gl 40-2t ekp 71 R407C toshiba chroma television	PDF
2N6679 Abstract: transistor GY 123 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N6679 NPN S ilic o n High Fre q u e n cy T ra n sisto r . . . designed fo r use in h igh-frequency, sm all-sign a l, n a rro w and w id e b a n d a m p lifie rs. Ideal fo r use in m ic ro s trip th in and th ick film applications.	OCR Scan	2N6679 IL-S-19500 MIL-STD-750/883 IS12I 2N6679 transistor GY 123	PDF

Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor	OCR Scan	RZ1214B65Y 127147/00/02/pp8	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor	OCR Scan	RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor	OCR Scan	RX1214B170W 7/00/02/pp12	PDF
APT45G100BN Abstract: No abstract text available Text: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 01 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS	OCR Scan	APT45G100BN O-247AD	PDF
TDA3562A Abstract: No abstract text available Text: INTEGRATED CIRCUITS TDA3566A PAL/NTSC decoder Product specification Supersedes data of March 1991 File under Integrated Circuits, IC02 February 1994 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PAL/NTSC decoder TDA3566A	OCR Scan	TDA3566A SCD28 TDA3562A	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification	OCR Scan	PDTC123JE SC-75 115104/00/02/pp8	PDF
PC5004 Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz	OCR Scan	55-micron PC5004 VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor	OCR Scan	RZ1214B35Y 127147/00/02/pp8	PDF
TRANSISTOR 132-gd Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n	OCR Scan	06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes	PDF
AGP 9805 Abstract: transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139 Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Jan 08 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1997 Oct 14 PHILIPS Philips Semiconductors Product specification	OCR Scan	BLV862 SC08a 127047/00/04/pp12 AGP 9805 transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139	PDF

TRANSISTOR GY 123 Search Results

TRANSISTOR GY 123 Result Highlights (5)

TRANSISTOR GY 123 Datasheets Context Search

2N7002 NXP MARKING

UA30CLD35NPTR

SMD transistor UY

VTBN6GRQ

wiring diagram to hold contactor with NO, NC

circuit diagram wireless spy camera

SGS ISOWATT221

ECG116

diode BY 226

Untitled

c104 TRANSISTOR

Halbleiterbauelemente DDR

TA7698AP

2N6679

Untitled

Untitled

Untitled

APT45G100BN

TDA3562A

Untitled

PC5004

Untitled

TRANSISTOR 132-gd

AGP 9805