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    2N6679 Price and Stock

    Hewlett Packard Co HXTR-2101

    GENERAL PURPOSE TRANSISTOR (Also Known As: 2N6679)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HXTR-2101 2
    • 1 $45.5
    • 10 $45.5
    • 100 $45.5
    • 1000 $45.5
    • 10000 $45.5
    		Buy Now

    2N6679 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6679 Hewlett-Packard General Purpose Transistors Scan PDF
    2N6679 Hewlett-Packard Diode and Transistor Data Book 1980 Scan PDF
    2N6679 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6679 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6679 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2N6679 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    2N6679

    Abstract: HPAC-100 HPAC HXTR-2101
    Text: COMPONENTS 2N6679 HXTR-2101 Features HIGH GAIN 10.5 dB Typical at 4 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE BIPOLAR TRANSISTORS GENERAL PURPOSE TRANSISTOR H E W L E T T P AC KARD G Description The 2N6679 (HXTR-2101) is an NPN bipolar transistor designed fo r high gain and o utp ut power at 4 GHz. The


    OCR Scan     		PDF 2N6679 HXTR-2101) 2N6679 HPAC-100, MIL-S-19500 HPAC-100 HPAC HXTR-2101

    Untitled

    Abstract: No abstract text available
    Text: m 2N6679 \ \ SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 02,65 m ax - s :!'4" '- MAXIMUM RATINGS 1,1 lc 70 mA V ce 20 V P diss 900 mW @ Tc = 87 °C


    OCR Scan     		PDF 2N6679 OT-100 2N6679

    2N6679

    Abstract: sot100 70MA20 SOT-100
    Text: 2N6679 SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 70 mA 20 V P d is s 900 mW @ Te %87 0C o Ie < m MAXIMUM RATINGS Tj -65 °C to +200 0C Tstg -65 0C to +200 0C


    OCR Scan     		PDF 2N6679 OT-100 sot100 70MA20 SOT-100

    2N6679

    Abstract: transistor GY 123
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N6679 NPN S ilic o n High Fre q u e n cy T ra n sisto r . . . designed fo r use in h igh-frequency, sm all-sign a l, n a rro w and w id e b a n d a m p lifie rs. Ideal fo r use in m ic ro s trip th in and th ick film applications.


    OCR Scan     		PDF 2N6679 IL-S-19500 MIL-STD-750/883 IS12I 2N6679 transistor GY 123

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    PT 2102 ic

    Abstract: 2N6679 HXTR-2101TXV HXTR-4101 HPAC-70GT HXTR-6106 6105T HXTR-2101 HXTR-6105 HXTR-2001
    Text: HEWLETT-PACKARD-. CMPNTS EOE t C3 M4M7SflM 0005512 2 □ 181 t S S ä S General Purpose Transistors HXTR-2001 Chip Technical Data • High Gain 11 dB Typical at 4 GHz • Low Noise Figure 3.8 dB Typical at 4 GHz • High O utput Pow er 20 dBm Typical PldB at


    OCR Scan     		PDF 44475A4 Q0551S HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, at-2102 PT 2102 ic 2N6679 HXTR-2101TXV HXTR-4101 HPAC-70GT HXTR-6106 6105T HXTR-2101 HXTR-6105

    PT 2102 ic

    Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003
    Text: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under


    OCR Scan     		PDF HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, HXTR-6106 MIL-S-19500, PT 2102 ic HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003