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    HG73C

    Abstract: PV30A PV50B tt 2222 Datasheet E7000 SH7708 E1149 PV30B ditest Hitachi DSA00197
    Text: ADJ-606-047 日立セルベース IC HG73C,HG75C デザインマニュアル HG73C,HG75C シリーズデザインマニュアル 発行年月日 平成 12 年 3 月 第 1 版 発行 株式会社 日立製作所 半導体グループ電子統括営業本部


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    ADJ-606-047 HG73C HG75C OH-200 Ta25f1MHz PV30A PV50B tt 2222 Datasheet E7000 SH7708 E1149 PV30B ditest Hitachi DSA00197 PDF

    full subtractor using NOR gate for circuit diagram

    Abstract: full subtractor circuit using nor gates AX277 2 bit full adder SIGNAL PATH DESIGNER full subtractor circuit using nand gate
    Text: VITESSE SEMICONDUCT OR 30E D H '1502331 GODDeTb 5 * V T S T -M -H ! Features • VLSI Complexity: > 35,000 Gates •Very Low Power Disspation • Superior Performance: 300M Hz to 3 GHz ■High Yielding, 4 Layer Metal, VLSI Process • Choice of Operating Temperature Ranges:


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    VCB50K Mil-Std-883C, full subtractor using NOR gate for circuit diagram full subtractor circuit using nor gates AX277 2 bit full adder SIGNAL PATH DESIGNER full subtractor circuit using nand gate PDF

    PC6015

    Abstract: No abstract text available
    Text: SI ERRA SEMI CONDUCTOR '»r SIERRA SEMICONDUCTOR ÇORP 47E ì> 0242010 0001724 T «SSC Semicustom Capability Analog, Digital and EEPROM combined on the same chip. Sierra is a leading supplier of m ixed-signal standard cell ASICs. The Com pany's unique Triple Technology process perm its the


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    PDF

    PT6005

    Abstract: VSC300
    Text: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith


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    32bfl VSC300 PT6005 PDF

    HP83000

    Abstract: Electro SEX X81D1 HP8300 X41D ECL IC NAND
    Text: • 7 Ô1 1 D 7 3 O G lb a ^ O Tas B R K Iil Cyclone Series Cyclone Series GaAs Gate Arrays Rockwell Introduction The sub-micron Cyclone Series™ of GaAs gate arrays from Rockwell represent the culmination of over ten years of research and development.


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    PDF

    T6004

    Abstract: PT6005
    Text: S7E D HARRIS S E M I C O N D SE CT OR Bl 4302671 DDlböDS b 1 HAS CGA200 Seríes Advance Information Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate Array Series Features: • C ontin uou s Gate architectu re offers m axim um layou t e fficie ncy w ith 30% gate u tilizatio n fo r random logic


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    CGA200 21-pF T6004 PT6005 PDF

    R/CHN 041 diode

    Abstract: No abstract text available
    Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


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    VGT300 R/CHN 041 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: High-Reliability ASICs CGA100 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series


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    CGA100 TheGE/RCACGA100Series PC7T11-3 PC7C01-3 PC7C11-3 PC7S01-3 PC7S11-3 PDF

    VLSI Technology

    Abstract: kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification VGT300 "VLSI Technology Inc." PT6055 GAH 521 fabrimex
    Text: V L S I T ec h n o lo g y , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES s • Advanced f.O microp/fdrawn silicon gate'techrrology • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


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    VGT300 VLSI Technology kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification "VLSI Technology Inc." PT6055 GAH 521 fabrimex PDF

    CGA10-016

    Abstract: No abstract text available
    Text: . H Ig h -R riia b illty A S IC s CGA10 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. Continuous Gate* Technology 2-Micron CMOS Gate-Array Series


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    CGA10 CGA10-016 PDF

    RS flip flop cmos

    Abstract: full subtractor circuit using nor gates PC7001 subtractor using TTL CMOS full subtractor circuit using and gates RCA 528 CGA100-121 PC7003 AD01D1 CGA100
    Text: High-Retiability ASICs CGA100 Series These data sheets are provided fo r technical guidance only. The "final device perform ance may vary depending upon the final device design and configuration. Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series


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    CGA100 PC7C01-3 PC7C11-3 PC7S01-3 PC7S11-3 RS flip flop cmos full subtractor circuit using nor gates PC7001 subtractor using TTL CMOS full subtractor circuit using and gates RCA 528 CGA100-121 PC7003 AD01D1 PDF

    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005
    Text: VLSI T e c h n o l o g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • A vaila b le in th irte e n sizes from 960 to 54,000 usable gates The V G T 200 Series is an advanced, high performance C M O S gate array


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    VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005 PDF

    PC5004

    Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
    Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz


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    55-micron PC5004 VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding PDF

    Kt 0912

    Abstract: full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968
    Text: V L SI Technology, inc . PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES 7 FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates (12,149 to 66,550 available gates The VGT100 Series is an advanced,


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    VGT100 100-063-A-23-096 Kt 0912 full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968 PDF

    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram
    Text: V L S I Technology , in c PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates 12,149 to 66,550 available gates The VGT100 Series is an advanced,


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    VGT100 100-063-A-23-096 full subtractor circuit using decoder and nand ga full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram PDF

    ND02D1

    Abstract: pc7004 PC7001
    Text: HARRIS SEMICOND SECTOR 37E D 4305271 G024S75 S • HAS 'TA'L- H-OR Application Specific iCs C G A 1 00 Series Advance Information Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series Features: ■ Continuous Gate architecture offers maximum layout


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    G024S75 CGA100 B--03 ND02D1 pc7004 PC7001 PDF

    Transistor ge 718

    Abstract: IN01D3 CGA10-016
    Text: HA RR IS SEflICOND S E C T O R ^ 3 ? E D 4 3 0 5 27 1 O G S M S b S Application Specific /Cs ö «HAS CGA10 Series Advance Information Continuous Gate* Technology 2-Micron CMOS Gate-Array Series Features: • Continuous Gate architecture offers maximum layout


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    CGA10 Transistor ge 718 IN01D3 CGA10-016 PDF

    Arm processor vlsi technology

    Abstract: PC302 QFP 128 bonding
    Text: VLSI T e ch n o lo g y o.5-m ic r o n in c. _ PRELIMINARY ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.5-micron 0.45-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec


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    45-micron Arm processor vlsi technology PC302 QFP 128 bonding PDF

    full subtractor circuit using nand gates

    Abstract: pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5
    Text: s I TECHNOLOGY INC IflE =1300347 00032^2 1 • V LSI T e c h n o lo g y , in c. T~ 42-ll-C^ VAAST-INTELLIGENCE VGT200M SERIES GOVERNMENT PRODUCTS DIVISION CONTINUOUS GATE™ TECHNOLOGY Î3-M IC R 0N GATE ARRAY SERIES DESCRIPTION FEATURES Extensive Portable retargetable


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    VGT200M full subtractor circuit using nand gates pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5 PDF

    VGT200

    Abstract: full subtractor circuit using decoder and nand ga
    Text: VLSI T ec h n o lo g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in thirteen sizes from 960 to 54,000 usable gates The VGT200 Series is an advanced, high performance CMOS gate array


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    VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga PDF

    CGA10

    Abstract: No abstract text available
    Text: G E SOLID STATE 17E D 3075001 OGSSTa? 4 • 'T Application Specific iCs ’- M T . - U ~ 0 °\ CGA10 Series Advance Information Continuous Gate* Technology 2-Micron CMOS Gate-Array Series Features: ■ C ontinuous Gafe architecture offers m axim um la yo u t


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    CGA10 PDF

    PT6045

    Abstract: pt6021 PT6042 PC6013 PC6043 PC6015 pt6011 PC6D10 PC6001 pc6021
    Text: 1.5ji ANALOG CELL LIBRARY • All cells have power down mode where appropriate. • All analog specifications are typical, 5 V, 25°C, and use a single 5 V supply, unless otherwise indicated. ANALOG-TO-DIGITAL CONVERTERS CELL NAME ADC4BT ADC10B ADC12B HADC8B


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    ADC10B ADC12B 10-Bit 12-Bit DAC10B 17utput PT6045 pt6021 PT6042 PC6013 PC6043 PC6015 pt6011 PC6D10 PC6001 pc6021 PDF

    Untitled

    Abstract: No abstract text available
    Text: - High-Reliability ASICs CGA10 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration.


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    CGA10 PDF

    full subtractor using NOR gate for circuit diagram

    Abstract: full subtractor implementation using NOR gate Structure of D flip-flop Flip flop JK cmos preset resistor 10k synchronous counter using 4 flip flip subtractor using TTL CMOS 1-Bit full adder full subtractor circuit nand gates CGA10-037
    Text: - High-Reliability ASICs CGA10 Series These data sheets are provided fo r technical guidance only. T he final device perform ance may vary depending upon the final device design and configuration.


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    CGA10 full subtractor using NOR gate for circuit diagram full subtractor implementation using NOR gate Structure of D flip-flop Flip flop JK cmos preset resistor 10k synchronous counter using 4 flip flip subtractor using TTL CMOS 1-Bit full adder full subtractor circuit nand gates CGA10-037 PDF