TRANSISTOR E3 Search Results

TRANSISTOR E3 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR E3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	PDF	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P
khb9D5N20P Abstract: khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	PDF	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb9D5N20P khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Untitled Abstract: No abstract text available Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily	Original	PDF	2N499
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
IPW65R660CFD Abstract: ipa65r Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.1, 2011-06-22 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD	Original	PDF	IPx65R660CFD IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD IPW65R660CFD ipa65r
65c6280 Abstract: IPA65R280C6 IPx65R280C6 MOSFET TRANSISTOR SMD MARKING CODE A1 to247 pcb footprint transistor 313 smd SMD MARKING CODE M3 IPP65R280C6 Diode SMD SJ 66A ipa65 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R280C6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R280C6, IPB65R280C6 IPI65R280C6, IPP65R280C6	Original	PDF	IPx65R280C6 IPA65R280C6, IPB65R280C6 IPI65R280C6, IPP65R280C6 IPW65R280C6 65c6280 IPA65R280C6 IPx65R280C6 MOSFET TRANSISTOR SMD MARKING CODE A1 to247 pcb footprint transistor 313 smd SMD MARKING CODE M3 IPP65R280C6 Diode SMD SJ 66A ipa65
2N5195 Abstract: 2N5192 Text: 2N5195  MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.	Original	PDF	2N5195 2N5195 OT-32 2N5192. OT-32 2N5192
PNP POWER TRANSISTOR SOT-32 Abstract: 2N5195 2N5192 Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.	Original	PDF	2N5195 2N5195 OT-32 2N5192. OT-32 PNP POWER TRANSISTOR SOT-32 2N5192
65E6280 Abstract: IPx65R280E6 JESD22 ipa65r Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.1, 2010-08-16 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPP65R280E6, IPW65R280E6 Description	Original	PDF	IPx65R280E6 IPA65R280E6, IPP65R280E6, IPW65R280E6 65E6280 IPx65R280E6 JESD22 ipa65r
6R099C6 Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6	Original	PDF	IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
TRANSISTOR SMD MARKING CODE 604 Abstract: 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.0, 2011-02-01 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD	Original	PDF	IPx65R660CFD IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD TRANSISTOR SMD MARKING CODE 604 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r
6r125c6 Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6	Original	PDF	IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 to247 pcb footprint JESD22
PNP POWER TRANSISTOR SOT-32 Abstract: 2N5195 transistor 2N5195 industrial linear ic data book 2N5192 Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.	Original	PDF	2N5195 2N5195 OT-32 2N5192. OT-32 PNP POWER TRANSISTOR SOT-32 transistor 2N5195 industrial linear ic data book 2N5192

MJE210 Abstract: TRANSISTOR B 834 Transistor 834 B 834 Y Text: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.	Original	PDF	MJE210 MJE210 OT-32 OT-32 TRANSISTOR B 834 Transistor 834 B 834 Y
BD234 Abstract: PNP POWER TRANSISTOR SOT-32 Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.	Original	PDF	BD234 BD234 OT-32 OT-32 PNP POWER TRANSISTOR SOT-32
Transistor 834 Abstract: MJE210 TRANSISTOR B 834 Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.	Original	PDF	MJE210 MJE210 OT-32 OT-32 Transistor 834 TRANSISTOR B 834
BD179 Abstract: No abstract text available Text: BD179  NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching	Original	PDF	BD179 BD179 OT-32 OT-32
carbon resistors Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor Text: N AMER PHILIPS/DISCRETE b^E ]> bb53i31 □ DSìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear	OCR Scan	PDF	e3lx13u 7Z77838 BLX13U BLX13C carbon resistors BLX13 philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
BLX92A Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	PDF	BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
FT1551 Abstract: FT2551 Text: FUJITSU MICROELECTRONICS 31E D E3 D01bbl2 b E3FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T ) technology. R E T devices are	OCR Scan	PDF	FT2551 FT1551, FT1551
Untitled Abstract: No abstract text available Text: Opto Semiconductors Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Vorläufige Daten/Preliminary Data t'- LO C \J cg 2o: e3 Emitter - t - î Sensor 1 Circuitry -o3 V 1o- -o4 GPX06992 C\J O	OCR Scan	PDF	GPX06992
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,	OCR Scan	PDF	BD179 BD179 OT-32 OT-32 O-126)
t125 switch Abstract: BUK437-600B Text: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	7110A2b BUK437-600B t125 switch BUK437-600B

TRANSISTOR E3 Search Results

TRANSISTOR E3 Result Highlights (6)

TRANSISTOR E3 Datasheets Context Search

MN1280

KIA78*pI

khb*9D5N20P

Untitled

oz960

IPW65R660CFD

65c6280

2N5195

PNP POWER TRANSISTOR SOT-32

65E6280

6R099C6

TRANSISTOR SMD MARKING CODE 604

6r125c6

PNP POWER TRANSISTOR SOT-32

MJE210

BD234

Transistor 834

BD179

carbon resistors

BLX92A

FT1551

Untitled

Untitled

t125 switch