TRANSISTOR D 659 Search Results

TRANSISTOR D 659 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 659 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor BUX Abstract: BUX10 bux THOMSON 4682 bux 10 Text: *BUX10 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR A N S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E % Preferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant 125 V 25 A	OCR Scan	CB-19 transistor BUX BUX10 bux THOMSON 4682 bux 10	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
J551 Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1 Text: .SAMSUNG SEM ICO NDUCTOR INC 14E D \| TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current	OCR Scan	MPSH20 T-31-Ã 100MHz J551 TS 4142 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1	PDF
BFX89 Abstract: case BFX89 transistor IR 652 P Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.	OCR Scan	bbS3T31 BFX89 7Z08812 7Z08857 7Z08814 T-37-15 7Z08815 BFX89 case BFX89 transistor IR 652 P	PDF
BFQ66 Abstract: transistor F 0552 transistor A 564 UBB303 SOT173 sot173x transistor K 1377 Text: Phil/psSem iconductors^^ • bbSBTBl 0031bDb blO H A P X Product specification NPN 8 GHz wideband transistor ^ ^ DESCRIPTIO N BFQ66 ' N AUER PHIL IPS/DISCRETE b^E D PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SO T173 and	OCR Scan	0031bDfc> BFQ66 OT173 OT173X OT173. OT173X. BFQ66 transistor F 0552 transistor A 564 UBB303 SOT173 sot173x transistor K 1377	PDF
613 GB 123 CT Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S	OCR Scan	uPA812T 2SC4227) /xPA812T 613 GB 123 CT	PDF
CA3103E Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183 Text: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays	OCR Scan	CA3146, CA3183 CA3146A, CA31B3A, CA3183* CA3146A CA3146 CA3103E ca3103 LVB 1.32 TA6103 CA3146E ca3183	PDF
an5296 Abstract: Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A Text: CA3146, CA3183 S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • • • • • The CA3146A, CA3146, CA3183A, and CA3183* are general purpose high voltage silicon n-p-n transistor arrays on a common monolithic substrate.	Original	CA3146, CA3183 CA3146A, CA3183A, CA3183* 120MHz CA3183, an5296 Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
NE68135 Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009 Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o	Original	NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009	PDF
transistor A 564 Abstract: transistor vc 548 3B 843 Transistor 2217S2 Text: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed	OCR Scan	OT173 BFQ66 711Dfl2b transistor A 564 transistor vc 548 3B 843 Transistor 2217S2	PDF
SOT173 Abstract: D-045 BFQ66 philips 586 K1HC k 219 transistor Text: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed	OCR Scan	BFQ66 OT173X. SOT173 D-045 BFQ66 philips 586 K1HC k 219 transistor	PDF

logos 4012B Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX	OCR Scan	TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA M CT2 M CT2E 6 -Pin D IP O p to is o la to r s Transistor Output Th e se d ev ices con sist o f a g a lliu m ars e n id e in fra re d e m ittin g d io d e o p tic a lly c o u p led to a m o n o lith ic silicon p h o to tra n s is to r d etector.	OCR Scan		PDF
ecn 3-Phase Motor Driver IC Abstract: BA6871 BA6871BS SDIP32 motor breaker gv2 Text: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-w ave, p se u d o -lin e a r m o to r driver suite d for VCR cap stan m otors. The IC has a torque ripple cancellation circuit to reduce w ow and flutter, and an output transistor saturation prevention circuit that	OCR Scan	BA6871BS BA6871BS ecn 3-Phase Motor Driver IC BA6871 SDIP32 motor breaker gv2	PDF
VDE0860 Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E Text: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.	OCR Scan	E54915 IEC380/VDE0806, IEC435 VDE0805, IEC65/VDE0860, VDE110b, IEC204//^ VDE0113, VDE0160, VDE0832, VDE0860 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E	PDF
STP3N60 Abstract: stp3n60xi ISOWATT221 Text: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION	OCR Scan	STP3N60XI ISOWATT221 GC24I60 CC24170 GC3S79Q STP3N60 stp3n60xi ISOWATT221	PDF
TIS43 Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.	OCR Scan	2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent	PDF
BT3904 Abstract: MBT3904T Text: To Lynn Murphy From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 08/18/97 09:22 03/08 Order this data sheet by M M BT3904T/D M OTOROLA SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n A n n u lar T ran sisto r • • • • • S w itching Transistor Designed fo r Low C urrent S w itching	OCR Scan	BT3904T/D OT-23 O-236AB BT3904T BT3904 MBT3904T	PDF
transistor tt 2222 Abstract: itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor ITT 2222 A ITT rt.b Text: Philips Semiconductors bbSBTBl DDSTEb? 7 2 fl APX Product specification BLV948 UHF push-pull power transistor «N AMER P H I L I P S / D I S C R E T E FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting	OCR Scan	BLV948 OT262A2 PINNING-SOT262A2 2X100 15K/W; 15K/W transistor tt 2222 itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor ITT 2222 A ITT rt.b	PDF
NEC Ga FET marking L Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO	OCR Scan	NE434S01 NE434S01 NEC Ga FET marking L ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U	PDF
18n06l Abstract: stk audio power amplifiers stk 40 audio power amplifiers stk 013 stk power amplifiers 18N06 STK18N06L STK18N05L Text: 7 ^ 2 3 7 Ufi 004 b ll7 f l Tf i «SG TH SCS-THOMSON ¡LKgTMKS STK18N05L STK18N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK18N 05L S TK18H 06L • . ■ ■ ■ ■ . . Voss R D S on Id 50 V 60 V < 0.085 £2 < 0.085 SI 18 A	OCR Scan	STK18N TK18H STK18N05L STK18N06L OT-82 OT-194 7T2T237 STK18N05L/06L 18n06l stk audio power amplifiers stk 40 audio power amplifiers stk 013 stk power amplifiers 18N06 STK18N06L	PDF

TRANSISTOR D 659 Search Results

TRANSISTOR D 659 Result Highlights (5)

TRANSISTOR D 659 Datasheets Context Search

transistor BUX

tip122 tip127 audio amp schematic

2N2222A 338

y51 h 120c

J551

BFX89

BFQ66

613 GB 123 CT

CA3103E

an5296

GT45F122

NE68135

transistor A 564

SOT173

logos 4012B

Untitled

ecn 3-Phase Motor Driver IC

VDE0860

STP3N60

TIS43

BT3904

transistor tt 2222

NEC Ga FET marking L

18n06l