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    TRANSISTOR D 659 Search Results

    TRANSISTOR D 659 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 659 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    an5296

    Abstract: Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A
    Text: CA3146, CA3183 S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • • • • • The CA3146A, CA3146, CA3183A, and CA3183* are general purpose high voltage silicon n-p-n transistor arrays on a common monolithic substrate.


    Original     		PDF CA3146, CA3183 CA3146A, CA3183A, CA3183* 120MHz CA3183, an5296 Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


    Original     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009

    transistor BUX

    Abstract: BUX10 bux THOMSON 4682 bux 10
    Text: *BUX10 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR A N S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E % Preferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant 125 V 25 A


    OCR Scan     		PDF CB-19 transistor BUX BUX10 bux THOMSON 4682 bux 10

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    J551

    Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1
    Text: .SAMSUNG SEM ICO NDUCTOR INC 14E D | TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MPSH20 T-31-Ã 100MHz J551 TS 4142 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1

    BFX89

    Abstract: case BFX89 transistor IR 652 P
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.


    OCR Scan     		PDF bbS3T31 BFX89 7Z08812 7Z08857 7Z08814 T-37-15 7Z08815 BFX89 case BFX89 transistor IR 652 P

    BFQ66

    Abstract: transistor F 0552 transistor A 564 UBB303 SOT173 sot173x transistor K 1377
    Text: Phil/psSem iconductors^^ • bbSBTBl 0031bDb blO H A P X Product specification NPN 8 GHz wideband transistor ^ ^ DESCRIPTIO N BFQ66 ' N AUER PHIL IPS/DISCRETE b^E D PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SO T173 and


    OCR Scan     		PDF 0031bDfc> BFQ66 OT173 OT173X OT173. OT173X. BFQ66 transistor F 0552 transistor A 564 UBB303 SOT173 sot173x transistor K 1377

    613 GB 123 CT

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S


    OCR Scan     		PDF uPA812T 2SC4227) /xPA812T 613 GB 123 CT

    CA3103E

    Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183
    Text: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays


    OCR Scan     		PDF CA3146, CA3183 CA3146A, CA31B3A, CA3183* CA3146A CA3146 CA3103E ca3103 LVB 1.32 TA6103 CA3146E ca3183

    transistor A 564

    Abstract: transistor vc 548 3B 843 Transistor 2217S2
    Text: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed


    OCR Scan     		PDF OT173 BFQ66 711Dfl2b transistor A 564 transistor vc 548 3B 843 Transistor 2217S2

    SOT173

    Abstract: D-045 BFQ66 philips 586 K1HC k 219 transistor
    Text: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed


    OCR Scan     		PDF BFQ66 OT173X. SOT173 D-045 BFQ66 philips 586 K1HC k 219 transistor

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA M CT2 M CT2E 6 -Pin D IP O p to is o la to r s Transistor Output Th e se d ev ices con sist o f a g a lliu m ars e n id e in fra re d e m ittin g d io d e o p tic a lly c o u p led to a m o n o lith ic silicon p h o to tra n s is to r d etector.


    OCR Scan     		PDF

    ecn 3-Phase Motor Driver IC

    Abstract: BA6871 BA6871BS SDIP32 motor breaker gv2
    Text: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-w ave, p se u d o -lin e a r m o to r driver suite d for VCR cap stan m otors. The IC has a torque ripple cancellation circuit to reduce w ow and flutter, and an output transistor saturation prevention circuit that


    OCR Scan     		PDF BA6871BS BA6871BS ecn 3-Phase Motor Driver IC BA6871 SDIP32 motor breaker gv2

    VDE0860

    Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
    Text: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.


    OCR Scan     		PDF E54915 IEC380/VDE0806, IEC435 VDE0805, IEC65/VDE0860, VDE110b, IEC204//^ VDE0113, VDE0160, VDE0832, VDE0860 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E

    STP3N60

    Abstract: stp3n60xi ISOWATT221
    Text: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION


    OCR Scan     		PDF STP3N60XI ISOWATT221 GC24I60 CC24170 GC3S79Q STP3N60 stp3n60xi ISOWATT221

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    BT3904

    Abstract: MBT3904T
    Text: To Lynn Murphy From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 08/18/97 09:22 03/08 Order this data sheet by M M BT3904T/D M OTOROLA SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n A n n u lar T ran sisto r • • • • • S w itching Transistor Designed fo r Low C urrent S w itching


    OCR Scan     		PDF BT3904T/D OT-23 O-236AB BT3904T BT3904 MBT3904T

    transistor tt 2222

    Abstract: itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor ITT 2222 A ITT rt.b
    Text: Philips Semiconductors bbSBTBl DDSTEb? 7 2 fl APX Product specification BLV948 UHF push-pull power transistor «N AMER P H I L I P S / D I S C R E T E FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting


    OCR Scan     		PDF BLV948 OT262A2 PINNING-SOT262A2 2X100 15K/W; 15K/W transistor tt 2222 itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor ITT 2222 A ITT rt.b

    NEC Ga FET marking L

    Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO


    OCR Scan     		PDF NE434S01 NE434S01 NEC Ga FET marking L ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U

    18n06l

    Abstract: stk audio power amplifiers stk 40 audio power amplifiers stk 013 stk power amplifiers 18N06 STK18N06L STK18N05L
    Text: 7 ^ 2 3 7 Ufi 004 b ll7 f l Tf i «SG TH SCS-THOMSON ¡LKgTMKS STK18N05L STK18N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK18N 05L S TK18H 06L • . ■ ■ ■ ■ . . Voss R D S on Id 50 V 60 V < 0.085 £2 < 0.085 SI 18 A


    OCR Scan     		PDF STK18N TK18H STK18N05L STK18N06L OT-82 OT-194 7T2T237 STK18N05L/06L 18n06l stk audio power amplifiers stk 40 audio power amplifiers stk 013 stk power amplifiers 18N06 STK18N06L