Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
2N3904,
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2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
2N3904
LM96163C
LM96163CISD
LM96163CISDX
QFN10
RLs6
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RTU620
Abstract: No abstract text available
Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta
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LM96163
LM96163
SNAS433C
RTU620
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BC847N3
Abstract: No abstract text available
Text: CYStech Electronics Corp. Spec. No. : C907N3 Issued Date : 2003.07.31 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BC847N3 Description • The BC847N3 is designed for general purpose switching and amplification applications.
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C907N3
BC847N3
BC847N3
BC857N3.
100mA
OT-23
UL94V-0
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bc817n3
Abstract: 8F sot23 BC807N3
Text: CYStech Electronics Corp. Spec. No. : C906N3 Issued Date : 2003.05.12 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BC817N3 Description • The BC817N3 is designed for general purpose switching and amplification applications.
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C906N3
BC817N3
BC817N3
BC807N3.
500mA)
OT-23
UL94V-0
8F sot23
BC807N3
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BC807N3
Abstract: 9F marking sot23 pnp marking 9f C905N
Text: CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2005.05.10 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BC807N3 Description • The BC807N3 is designed for general purpose switching and amplification applications. It is housed in
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C905N3
BC807N3
BC807N3
OT-23/SC-59
BC817N3
OT-23
UL94V-0
9F marking sot23
pnp marking 9f
C905N
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Untitled
Abstract: No abstract text available
Text: LM96163 www.ti.com SNAS433C – JUNE 2008 – REVISED OCTOBER 2011 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES 1 • 2 • • •
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LM96163
SNAS433C
LM96163
2N3904
12-step
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vq 123
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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O-247
125CC
MGW12N120E
vq 123
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gp20n60
Abstract: transistor fall time MJ10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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O-220
MGP20N60U
CASE221A-09
O-22DAB
GP20N60U
gp20n60
transistor fall time
MJ10
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGP4N60E
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GY25N120
Abstract: n120 30 igbt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGY25
O-264
GY25N120
0E-05
0E-04
0E-03
0E-02
0E-01
GY25N120
n120 30 igbt
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zener DIODE C25
Abstract: motorola 4102
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D In su lated G ate B ipolar Transistor N-Channei Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching
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T0220
MGP2N60D
21A-09
O-220AB
zener DIODE C25
motorola 4102
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is
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TCJ-220
MGP14NG0E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW 2 0 N 120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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OCR Scan
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PDF
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O-247
20N120
0E-02
0E-01
0E-05
0E-04
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP15N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP15N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP15N60U/D
MGP15N60U
O-220
21A-09
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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OCR Scan
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PDF
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MGP11N60E/D
GP11N6
21A-06
O-220AB
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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OCR Scan
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PDF
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MGP4N60E/D
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N60E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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OCR Scan
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PDF
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MGP21
N60E/D
MGP21N60ED
N60E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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OCR Scan
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PDF
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MGP20N60U/D
MGP20N60U
O-220
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP15N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GP15N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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OCR Scan
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PDF
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MGP15N60U/D
GP15N60U
O-220
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diode lt 238
Abstract: 21N60ED
Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced
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MGW21
N60ED/D
MGW21N60ED/D
diode lt 238
21N60ED
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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6c_ transistor
Abstract: transistor 6c x 6C transistor transistor 6c
Text: ^/outran IPKOOOilgTr Ä?ÄIL LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available
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203mm)
009Mx
45MHz
45MHz
SDT05573,
SDT05673
200mA,
6c_ transistor
transistor 6c x
6C transistor
transistor 6c
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