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    Motorola Semiconductor Products MGP11N60ED

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    Bristol Electronics MGP11N60ED 1,493 5
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    onsemi MGP11N60ED

    Insulated Gate Bipolar Transistor, 15A, 600V, N-Channel, TO-220AB
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    Rochester Electronics MGP11N60ED 178 1
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    GP11N6 Datasheets Context Search

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    Contextual Info: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		GP11N60E/D PDF

    Contextual Info: MOTOROLA Order this document by GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		MGP11N60E/D GP11N6 21A-06 O-220AB PDF

    11n60

    Contextual Info: MOTOROLA Order this document by GP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet GP11N60DE In sulated G ate Bipolar TVansistor with A n ti-P arallel Diode IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		MGP11N60DE/D 2PHX34714-0 11n60 PDF

    Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


    OCR Scan     		MGP11 N60ED/D MGP11N60ED/D PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		MGP11N60ED PDF