Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GP11N6 Search Results

    SF Impression Pixel

    GP11N6 Price and Stock

    onsemi MGP11N60ED

    - Bulk (Alt: MGP11N60ED)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MGP11N60ED Bulk 4 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Rochester Electronics MGP11N60ED 178 1
    • 1 $0.5005
    • 10 $0.5005
    • 100 $0.4705
    • 1000 $0.4254
    • 10000 $0.4254
    		Buy Now

    Motorola Semiconductor Products MGP11N60ED

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MGP11N60ED 1,493 5
    • 1 -
    • 10 $1.2375
    • 100 $0.4641
    • 1000 $0.3465
    • 10000 $0.3218
    		Buy Now

    GP11N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF GP11N60E/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		PDF MGP11N60E/D GP11N6 21A-06 O-220AB

    11n60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by GP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet GP11N60DE In sulated G ate Bipolar TVansistor with A n ti-P arallel Diode IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		PDF MGP11N60DE/D 2PHX34714-0 11n60

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


    OCR Scan     		PDF MGP11 N60ED/D MGP11N60ED/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		PDF MGP11N60ED