340G-02
Abstract: Y25N120 GY25N120 motorola transistor m 237
Text: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M GY25N120 Insulated G ate Bipolar Transistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage
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MGY25N
120/D
GY25N120
MGY25N120/D
340G-02
Y25N120
GY25N120
motorola transistor m 237
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transistor motorola 236
Abstract: motorola transistor m 237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 25 A @ 90 C 38 A @ 25°C 1200 VOLTS
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OCR Scan
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GY25N120D
transistor motorola 236
motorola transistor m 237
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GY25N120
Abstract: n120 30 igbt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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OCR Scan
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PDF
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MGY25
O-264
GY25N120
0E-05
0E-04
0E-03
0E-02
0E-01
GY25N120
n120 30 igbt
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