Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    12N120E Search Results

    12N120E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    vq 123

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		O-247 125CC MGW12N120E vq 123 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information 12N120E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		MGW12N120E/D PDF