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    TRANSISTOR C 143 Search Results

    TRANSISTOR C 143 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 143 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    234 8715

    Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 234 8715 Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B PDF

    Untitled

    Abstract: No abstract text available
    Text: 1415-7 7 Watts, 20 Volts, Class C Microwave 1430 - 1540 MHz CASE OUTLINE 55LV, STYLE 1 GENERAL DESCRIPTION The 1415-7 is an internally matched, COMMON BASE transistor capable of providing 7 watts of CW RF Output power across the 1430-1540 MHz band. This transistor is specifically designed for telemetry and telecommunications


    Original     		PDF

    2SC5408

    Abstract: 2SC5408-T1 p1209
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin


    Original     		2SC5408 2SC5408-T1 2SC5408 2SC5408-T1 p1209 PDF

    BRF92

    Abstract: BRF92A
    Text: BFR92A NPN WIDEBAND TRANSISTOR POWER SEMICONDUCTOR Features • • • • • RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data • • • • • C E


    Original     		BFR92A OT-23 OT-23, MIL-STD-202, 500MHz 800MHz DS30031 BRF92 BRF92A PDF

    transistor marking E39

    Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.


    Original     		OT-143) transistor marking E39 E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72 PDF

    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


    OCR Scan     		b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318 PDF

    transistor MAR 825

    Abstract: mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65
    Text: Tem ic BFQ67 S e m U o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low-noise. small-signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain


    OCR Scan     		BFQ67 24-Mar-97 transistor MAR 825 mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		Q62702-F1051 OT-23 a23SbQS PDF

    Untitled

    Abstract: No abstract text available
    Text: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz


    OCR Scan     		AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 5963-1862E 5965-1401E PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF am plifier up to G H z range. Features • H igh pow er gain • Low noise figure • High transition frequency M arking: FE Plastic case SO T 143 1 = C ollector; 2 = E m itter; 3 = Base; 4 = Em itter


    OCR Scan     		BFP93A ar-97 PDF

    transistor C 5386

    Abstract: 24 5805 054 000 829 c 4468 power transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES P A C K A G E D IM E N S IO N S • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB


    OCR Scan     		2SC5184 SC-70 2SG5184-T1 2SC5184-T2 transistor C 5386 24 5805 054 000 829 c 4468 power transistor PDF

    AT415

    Abstract: No abstract text available
    Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga


    OCR Scan     		AT-41511, T-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT415 PDF

    mw 772

    Abstract: 12L marking
    Text: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration RAs Q62702-F1222 1 =C 2= E Package 3=B II Marking BF 772 LU Type SOT-143


    OCR Scan     		Q62702-F1222 OT-143 mw 772 12L marking PDF

    NE24600

    Abstract: NE24620 2SC2952 2SC2953 NE24615
    Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :


    OCR Scan     		tj4S74m 00G237S NE24600 NE24615 NE24620 NE24620 NE246 preve35 2SC2952 2SC2953 PDF

    BFR91A

    Abstract: No abstract text available
    Text: TEMIC BFR91A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		BFR91A BFR91A D-74025 31-Oct-97 PDF

    marking 83

    Abstract: BFP183T
    Text: Temic BFP183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features


    OCR Scan     		BFP183T 17-Apr-96 marking 83 BFP183T PDF

    Untitled

    Abstract: No abstract text available
    Text: TEMIC BFS17AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator


    OCR Scan     		BFS17AW D-74025 -Nov-97 PDF

    sl2 357

    Abstract: ML 1557 b transistor telefunken P 152 MT a3 sot 343
    Text: Temic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency


    OCR Scan     		BFP93A D-74025 31-Oct-97 sl2 357 ML 1557 b transistor telefunken P 152 MT a3 sot 343 PDF

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


    OCR Scan     		b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164 PDF

    marking 822

    Abstract: transistor IC 1557 b Telefunken u 257
    Text: Temic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features •


    OCR Scan     		S822T 08-Apr-97 marking 822 transistor IC 1557 b Telefunken u 257 PDF

    SOT-23 marking 717

    Abstract: un 1044 Telefunken u 257
    Text: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		BFR92/BFR92R BFR92 BFR92R D-74025 31-Oct-97 SOT-23 marking 717 un 1044 Telefunken u 257 PDF

    ic-vn

    Abstract: No abstract text available
    Text: Temic BFP67/BFP67R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. jk Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain


    OCR Scan     		BFP67/BFP67R BFP67 BFP67R 10-Mar-97 tQ-05 1O-Mar-97 ic-vn PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic BFR92AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency


    OCR Scan     		BFR92AW Vattk20 D-74025 07-Nov-97 PDF

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857 PDF