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    RM3182A

    Abstract: RM3182AL RM3182AS
    Text: Electronics Semiconductor Division RM3182A ARINC 429 Differential Line Driver Features Description • • • • • • • • • • The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level


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    PDF RM3182A RM3182A DS3003182A RM3182AL RM3182AS

    400w power amplifier circuit diagram

    Abstract: RM3182A RM3182AL RM3182AS
    Text: www.fairchildsemi.com RM3182A ARINC 429 Differential Line Driver Features Description • • • • • • • • • • The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level


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    PDF RM3182A RM3182A DS3003182A 400w power amplifier circuit diagram RM3182AL RM3182AS

    1C00

    Abstract: DAC088S085 DAC108S085 DAC128S085 68hc11 interface 3v3 sot23 DS300312-02-JP
    Text: ご注意:この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。


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    PDF DAC108S085 95mW5V DAC108S085 40MHz 25MHz 1C00 DAC088S085 DAC128S085 68hc11 interface 3v3 sot23 DS300312-02-JP

    BRF92

    Abstract: BRF92A
    Text: BFR92A NPN WIDEBAND TRANSISTOR POWER SEMICONDUCTOR Features • • • • • RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data • • • • • C E


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    PDF BFR92A OT-23 OT-23, MIL-STD-202, 500MHz 800MHz DS30031 BRF92 BRF92A

    brf92

    Abstract: BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473
    Text: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW · · · · · Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,


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    PDF BFR92A OT-23 OT-23, MIL-STD-202, 800MHz DS30031 500MHz brf92 BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473

    Untitled

    Abstract: No abstract text available
    Text: BFR92A NPN WIDEBAND TRANSISTOR POWER SEMICONDUCTOR Features • • • • • RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data • • • • • C E


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    PDF BFR92A OT-23 OT-23, MIL-STD-202, 800MHz 500MHz DS30031

    LED56F

    Abstract: Infrared phototransistor TO18
    Text: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X


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    PDF LED55BF LED55CF LED56F LED55BF/LED55CF/LED56F 940nm LED55CF LED55CFB LED56F Infrared phototransistor TO18

    HSR412

    Abstract: No abstract text available
    Text: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are


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    PDF HSR312 HSR412 HSR312L HSR412L HSR312L HSR412 HSR412L HSR312, HSR312L)

    LED55B

    Abstract: LED55C LED56
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 LED55CB LED55C LED55B LED56

    LED55C

    Abstract: LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18 LED55B/LED55C/LED56
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 DS300312 LED55C LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18

    LED56F

    Abstract: fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF
    Text: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X


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    PDF LED55BF LED55CF LED56F LED55BF/LED55CF/LED56F 940nm DS300313 LED56F fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF

    smbus

    Abstract: DS32EV100 PRBS7 AN-1187 DS32EV400 DS32EV400SQ PRBS-31 DisplayPort LVDS BSt p 45 B 90 bst h 04 20
    Text: ご注意 : こ の日本語デー タ シー ト は参考資料 と し て提供 し てお り 内容が最新でない 場合があ り ます。製品のご検討およびご採用に際 し ては、必ず最新の英文デー タ シー ト を ご確認 く だ さ い。


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    PDF DS32EV400 PRBS-31 8b/10b 375mW 8b10b DS300319-06-JP smbus DS32EV100 PRBS7 AN-1187 DS32EV400 DS32EV400SQ PRBS-31 DisplayPort LVDS BSt p 45 B 90 bst h 04 20

    RM3182A

    Abstract: RM3182AS
    Text: www.fairchildsemi.com RM3182A ARINC 429 Differential Line Driver Features Description • • • • • • • • • The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level


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    PDF RM3182A RM3182A DS3003182A RM3182AS

    LM20242

    Abstract: No abstract text available
    Text: ご注意:この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。


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    PDF LM20242 36V2A 130m/110m 100kHz eTSSOP-20 LM20242

    1C00

    Abstract: DAC088S085 DAC108S085 DAC128S085 80c51 application note 68hc11 interface
    Text: ご注意:この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。


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    PDF DAC088S085 95mW5V DAC088S085 40MHz 25MHz 1C00 DAC108S085 DAC128S085 80c51 application note 68hc11 interface

    LED55B

    Abstract: LED55C LED56 Infrared phototransistor TO18
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 LED55C LED55CB LED55B LED56 Infrared phototransistor TO18

    smd code va

    Abstract: 68hc11 interface 1C00 DAC088S085 DAC108S085 DAC128S085
    Text: ご注意:この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。


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    PDF DAC088S085 95mW5V DAC088S085 40MHz 25MHz smd code va 68hc11 interface 1C00 DAC108S085 DAC128S085

    HSR412

    Abstract: series connection of mosfet HSR312 HSR312L HSR412L photovoltaic A190N
    Text: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are


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    PDF HSR312 HSR312L HSR412 HSR412L HSR312 HSR412 HSR312L HSR412L HSR312, HSR312L) series connection of mosfet photovoltaic A190N

    BRF92A

    Abstract: No abstract text available
    Text: BFR92A NPN WIDEBAND TRANSISTOR Features RF Wideband Amplifier/Oscillator 5G H z Transition Frequency Low Intermodulation Distortion High Power Gain SOT-23 Low Noise TOP VIEW Mechanical Data_ nr B C A Case: SO T-23, Molded Plastic Leads/Terminals: Solderable per M IL-STD-202,


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    PDF BFR92A OT-23 IL-STD-202, DS30031 BRF92A

    PIC16C540

    Abstract: PIC16XXX PIC1670 PIC PROGRAMMING CODES picsim 4x13 32x8 EPROM
    Text: & PIC 16xxx M icro ch ip PIC 16xxx Series Microcontroller Family FEATURES PIC EPROM Technology PIC's OTP EPROM technology offers a low cost alterna­ tive to using com petitive ROM based devices for high volum e production. EPROM technology also offers several important cost saving advantages namely:


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    PDF 16xxx 16xxx DS30031A-4 PIC16C540 PIC16XXX PIC1670 PIC PROGRAMMING CODES picsim 4x13 32x8 EPROM

    Untitled

    Abstract: No abstract text available
    Text: w w w .fa irc h ild s e m i.c o m S E M I C O N D U C T O R tm RM3 1 82 A ARINC 429 Differential Line Driver Description The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level


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    PDF RM3182A DS3003182A

    brf92

    Abstract: BRF92A transistor CQ 548 npn BFR92A marking p2
    Text: BFR92A NPN WIDEBAND TRANSISTOR Features RF W ideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 TOR VIEW nr Mechanical Data B C A Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,


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    PDF BFR92A OT-23, MIL-STD-202, OT-23 BRF92A 500MHz 00MHz DS30031 BFR92A brf92 transistor CQ 548 npn marking p2

    brf92

    Abstract: brf92a BFR92A
    Text: BFR92A VISHAY NPN WIDEBAND TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features RF Wideband Amplifier/Oscillator 5G H z Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 -H ; h - A TOP VIEW nr Mechanical Data Case: SO T-23, Molded Plastic


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    PDF BFR92A OT-23, MIL-STD-202, OT-23 BRF92A 500MHz 00MHz DS30031 BFR92A brf92

    RM3182A

    Abstract: RM3182AL RM3182AS
    Text: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm RM3182A A R IN C 429 D iffe re n tia l Line Driver Description The RM 3182A is a complete differential line driver IC. W hen Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level


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    PDF RM3182A MIL-STD-883B 16-lead 28-Terminal RM3182A RM318 DS3003182A RM3182AL RM3182AS