Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C 124 Search Results

    TRANSISTOR C 124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ansley idc ribbon connector

    Abstract: augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3
    Text: Tyco/Augat PCB Connectors, Sockets, Plug Assemblies and Tooling Transistor Sockets 600 Series Ñ AG and CG Plug Adapter Assemblies c c c c c c c Polarization: Dot, Notch, Bump c Contact Plating: 30 µ" Gold per Mil-G-45204 The Augat Transistor sockets utilize hi-rel machined outer sleeves and gold plated inner contacts assembled into a low


    Original     		PDF Mil-G-45204 profi00-499 609-XX06 609-XX ansley idc ribbon connector augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3

    234 8715

    Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 234 8715 Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B

    HFA3046

    Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127B

    transistor 224-1 base collector emitter

    Abstract: transistor 0588
    Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector


    Original     		PDF NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588

    HFA3046

    Abstract: TYPE 85.54 542E02 542E-02
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 TYPE 85.54 542E02 542E-02

    BLW81

    Abstract: transistor rf m 1104
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


    Original     		PDF BLW81 BLW81 transistor rf m 1104

    V 7271 U

    Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E
    Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on


    Original     		PDF HFA3102 10GHz HFA3102 10GHz) V 7271 U 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E

    4948 transistor bf

    Abstract: 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102 HFA3102B HFA3102B96
    Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1996 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on


    Original     		PDF HFA3102 10GHz HFA3102 10GHz) 4948 transistor bf 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102B HFA3102B96

    285-1 MAG IC

    Abstract: C 2851 transistor c 3198 transistor 1348 transistor Transistor 168 TRANSISTOR C 2570 IC 4073 B15V18008 c 2570 transistor
    Text: BIPOLARICS, INC. Part Number B15V18008 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V18008 is a high performance silicon bipolar transistor intended for power linear and Class C applications


    Original     		PDF B15V18008 B15V18008 285-1 MAG IC C 2851 transistor c 3198 transistor 1348 transistor Transistor 168 TRANSISTOR C 2570 IC 4073 c 2570 transistor

    Harris HFA3101 5 GHz Gilbert cell array

    Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		PDF HFA3101 10GHz HFA3101 10GHz) Harris HFA3101 5 GHz Gilbert cell array Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B reactance modulator HFA3101B96

    sot223 device Marking

    Abstract: No abstract text available
    Text: CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE SAT PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090LE is an Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard


    Original     		PDF CZT7090LE CZT7090LE OT-223 CZT3090LE sot223 device Marking

    Untitled

    Abstract: No abstract text available
    Text: CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE SAT PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090LE is an Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard


    Original     		PDF CZT7090LE CZT7090LE OT-223 CZT3090LE

    kf 8715

    Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		PDF HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
    Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C


    Original     		PDF B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    bfr106

    Abstract: No abstract text available
    Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23


    OCR Scan     		PDF D02S20D BFR106 bfr106

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • Low C ollector Em itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic VcBO Sym bol 50 V C ollector Em itter Voltage


    OCR Scan     		PDF KSC3076

    Transistor TT 2144

    Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
    Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol 50 V C ollecto r E m itter Voltage


    OCR Scan     		PDF KSC3076

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W


    OCR Scan     		PDF 3403ES7

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo


    OCR Scan     		PDF KSC3076

    2Sc2525

    Abstract: 2SC2526
    Text: January 1990 Edition 1.1 — - FUJITSU PRODUCT PROFILE 2SC2525, 2SC2526 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon N P N general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor { R E T te c h ­


    OCR Scan     		PDF 2SC2525, 2SC2526 2SC2526 2Sc2525

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­


    OCR Scan     		PDF QCA200A40/60 400/600V QCA200A

    BFG96

    Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
    Text: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION


    OCR Scan     		PDF 0031H1H BFG96 OT103 BFG32. OT103. BFG96 V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers