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    TRANSISTOR BF 194 E C B Search Results

    TRANSISTOR BF 194 E C B Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 194 E C B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF 194 transistor

    Abstract: VPS05178 BFP194
    Text: BFP 194 PNP Silicon RF Transistor 3  For low distortion broadband amplifier in antenna and telecommunications systems up 4 to 1.5 GHz at collector currents from 20 mA to 80 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 OT-143 900MHz Oct-12-1999 BF 194 transistor VPS05178 BFP194

    TS 11178

    Abstract: BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration
    Text: BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF OT-143 Q62702-F1347 900MHz Dec-13-1996 TS 11178 BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration

    bf 194 pin configuration

    Abstract: Transistor BFR 35 BFr pnp transistor
    Text: BFR 194 PNP Silicon RF Transistor 3  For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Complementary type: BFR 106 NPN 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05161 OT-23 900MHz Oct-25-1999 bf 194 pin configuration Transistor BFR 35 BFr pnp transistor

    sot-23 rks

    Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
    Text: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF OT-23 Q62702-F1346 900MHz Dec-13-1996 sot-23 rks marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration

    BFR106

    Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
    Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor

    BFr pnp transistor

    Abstract: BFR106 Transistor BFR 80 BFR 30 transistor
    Text: BFR 106 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers  For linear broadband amplifiers  Special application: antenna amplifiers  Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05161 OT-23 Oct-26-1999 BFr pnp transistor BFR106 Transistor BFR 80 BFR 30 transistor

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


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    PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    transistor kf 469

    Abstract: CMP10 CMP12 HBFP-0420 transistor bf 198 transistor Bf 981
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0420 is a high performance isolated


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    PDF HBFP-0420 OT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E transistor kf 469 CMP10 CMP12 transistor bf 198 transistor Bf 981

    HBFP0420TR1

    Abstract: transistor KF 517
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0420 is a high performance isolated collector


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    PDF HBFP-0420 OT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-1684E 5968-5433E HBFP0420TR1 transistor KF 517

    Untitled

    Abstract: No abstract text available
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Surface Mount Plastic Description Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0420 is a high performance isolated


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    PDF HBFP-0420 OT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E 5968-1684E

    BF 194 transistor

    Abstract: BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 1 A inTO -39 ( - T O - 5 ) metal case Type Maximum ratings C haracteristics at Tamb f'Ù (ñ ) T , = 1am b 25 °C T = ÍÍ5 °C c a se (Tcase = 100 °C) T ,°C 200 200 200 200 200 200


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    PDF BSY81 BSY82 BFY50 BFY51 BF 194 transistor BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81

    Untitled

    Abstract: No abstract text available
    Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min min VCE ICM PTA ICBO VCE sat mA Volts mA mW max max 1C min/max typ Cob


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    PDF S3fl33T4 lo-32

    bfw10 transistor

    Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec


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    PDF O-237 bfw10 transistor pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor

    transistor BF 506

    Abstract: BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor
    Text: BF 506 SILICON PLANAR PNP VH F O SC ILLA T O R M IX E R The B F 506 is a silicon planar epitaxial PN P transistor in Jedec T O -9 2 plastic package. It is intended for use as mixer and oscillator in the V H F range. However, it may also be used as not controlled preamplifier at low noise.


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    PDF TQ-92 transistor BF 506 BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor

    BFR194

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194

    TS 11178

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1346 OT-23 B535bQ5 BFR194 900MHz TS 11178

    transistor bf 196

    Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS B FP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5 GHz at collector currents from 20mA to 80mA RKs Q62702-F1347 1 =C 2=E LU II ''•cfr BFP 194 CO II 03 ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF OT-143 Q62702-F1347 900MHz IS211

    Mje 1532

    Abstract: BFP194
    Text: SIEMENS BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1347 OT-143 BFP194 0535tjQS 900MHz 23Sb05 Mje 1532 BFP194

    BFR106

    Abstract: 2I k
    Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF OT-23 Q62702-F1219 BFR106 900MHz BFR106 2I k

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    Transistor BFr 99

    Abstract: No abstract text available
    Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1219 OT-23 flE35b05 900MHz Transistor BFr 99

    BFR94

    Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
    Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency


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    PDF bbS3T31 BFQ34 BFR94 T-33-Ã OT-48 VCE-20V BFR94 Ferroxcube cross reference Ferroxcube core BFR94A f2nd transistor 3305

    transistor kf 469

    Abstract: transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389
    Text: ¥ ti¡%HEWLETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Transition Freque ncy


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    PDF HBFP-0420 Package/SOT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E 5968-1684E transistor kf 469 transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389