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    TRANSISTOR BD 140 16 Search Results

    TRANSISTOR BD 140 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 140 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


    Original     		PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    BD140 application circuits circuits

    Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138
    Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


    Original     		PDF BD136/D* BD136/D BD140 application circuits circuits transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138

    BD139 MOTOROLA

    Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
    Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


    Original     		PDF BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135

    BD165

    Abstract: TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data
    Text: MOTOROLA Order this document by BD165/D SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi


    Original     		PDF BD165/D* BD165/D BD165 TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M140 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011M140 IB1011M140 IB1011M140-REV-NC-DS-REV-NC

    BD138

    Abstract: bd140 Complement BD136 bd139 Complement transistor BD140 BD135 BD137 BD139 BD140 power transistor bd136
    Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector Base Voltage :B D 1 3 6 : BD138 : BD140 C ollector E m itter Voltage : BD 136


    OCR Scan     		PDF BD136/138/140 BD135, BD137 BD139 BD136 BD138 BD140 BD138 bd140 Complement bd139 Complement transistor BD140 BD135 BD140 power transistor bd136

    Untitled

    Abstract: No abstract text available
    Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD138 - 60 V : BD140 - 80 V - 45 V C ollector Base Voltage


    OCR Scan     		PDF BD136/138/140 BD135, BD139 BD138 BD140 BD136

    BD 266 S

    Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
    Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing


    OCR Scan     		PDF b3b725M BD136 BD138 BD140 O-225AA 0GflM70t BD 266 S BD140 pnp transistor BD 136 to225a transistor bd 140 -16 transistor 136 138 140 BD136.6

    TRANSISTOR BC 136

    Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
    Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan     		PDF T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711

    10 watt power transistor bd

    Abstract: transistor BD 140 transistor BD 136 bd140 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 BD140-10 P lastic Medium Power Silicon PNP Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpg = 40 Min @ l c = 0.15 Adc


    OCR Scan     		PDF BD136 BD138 BD140 BD140-10 10 watt power transistor bd transistor BD 140 transistor BD 136 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140

    bo 139

    Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
    Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing


    OCR Scan     		PDF L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140

    BD 139 transistor

    Abstract: TRANSISTOR BD 136 BDI36 BD140 BD140-10 BDI38 BD 140 transistor 136 138 140 BD136 transistor bd 138
    Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 B D 140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. •


    OCR Scan     		PDF BD136/D BD136 BD138 BD140 O-225AA BD 139 transistor TRANSISTOR BD 136 BDI36 BD140-10 BDI38 BD 140 transistor 136 138 140 transistor bd 138

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan     		PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    BDX 241

    Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan     		PDF T0-220AB O-220AB 5-40V BD710 BDX 241 transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055

    BD 149 transistor

    Abstract: bd 317 BD315 bd318 transistor D317 BD317
    Text: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith


    OCR Scan     		PDF BD315, BD318. AN-415) BD 149 transistor bd 317 BD315 bd318 transistor D317 BD317

    HN1V02H

    Abstract: No abstract text available
    Text: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 1 SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V


    OCR Scan     		PDF HN1V02H HN1V02H

    transistor BD 424

    Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
    Text: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets


    OCR Scan     		PDF 235b05 G0G4352 Q62702-D1068 QDQ43SM BD424 transistor BD 424 a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202

    transistor bd 126

    Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
    Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan     		PDF DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711

    8d136

    Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
    Text: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6


    OCR Scan     		PDF 8D136, BD138, BD140 BD136. 023SbQS Q0QH341 BD13S. B0138, 8d136 transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133

    BDI35

    Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139
    Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc


    OCR Scan     		PDF BD135/D BD135 BD137 BD139 O-225AA BDI35 BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139

    transistor BD 141

    Abstract: No abstract text available
    Text: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126


    OCR Scan     		PDF BD136. BD138, BD140 6235bQS BD138. transistor BD 141

    transistor BD 800

    Abstract: transistor BD 110
    Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


    OCR Scan     		PDF A235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 800 transistor BD 110

    transistor BD 110

    Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
    Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


    OCR Scan     		PDF fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524

    8D139

    Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
    Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126


    OCR Scan     		PDF fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135