2N6432
Abstract: 2N6432 MOTOROLA 2N6433
Text: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage
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b3b725M
2N6432
2N6433
O-206AA)
2N6433
2N3743
2N6432 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SC X ST RS /R F UbE D • b3b725M O O ^ b M b T ■ flOTfe-F-JÖ'^S MOTOROLA SEMICONDUCTOR ■ h h h h m h h i TECHNICAL DATA DUO PRELIMINARY DATA mini MMCM4261HXV/HS (SINGLE) MD4261FHXV/HS (DUAL) MQ4261 HXV/HS (QUAD) Discrete Military Operation
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b3b725M
MMCM4261HXV/HS
MD4261FHXV/HS
MQ4261
MIL-S-19500/511
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X332
Abstract: 044VH1 14J7 mje6220 D44VH7 d44vh10 d44vh 104 cev D45VH4
Text: MOTOROLA SC XSTRS/R 1EE D I F b3b725M □DflM'lbS 7 | NPN MOTOROLA D44VH Series SEMICONDUCTOR PNP TECHNICAL DATA D45VH Series 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS These complementary silicon power transistors are designed for
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MJE6220/52e
D44VH
D45VH
X332
044VH1
14J7
mje6220
D44VH7
d44vh10
104 cev
D45VH4
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MJH16010A
Abstract: MJ16010A AMs03 p6302 TIS100 MJ1601 T1N2 100CC AN952 baker
Text: MOTOROL A SC 1EE 0 I b3b725M □OäSEll 5 | XSTRS/R F 7-33-lS MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA Designer's Data Sheet POWER TRANSISTORS 15 AM PERES 500 VOLTS 125 and 175 WATTS NPN Silicon Power Transistors 1 kV Switchmode III Series These transistors are designed for high-voltage, high-speed, power switching in
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b3b725Â
7-33-/S
O-204AA
MJ16010A
1X126
O-218AC
MJH16010A
MJH16010A
MJ16010A
AMs03
p6302
TIS100
MJ1601
T1N2
100CC
AN952
baker
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TRW63601
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D | b3b725M 0000451 T -'b 'b -V l T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW63601 The RF Line M ic ro w a v e P o w e r O s c illa to r T ra n s is to r MICROWAVE POWER OSCILLATOR TRANSISTOR . designed for use as power oscillators at frequencies to 3.5 GHz with guaranteed
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b3b725M
TRW63601
TRW63601
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Cross Reference power MOSFET
Abstract: motorola Cross Reference
Text: MOTOROLA SC XSTRS/R F MbE D b3b725M 0CH32Q2 D m n 0 1 l> ~ p 3 7 '0 ( Multiple Chip Products (continued) CASE 809-02 CASE 816-02 Table 14 — TMOS Power MOSFET Modules Conditions Max. Resistive Switching Max Max vq ss Dual 50 450 MT50B2Y45 Dual 50 450 MT50BY45
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b3b725M
0CH32Q2
MT50B2Y45
MT50BY45
MT50B2Y50
MT50BY50
MT8FR45
MT15FR45
MPM6702
100x6
Cross Reference power MOSFET
motorola Cross Reference
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BD 266 S
Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing
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b3b725M
BD136
BD138
BD140
O-225AA
0GflM70t
BD 266 S
BD140 pnp transistor
BD 136
to225a
transistor bd 140 -16
transistor 136 138 140
BD136.6
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MRF515
Abstract: motorola MRF515
Text: I MOTOROLA SC XSTRS/R F MbE P • b3b725M MOTOROLA DGTH7n T ■ SEMICONDUCTOR TECHNICAL DATA T ■ flO T b 5 3 - Q 5 MRF515 The R F L in e 0.75 W - 470 M H z NPN S IL IC O N H IG H F R EQ U E N C Y T R A N SIS T O R HIGH F R EQ U E N C Y T R A N SIST O R
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b3b725M
MRF515
MRF515
motorola MRF515
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MTPSP25
Abstract: No abstract text available
Text: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,
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MTP5P25
Y145M
Y145M,
AND-02
314B03
MTPSP25
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MTA5N50E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n
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MTA5N50E
AN1040.
b3b725M
MTA5N50E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and
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IRF730
O-220)
GlD273b
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2N5108
Abstract: No abstract text available
Text: I 4bE D L3b72S4 I OCmOfc.2 4 • M 0 ïb T : 3 3 " Û 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5108 MOTOROLA SC XSTRS/R F T h e R F L in e 1.0 W -1 GHz HIGH FREQUEN CY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator applica*
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L3b72S4
2N5108
2N5108
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PT9734
Abstract: arco 404 PT9730 Arco 403 PT9731 ARCO 0.1 Z PT9732 PT8731 9730 motorola SO 402 NH
Text: MOTOROLA SC X S T R S /R F MbE D m b 3 b ? 2 S 4 00=15143 S MOTOROLA “T SEMICONDUCTOR - 3 ^ O ( TECHNICAL DATA PT973p Series The RF Line V H F Pow er Transistors . . . designed primarily for wideband, large-signal output amplifier stages in the 30-200 MHz frequency range.
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PT973Q
PT9730
PT9732)
PT9734)
PT9734
arco 404
Arco 403
PT9731
ARCO 0.1 Z
PT9732
PT8731
9730 motorola
SO 402 NH
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MJH16018
Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
Text: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 | 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc
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I6S98SC
MJ16018
O-218AC
MJH16018
MJH16018
baker e4
MTPSP10
P6302
a626
AM503
bt 109 transistor
K1118
MJ16018
MTP8P10
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NS 8002 1151
Abstract: TO-66 CASE
Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications
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MIL-S-19500/379
O-116)
NS 8002 1151
TO-66 CASE
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245A-02
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per
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h3b7254
MIL-S-19500/
O-116)
245A-02
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552 MOSFET TRANSISTOR motorola
Abstract: 552 transistor motorola Z71A
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w
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BUZ71
BUZ71A
b3b725M
552 MOSFET TRANSISTOR motorola
552 transistor motorola
Z71A
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Untitled
Abstract: No abstract text available
Text: 4bE D b3b?ss4 00^2^73 b • rioTbT:3h23 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C5836HV Chip NPN Silicon High-Frequency Transistor Dm mim Discrete Military Operation . . .designed primarily for use in fast current-mode switching circuits in military and
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2C5836HV
b3b725M
2C5836HV
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BUZ11 motorola
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ11 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS III Power FET is designed for low voltage, high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
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BUZ11
b3b725M
BUZ11 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF610 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed pow er switching applications such as switching regulators, converters, solenoid and relay drivers.
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IRF610
010272b
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Untitled
Abstract: No abstract text available
Text: b 3 b ? 2 5 4 G l O l b l G Sbb « M O T b O rder th is data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount Transistor With M onolithic Bias Resistor N etw ork M UN5211T1 M UN5212T1 M UN5213T1
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MUN5211T1/D
SC-70/SOT-323
2PHX31155F-0
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IC 7443
Abstract: 2N6211 TC 3162 2N6213 motorola 2N6212 2N6213
Text: MOT ORCL A SC XSTRS/R F ÎHE D | b3b?2S4 □QflMbQb 1 | 2N6211 2N6212 2N6213 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE MEDIUM-POWER HIGH-VOLTAGE PNP POWER TRANSISTORS POWER TRANSISTORS . . . designed fo r high-speed switching and linear am plifier applications
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2N6211
2N6212
2N6213
2N6211,
2N6212,
IC 7443
TC 3162
2N6213 motorola
2N6213
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irf510 Motorola
Abstract: irf510 ir
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF510 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, con verters, solenoid and relay drivers.
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IRF510
b3b725M
irf510 Motorola
irf510 ir
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BFR96
Abstract: BFR96 TRANSISTOR transistor bfr96
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
D10b3
BFR96 TRANSISTOR
transistor bfr96
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