D 1437 transistor
Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16
Text: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10
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MMPQ6700
SOIC-16
2N3904
2N3906
D 1437 transistor
2N3904
2N3906
CBVK741B019
F63TNR
L86Z
MMPQ6700
NDM3000
NDM3001
SOIC-16
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Untitled
Abstract: No abstract text available
Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to
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MMPQ6700
SOIC-16
2N3904
2N3906
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2n3906 PNP transistor DC current gain
Abstract: 2N3904 NPN TRANSISTOR OPERATIONS
Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 mA to
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MMPQ6700
SOIC-16
2N3904
2N3906
2n3906 PNP transistor DC current gain
2N3904 NPN TRANSISTOR OPERATIONS
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MMPQ6700
Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complementary devices can be used in switches with collector currents of 10 µA to
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MMPQ6700
SOIC-16
2N3904
2N3906
MMPQ6700
2N3904
2N3906
CBVK741B019
F63TNR
L86Z
NDM3000
NDM3001
SOIC-16
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Untitled
Abstract: No abstract text available
Text: MMPQ6502 MMPQ6502 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6502 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and
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MMPQ6502
SOIC-16
PN2222A
PN2907A
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D 1437 transistor
Abstract: CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16
Text: MMPQ6502 MMPQ6502 B E4 4 B3 E1 B1 E2 SOIC-16 B2 E3 C C4 4 C3 C1 C2 C1 C C2 3 Pin #1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C 2 B2 E 2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and
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MMPQ6502
SOIC-16
PN2222A
PN2907A
D 1437 transistor
CBVK741B019
F63TNR
L86Z
MMPQ6502
NDM3000
NDM3001
PN2222A
PN2907A
SOIC-16
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transistor j 108
Abstract: No abstract text available
Text: ~ HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-B3 Series ~ 110 ~100 Ct., [:;3 1=1. -~I 1 TO-220 TRANSISTOR I I I A. N.C. Horiz. Device Only Mounted to G-10. 70 B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. ~ aJ < UJ !Q ~
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LATO127B3CB
w/TIP-29C
O-220)
O-220
LATO127B4CB
transistor j 108
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transistor TO-3 Outline Dimensions
Abstract: transistor c 129 LA394B4 LATO3B4B
Text: ~ HEAT DISSIPATORS FOR METAL CASE, CASE-MOUNTED LA-B3 Series for TO-3 Outline LATO3B3CB w/2N3055 ~11° ~ <0:> 100 1 fz w m ~ < w > a3 < w 00 0: 0.: ~ w fw 00 ~1 ~1-+;!~ A SEMICONDUCTORS YCI C B I~ D /1 90 / "./1 L -f 80 ~,. r TO-3 TRANSISTOR / .2: '"'""
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w/2N3055
LA407B4U
LA40JB4CB
LA407B4B
LA407B4
LA394B4CB
LA394B4B
LA394B4
LAJ94B4U
transistor TO-3 Outline Dimensions
transistor c 129
LA394B4
LATO3B4B
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CQM1-OD212
Abstract: CQM1-OD214 CQM1-OD213 CQM1-OD215 CQM1-OA221 CQM1-OD211 a7 transistor transistor A6 b7 tRANSISTOR CQM1OD213
Text: Transistor Output Units 8-point Transistor Output Unit Item Max. Switching Capacity CQM1-OD211 2 A at 24 VDC +10%/ –15% 5 A/Unit Leakage Current 0.1 mA max. Residual Voltage 0.7 V max. ON Delay 0.1 ms max. OFF Delay 0.3 ms max. No. of Outputs 8 points 8 points/common, 1 circuit
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CQM1-OD211
OUT07
OUT00
OUT03
OUT04
OUT05
CQM1-OD212
CQM1-OD214
CQM1-OD213
CQM1-OD215
CQM1-OA221
CQM1-OD211
a7 transistor
transistor A6
b7 tRANSISTOR
CQM1OD213
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molex Connector 51030-0330
Abstract: GT1-ID32ML-1 D-Sub 25-pin Connector GT1-OD16 G70D-SOC16-1 51030-0330 XW2D-40G6 GT1-ID16-1 FCN363J040-AU GT1-ID16
Text: Digital I/O Units Digital I/O Units Compatible with MULTIPLE I/O TERMINAL • Terminal block, connector, and high-density connector models are available. • The circuit block of the terminal block model can be
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D16MX
D16ML
D32ML
D16DS
molex Connector 51030-0330
GT1-ID32ML-1
D-Sub 25-pin Connector
GT1-OD16
G70D-SOC16-1
51030-0330
XW2D-40G6
GT1-ID16-1
FCN363J040-AU
GT1-ID16
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transistor B42
Abstract: AX400 b42 transistor
Text: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.
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b457S25
PH107
T-41-63
transistor B42
AX400
b42 transistor
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MJE305
Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Text: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -
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MJE2955T
MJE3055T
MJE2955T,
MJE305
MJE3055T
MJE30*T
MJE2955T-MJE3055T
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BLW81
Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Text: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.
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7Z77164
BLW81
IEC134
Vrr-12
philips 2222 807 trimmer
philips 2222 808 trimmer
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BLY91
Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _
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711062b
00b3bn
BLY91C/01
lthasaSOT122F
-SOT122F
MB8012
BLY91
BH 1117 F
Silicon Epitaxial Planar Transistor philips
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K1118
Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Text: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier
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b3b725M
MJ2955-
MJ2955A
MJ3029
K1118
MJ3029
transistor k 1119
transistor K 3532
d 1669 transistor
MJ2955 300 watts amplifier
MJ2955A
he01
Ic as20
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Untitled
Abstract: No abstract text available
Text: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and
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MUN5111T1/D
SC-70/SOT-323
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
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hfa3102-matched
Abstract: No abstract text available
Text: High Frequency AGC Has Digital Control S em iconductor I A p p li c a t i o n N o te J u n e 1998 AN 9816 Introduction G = K V . n |V B3| e q - 1 The gain-control and bias-stability parameters of the circuit depend on the transistor matching, so the circuit uses a
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50MHz.
hfa3102-matched
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MJE1100 MOTOROLA
Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
Text: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209
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PL500
2C6045
2C6042
2N6043
2N6044
2N6045
MJE1100
MJE1101
MJE1102
MJE1100 MOTOROLA
transistor MJE6043
2N6041
MJE1103
transistor MJE1103
mje6044
MJE1090
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t0261aa
Abstract: No abstract text available
Text: MO TO RO LA SC X ST RS /R F b3 b 7 S S M 0 0 ^ 3 2 bfiE D MTT MOTb MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Medium Power Field Effect Transistor M M FT1N 10T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device
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OT-223
t0261aa
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a32s
Abstract: atm dun hen vd MTM5N35
Text: MOTOROLA SC 1 *4E D I XSTRS/R F b3 t.?e S 4 DGTGQO3 1 | MOTOROLA 7 - - 3 m SEM ICONDUCTOR TECHNICAL DATA MTM5N35 MTM5N4Q MTP5N35 MTP5N40 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS ¥ These TM O S Power FETs are designed for high voltage, high
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MTM5N35
MTP5N35
MTP5N40
L1I78SC
a32s
atm dun hen vd
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I B IPO LA R D IG IT A L ICs b3 E • bSM'ìfiB? D D I S l l b MITSUBISHI D G T L 3D2 « « 1 1 3 M 54580P LOGIC 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54580P, 7-channel source driver, consists of 7 PNP and 7 NPN transistors connected to form high current gain
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54580P
150mA
M54580P,
150mA
M54580P
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TP3020A
Abstract: CER40 case 244-04 TP3020
Text: b'ìE D MO TO R O L A SC X ST RS /R F b3 b 7 B S 4 DIDDflfll «riOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TP3020A The RF Line U H F P o w er Transistor The TP3020A is designed for use in the 900 MHz mobile radio band. Its high gain and ability to operate Class A makes it an ideal choice as a driver operating
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b3b7E54
TP3020A
TP3020A
244-Typ
CER40
case 244-04
TP3020
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MTH8N55
Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
Text: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high
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MTH8N55
MTH8N60
MTM8N60
Y145M.
O-218AC
DIODE MOTOROLA B33
3fc relay
000073S
AN569
U055
TO 521 MH
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transistor 224-1 base collector emitter
Abstract: No abstract text available
Text: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura
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M54568L
M54568L,
M54568L
transistor 224-1 base collector emitter
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