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    TRANSISTOR B3 OF Search Results

    TRANSISTOR B3 OF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B3 OF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D 1437 transistor

    Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16
    Text: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906 D 1437 transistor 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906

    2n3906 PNP transistor DC current gain

    Abstract: 2N3904 NPN TRANSISTOR OPERATIONS
    Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 mA to


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906 2n3906 PNP transistor DC current gain 2N3904 NPN TRANSISTOR OPERATIONS

    MMPQ6700

    Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
    Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complementary devices can be used in switches with collector currents of 10 µA to


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906 MMPQ6700 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: MMPQ6502 MMPQ6502 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6502 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and


    Original     		PDF MMPQ6502 SOIC-16 PN2222A PN2907A

    D 1437 transistor

    Abstract: CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16
    Text: MMPQ6502 MMPQ6502 B E4 4 B3 E1 B1 E2 SOIC-16 B2 E3 C C4 4 C3 C1 C2 C1 C C2 3 Pin #1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C 2 B2 E 2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and


    Original     		PDF MMPQ6502 SOIC-16 PN2222A PN2907A D 1437 transistor CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16

    transistor j 108

    Abstract: No abstract text available
    Text: ~ HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-B3 Series ~ 110 ~100 Ct., [:;3 1=1. -~I 1 TO-220 TRANSISTOR I I I A. N.C. Horiz. Device Only Mounted to G-10. 70 B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. ~ aJ < UJ !Q ~


    Original     		PDF LATO127B3CB w/TIP-29C O-220) O-220 LATO127B4CB transistor j 108

    transistor TO-3 Outline Dimensions

    Abstract: transistor c 129 LA394B4 LATO3B4B
    Text: ~ HEAT DISSIPATORS FOR METAL CASE, CASE-MOUNTED LA-B3 Series for TO-3 Outline LATO3B3CB w/2N3055 ~11° ~ <0:> 100 1 fz w m ~ < w > a3 < w 00 0: 0.: ~ w fw 00 ~1 ~1-+;!~ A SEMICONDUCTORS YCI C B I~ D /1 90 / "./1 L -f 80 ~,. r TO-3 TRANSISTOR / .2: '"'""


    Original     		PDF w/2N3055 LA407B4U LA40JB4CB LA407B4B LA407B4 LA394B4CB LA394B4B LA394B4 LAJ94B4U transistor TO-3 Outline Dimensions transistor c 129 LA394B4 LATO3B4B

    CQM1-OD212

    Abstract: CQM1-OD214 CQM1-OD213 CQM1-OD215 CQM1-OA221 CQM1-OD211 a7 transistor transistor A6 b7 tRANSISTOR CQM1OD213
    Text: Transistor Output Units 8-point Transistor Output Unit Item Max. Switching Capacity CQM1-OD211 2 A at 24 VDC +10%/ –15% 5 A/Unit Leakage Current 0.1 mA max. Residual Voltage 0.7 V max. ON Delay 0.1 ms max. OFF Delay 0.3 ms max. No. of Outputs 8 points 8 points/common, 1 circuit


    Original     		PDF CQM1-OD211 OUT07 OUT00 OUT03 OUT04 OUT05 CQM1-OD212 CQM1-OD214 CQM1-OD213 CQM1-OD215 CQM1-OA221 CQM1-OD211 a7 transistor transistor A6 b7 tRANSISTOR CQM1OD213

    molex Connector 51030-0330

    Abstract: GT1-ID32ML-1 D-Sub 25-pin Connector GT1-OD16 G70D-SOC16-1 51030-0330 XW2D-40G6 GT1-ID16-1 FCN363J040-AU GT1-ID16
    Text: Digital I/O Units Digital I/O Units Compatible with MULTIPLE I/O TERMINAL • Terminal block, connector, and high-density connector models are available. • The circuit block of the terminal block model can be


    Original     		PDF D16MX D16ML D32ML D16DS molex Connector 51030-0330 GT1-ID32ML-1 D-Sub 25-pin Connector GT1-OD16 G70D-SOC16-1 51030-0330 XW2D-40G6 GT1-ID16-1 FCN363J040-AU GT1-ID16

    transistor B42

    Abstract: AX400 b42 transistor
    Text: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.


    OCR Scan     		PDF b457S25 PH107 T-41-63 transistor B42 AX400 b42 transistor

    MJE305

    Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
    Text: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -


    OCR Scan     		PDF MJE2955T MJE3055T MJE2955T, MJE305 MJE3055T MJE30*T MJE2955T-MJE3055T

    BLW81

    Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
    Text: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.


    OCR Scan     		PDF 7Z77164 BLW81 IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer

    BLY91

    Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
    Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _


    OCR Scan     		PDF 711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips

    K1118

    Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
    Text: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier


    OCR Scan     		PDF b3b725M MJ2955- MJ2955A MJ3029 K1118 MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20

    Untitled

    Abstract: No abstract text available
    Text: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and


    OCR Scan     		PDF MUN5111T1/D SC-70/SOT-323 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1

    hfa3102-matched

    Abstract: No abstract text available
    Text: High Frequency AGC Has Digital Control S em iconductor I A p p li c a t i o n N o te J u n e 1998 AN 9816 Introduction G = K V . n |V B3| e q - 1 The gain-control and bias-stability parameters of the circuit depend on the transistor matching, so the circuit uses a


    OCR Scan     		PDF 50MHz. hfa3102-matched

    MJE1100 MOTOROLA

    Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
    Text: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209


    OCR Scan     		PDF PL500 2C6045 2C6042 2N6043 2N6044 2N6045 MJE1100 MJE1101 MJE1102 MJE1100 MOTOROLA transistor MJE6043 2N6041 MJE1103 transistor MJE1103 mje6044 MJE1090

    t0261aa

    Abstract: No abstract text available
    Text: MO TO RO LA SC X ST RS /R F b3 b 7 S S M 0 0 ^ 3 2 bfiE D MTT MOTb MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Medium Power Field Effect Transistor M M FT1N 10T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device


    OCR Scan     		PDF OT-223 t0261aa

    a32s

    Abstract: atm dun hen vd MTM5N35
    Text: MOTOROLA SC 1 *4E D I XSTRS/R F b3 t.?e S 4 DGTGQO3 1 | MOTOROLA 7 - - 3 m SEM ICONDUCTOR TECHNICAL DATA MTM5N35 MTM5N4Q MTP5N35 MTP5N40 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS ¥ These TM O S Power FETs are designed for high voltage, high


    OCR Scan     		PDF MTM5N35 MTP5N35 MTP5N40 L1I78SC a32s atm dun hen vd

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I B IPO LA R D IG IT A L ICs b3 E • bSM'ìfiB? D D I S l l b MITSUBISHI D G T L 3D2 « « 1 1 3 M 54580P LOGIC 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54580P, 7-channel source driver, consists of 7 PNP and 7 NPN transistors connected to form high current gain


    OCR Scan     		PDF 54580P 150mA M54580P, 150mA M54580P

    TP3020A

    Abstract: CER40 case 244-04 TP3020
    Text: b'ìE D MO TO R O L A SC X ST RS /R F b3 b 7 B S 4 DIDDflfll «riOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TP3020A The RF Line U H F P o w er Transistor The TP3020A is designed for use in the 900 MHz mobile radio band. Its high gain and ability to operate Class A makes it an ideal choice as a driver operating


    OCR Scan     		PDF b3b7E54 TP3020A TP3020A 244-Typ CER40 case 244-04 TP3020

    MTH8N55

    Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
    Text: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high


    OCR Scan     		PDF MTH8N55 MTH8N60 MTM8N60 Y145M. O-218AC DIODE MOTOROLA B33 3fc relay 000073S AN569 U055 TO 521 MH

    transistor 224-1 base collector emitter

    Abstract: No abstract text available
    Text: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura­


    OCR Scan     		PDF M54568L M54568L, M54568L transistor 224-1 base collector emitter