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    MJE3055T Search Results

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    MJE3055T Price and Stock

    onsemi MJE3055TG

    Bipolar Transistors - BJT 10A 60V 125W NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MJE3055TG 11,504
    • 1 $0.53
    • 10 $0.52
    • 100 $0.471
    • 1000 $0.348
    • 10000 $0.348
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    Verical MJE3055TG 2,150 100
    • 1 -
    • 10 -
    • 100 $0.6955
    • 1000 $0.4458
    • 10000 $0.4261
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    MJE3055TG 1,400 50
    • 1 -
    • 10 -
    • 100 $0.4576
    • 1000 $0.3471
    • 10000 $0.3268
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    STMicroelectronics MJE3055T

    Bipolar Transistors - BJT NPN Gen Pur Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MJE3055T 4,502
    • 1 $1.45
    • 10 $1.03
    • 100 $0.679
    • 1000 $0.477
    • 10000 $0.423
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    Verical MJE3055T 9,285 22
    • 1 -
    • 10 -
    • 100 $0.6713
    • 1000 $0.3887
    • 10000 $0.3742
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    MJE3055T 8,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4091
    • 10000 $0.3951
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    Future Electronics MJE3055T Tube 14 Weeks 4,000
    • 1 $0.385
    • 10 $0.385
    • 100 $0.38
    • 1000 $0.36
    • 10000 $0.345
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    MJE3055T Tube 14 Weeks 4,000
    • 1 -
    • 10 -
    • 100 $0.38
    • 1000 $0.36
    • 10000 $0.345
    		Buy Now
    MJE3055T Tube 14 Weeks 4,000
    • 1 $0.385
    • 10 $0.385
    • 100 $0.38
    • 1000 $0.36
    • 10000 $0.345
    		Buy Now
    Quest Components MJE3055T 24
    • 1 $1.75
    • 10 $1.4
    • 100 $1.05
    • 1000 $1.05
    • 10000 $1.05
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    MJE3055T 14
    • 1 $1.75
    • 10 $1.4
    • 100 $0.875
    • 1000 $0.875
    • 10000 $0.875
    		Buy Now

    SR Components Inc MJE3055T

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MJE3055T
    • 1 -
    • 10 -
    • 100 $1.115
    • 1000 $0.829
    • 10000 $0.75
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    Motorola Semiconductor Products MJE3055T

    10A, 60V, NPN, SI, POWER TRANSISTOR, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJE3055T 1,016
    • 1 $1.8
    • 10 $1.8
    • 100 $0.9
    • 1000 $0.72
    • 10000 $0.72
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    MJE3055T 480
    • 1 $2.15
    • 10 $2.15
    • 100 $1.075
    • 1000 $0.86
    • 10000 $0.86
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    MJE3055T 124
    • 1 $4
    • 10 $4
    • 100 $2
    • 1000 $2
    • 10000 $2
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    MJE3055T 85
    • 1 $0.89
    • 10 $0.712
    • 100 $0.534
    • 1000 $0.534
    • 10000 $0.534
    		Buy Now
    MJE3055T 27
    • 1 $1.75
    • 10 $1.4
    • 100 $0.875
    • 1000 $0.875
    • 10000 $0.875
    		Buy Now
    MJE3055T 20
    • 1 $1.155
    • 10 $0.924
    • 100 $0.924
    • 1000 $0.924
    • 10000 $0.924
    		Buy Now

    SGS Thomson MJE3055T

    10A, 60V, NPN, SI, POWER TRANSISTOR, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJE3055T 119
    • 1 $2.236
    • 10 $2.236
    • 100 $1.2298
    • 1000 $1.2298
    • 10000 $1.2298
    		Buy Now
    Find more MJE3055T price and stock on Findchips.com

    MJE3055T Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJE3055T Continental Device India NPN Plastic Power Transistor Original PDF
    MJE3055T Continental Device India Plastic Power Transistors Original PDF
    MJE3055T Fairchild Semiconductor NPN SILICON TRANSISTOR Original PDF
    MJE3055T Fairchild Semiconductor NPN Silicon Transistor Original PDF
    MJE3055T Motorola 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS Original PDF
    MJE3055T On Semiconductor Power 10A 60V Discrete NPN Original PDF
    MJE3055T Sinyork Mini size of Discrete semiconductor elements Original PDF
    MJE3055T STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
    MJE3055T USHA NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. Original PDF
    MJE3055T Wing Shing Computer Components SILICON EPITAXIAL PLANAR TRANSISTOR Original PDF
    MJE3055T Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
    MJE3055T Central Semiconductor Power Transistors Scan PDF
    MJE3055T Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    MJE3055T Fairchild Semiconductor NPN SILICON TRANSISTOR Scan PDF
    MJE3055T Mospec POWER TRANSISTORS(10A,60V,75W) Scan PDF
    MJE3055T Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE3055T Motorola European Master Selection Guide 1986 Scan PDF
    MJE3055T Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJE3055T Unknown Transistor Replacements Scan PDF
    MJE3055T Unknown Transistor Replacements Scan PDF

    MJE3055T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE3055T NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


    Original     		MJE3055T MJE3055T O-220 QW-R203-011 PDF

    transistor MJE3055T

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TRANSISTOR MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER


    Original     		MJE3055T/MJE2955T O-220 transistor MJE3055T PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO


    OCR Scan     		MJE3055T PDF

    221D

    Abstract: AN1040 MJE2955T MJE3055T MJF2955 MJF3055
    Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T


    Original     		MJF3055 MJF2955 MJE3055T MJE2955T E69369, u8000 MJF3055/D 221D AN1040 MJE2955T MJF2955 MJF3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE3055T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


    Original     		MJE3055T O-220 200mA PDF

    MJE3055T

    Abstract: MJE305
    Text: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 • High Current Gain-Bandwidth Product fT = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector-Emitter Voltage


    Original     		MJE3055T O-220 MJE3055T MJE305 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T


    Original     		MJF3055 MJF2955 AN1040. PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE3055T NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


    Original     		MJE3055T MJE3055T O-220 QW-R203-011 PDF

    transistor MJE3055T

    Abstract: transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 60V(Min) ·High DC Current Gain: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching


    Original     		MJE3055T MJE2955T 500kHz transistor MJE3055T transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955 PDF

    MJE3055

    Abstract: MJE3055T
    Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		MJE3055T O-220 MJE3055 MJE3055T PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free


    Original     		MJE3055T MJE3055T MJE3055TL-TA3-T MJE3055TG-TA3-T MJE3055TL-TM3-T MJE3055TG-TM3-T MJE3055TL-TN3-R MJE3055TG-TN3-R O-220 O-251 PDF

    TL MJE2955T

    Abstract: JF2955
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. • Isolated Overmold Package 1500 Volts RMS Min • Electrically Similar to the Popular MJE3055T and MJE2955T


    OCR Scan     		MJE3055T MJE2955T E69369, AN1040. TL MJE2955T JF2955 PDF

    MJD2955

    Abstract: MJD3055 MJE2955T MJE3055T
    Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


    Original     		MJD2955 MJD3055 O-252 MJE2955T MJE3055T MJD2955 MJD3055 MJE2955T MJE3055T PDF

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 PDF

    CDIL MJE3055T

    Abstract: MJE2955T MJE3055T
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications


    Original     		MJE2955T MJE3055T O-220 C-120 MJE3055T-2955TRev 291102E CDIL MJE3055T PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE3055T Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		MJE3055T PDF

    MJE2955T

    Abstract: MJE3055T MJE2955T ST TO-220 JEDEC "Silicon Power Transistors" 4 npn transistor ic L7 diode mje3055T data TO-220 COMPLEMENTARY SILICON POWER TRANSISTORS
    Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and


    Original     		MJE2955T MJE3055T MJE3055T O-220 MJE2955T. O-220 MJE2955T MJE2955T ST TO-220 JEDEC "Silicon Power Transistors" 4 npn transistor ic L7 diode mje3055T data TO-220 COMPLEMENTARY SILICON POWER TRANSISTORS PDF

    mje2955t

    Abstract: mje3055t MJE2955TG MJE305 MJE30*T transistor MJE3055T
    Text: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A


    Original     		MJE2955T MJE3055T MJE2955T/D mje2955t mje3055t MJE2955TG MJE305 MJE30*T transistor MJE3055T PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD3055 MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular MJE3055T


    Original     		MJD3055 MJE3055T 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: rz 7 Ä T# SGS-THOMSON MJE2955T MJE3055T [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is


    OCR Scan     		MJE2955T MJE3055T MJE3055T O-220 MJE2955T. PDF

    0035B2

    Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
    Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


    Original     		MJD2955 MJD3055 O-252 MJE2955T MJE3055T 0035B2 MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T PDF

    mje3055T data

    Abstract: No abstract text available
    Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		MJE2955T MJE3055T MJE3055T mje3055T data PDF

    MJE2955T

    Abstract: MJE3055T
    Text: SavantIC Semiconductor Product Specification MJE2955T Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE = 20–70 @ IC = -4 Adc ·Collector–emitter saturation voltage VCE sat = -1.1 Vdc (Max) @ IC =- 4 Adc


    Original     		MJE2955T O-220 MJE3055T O-220) MJE2955T MJE3055T PDF

    Untitled

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON & *im iO T iO gS MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor In Jedec TO-220 package. It is


    OCR Scan     		MJE2955T MJE3055T MJE3055T O-220 MJE2955T. O-220 C08B1C SC0696C 300ns, PDF