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    TRANSISTOR 78 L 05 Search Results

    TRANSISTOR 78 L 05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 78 L 05 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SK80MBBB055

    Abstract: No abstract text available
    Text: SK 80 MBBB 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET ## (2## 5 5%  , 1. /*         , 1. -4 /6 7  : 7 6  , 1. -4 /6 = Values Units . 3 14 778 -8 1;< 78< ( ( 9 9 ! <4 >>> ? 7.4 / 778 -8


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    SK80MBBB055 tp055 SK80MBBB055 PDF

    mosfet transistor

    Abstract: specifications of MOSFET
    Text: SK 80 MBBB 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET ## (2## 5 5%  , 1. /*         , 1. -4 /6 7  : 7 6  , 1. -4 /6 = Values Units . 3 14 778 -8 1;< 78< ( ( 9 9 ! <4 >>> ? 7.4 / 778 -8


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    SK80MBBB055 mosfet transistor specifications of MOSFET PDF

    BFW93

    Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
    Text: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,


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    053SbOS f-31-IS Q62702-F365 Q00M73b BFW93 BFW93 transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60 PDF

    TL1451 Application note

    Abstract: HRP24 Hitachi DSA0094 HA17451 HA17451A HA17451AFP HA17451AP TL1451 TL1451A
    Text: HA17451AP/AFP Switching Regulator Controllers for DC/DC Converters ADE-204-057 Z Rev. 0 Dec. 2000 Description The HA17451 is a dual-channel switching regulator controller IC. Each channel contains the basic circuits for controlling a PWM-type switching-regulator power supply. Both channels are integrated onto the same


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    HA17451AP/AFP ADE-204-057 HA17451 TL1451, TL1451 Application note HRP24 Hitachi DSA0094 HA17451A HA17451AFP HA17451AP TL1451 TL1451A PDF

    transistor BC 584

    Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
    Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4


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    bDT17fla O-92F to-02 melf-002. transistor BC 584 TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548 PDF

    2DI75D-050A

    Abstract: DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT
    Text: 2DI75D-050A 75a /<7- -)V POWER TRANSISTOR MODULE i F e a tu re s • 7 'J — • h F E ^ ftt' •m m X — KF*3W Including Free Wheeling Diode High DC Current Gain Insulated Type If f liÉ : A p p lic a t io n s • High Power Switching • AC i AC Motor Controls


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    2DI75D-050A E82988 DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT PDF

    BUS14

    Abstract: transistor 9455 BUS14A con20a 35-609 z8j378
    Text: 4 05 92 12:09 0455 SEMELAB L I M I T E D 552612 — F ARNELL L w £ BUS14 3 5 ° [ - G o ^ / G i BUS14A O SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-oassivated n-p-n power transistors in a TC -3 envelooe, indended for use in converters, inverters, switching regulators, m otor control systems etc.


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    BUS14 BUS14A 3US14 3US14A lC-20 BUS14 transistor 9455 BUS14A con20a 35-609 z8j378 PDF

    TRANSISTOR BFW 11

    Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
    Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use


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    053SbOS Q62702-F365 a23SbQS 00DM73b TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83 PDF

    ic 4027

    Abstract: 3019 npn transistor transistor 30 j 124 7498 ic B12V105 transistor s parameters noise Silicon Bipolar Transistor 35 MICRO-X ic 4027 information microwave transistor SOT-23J
    Text: BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar


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    B12V105 B12V105 OT-23, OT143, unencaps143 ic 4027 3019 npn transistor transistor 30 j 124 7498 ic transistor s parameters noise Silicon Bipolar Transistor 35 MICRO-X ic 4027 information microwave transistor SOT-23J PDF

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


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    23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A PDF

    62 01071

    Abstract: 3019 Transistor BRF510 c 3198 transistor ic 7413 datasheet TRANSISTOR 4841 IC 4027 transistor 1047 03-198 Bipolarics* BRF510
    Text: BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' BRF510is a high performance silicon bipolar


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    BRF510 BRF510is BRF510an OT-23, OT-143, unencapsulate74 62 01071 3019 Transistor BRF510 c 3198 transistor ic 7413 datasheet TRANSISTOR 4841 IC 4027 transistor 1047 03-198 Bipolarics* BRF510 PDF

    6DI30MA-050

    Abstract: 1251C 251C M603 T460 T930 diode 20D JT diode
    Text: 6DI30MA-050 : Outline Drawings POWER TRANSISTOR MODULE : Features • @ S h FE High DC Current Gain • High Speed Switching : A p p lic a tio n s • 9 • ffkifrMWifc General Purpose Inverter Uninterruptible Power Supply • N C lfE H M # • □ tH"A Servo & Spindle Drive for NC Machine Tools


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    6DI30MA-050 I95t/R89) 6DI30MA-050 1251C 251C M603 T460 T930 diode 20D JT diode PDF

    TRANSISTOR MARKING CODE R2A

    Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1
    Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage


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    DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1 PDF

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


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    O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor PDF

    31lF

    Abstract: No abstract text available
    Text: International IOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.603 05/97 HFA08TB120S Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions


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    HFA08TB120S 140nC HFA08TB120S 31lF PDF

    IR 1838 T

    Abstract: 1838 t
    Text: International TOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions


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    HFA16TB120S 260nC HFA16TB120S IR 1838 T 1838 t PDF

    transistor Kd 505

    Abstract: k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6
    Text: TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st DATE - p 0 0 28N0V2006 ECO — 05 — Ö9 78 8058 & 8060 Series DWN APVD Kb i/ n d e s c r ip t io n L J Transisto r Sockets 8060-1G11 8060-1G6 FEATURES: — 1^ PERFORMANCE SPECIFICATIONS:


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    28N0V2006 8060-1G11 8060-1G6 MIL-S-S3502/2 MIL-S-83502/5. transistor Kd 505 k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6 PDF

    Untitled

    Abstract: No abstract text available
    Text: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz


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    AT-41486 vailable111 AT41486 5965-8928E 5968-2031E PDF

    NE24600

    Abstract: NE24620 2SC2952 2SC2953 NE24615
    Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :


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    tj4S74m 00G237S NE24600 NE24615 NE24620 NE24620 NE246 preve35 2SC2952 2SC2953 PDF

    ML63SA33

    Abstract: No abstract text available
    Text: ML63S ML63S Series DC-DC Converter  Application  Features      Power Source of Portable Products Palmtops Portable Cameras and Video Recorders Wireless mouse and keyboard  Ordering Information Designator a b c d e ML63S Version ML63SA


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    ML63S ML63S ML63SA ML63SB ML63SC ML63SD ML63SE ML63SF 500mW) ML63SA33 PDF

    SOT89 MARKING CODE B2

    Abstract: No abstract text available
    Text: ML63S ML63S Series DC-DC Converter  Application  Features      Power Source of Portable Products Palmtops Portable Cameras and Video Recorders Wireless mouse and keyboard  Ordering Information Designator a b c d e ML63S Version ML63SA


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    ML63S ML63S ML63SA ML63SB ML63SC ML63SD ML63SE ML63SF 500mW) SOT89 MARKING CODE B2 PDF

    free transistor equivalent book

    Abstract: free all transistor equivalent book CP Clare RELAY CP Clare
    Text: CP Clare ITC135P Performance Specifications CORPORATION ITC135P Integrated Telecom Circuit DESCRIPTION “1 " . v f The Integrated Telecom Circuit, Model ITC135P, features the combined circuitry of the following, all in a single 16-pin SOIC package: • Form A solid state relay for use as a hookswitch


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    ITC135P ITC135P ITC135P, 16-pin 1-800-CPCLARE free transistor equivalent book free all transistor equivalent book CP Clare RELAY CP Clare PDF

    CP Clare RELAY

    Abstract: CP Clare RELAY he
    Text: CPCIare CORPORATION ITC117PL Performance Specifications IT C 117 PL Integrated Telecom Circuit DESCRIPTION The Integrated Telecom Circuit, Model ITC117PL, features the combined circuitry for; • Form A solid state relay for use as a hookswitch with current limiting capabilities


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    ITC117PL ITC117PL, 16-pin 117PL 120mA ITC117PL CP Clare RELAY CP Clare RELAY he PDF

    AVANTEK transistor

    Abstract: No abstract text available
    Text: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:


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    AT-64023 AT-64023 AVANTEK transistor PDF