M208 Search Results

"Schottky Barrier Diodes"

Abstract: dh38 dh379 DH378 DH385
Contextual Info: DH378.DH385 G a A s S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Chip diodes : 2 to 60GHz Case style flexibility M208, BH10, F51. Operating frequency range : packaged diodes : 2 to 40GHz A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used

Contextual Info: HUES' MOLDED INDUCTORS i m P SERIES um SPECIFICATIONS - 5 5 to + 12 5 'C 1000 M il Min. 1000 VAC Min Per MIL-STD-202, M208 Per MIL-STD-202, M106 Temperature Range Insulation Resistance • Precision performance per MIL-C-15305! ■ Molded construction provides superior

Contextual Info: 70-W212NMA300SC-M208P preliminary datasheet mixed voltage NPC Application flow MNPC 4w 1200V/300A General conditions VGEon VGEoff Rgon Rgoff half bridge IGBT = 15 V = -15 V = 3,5 Ω * = 3,5 Ω * neutral point IGBT VGEon = 15 V VGEoff = -15 V Rgon = 2Ω*

TSOP 56 socket

Abstract: TSOP 56 Package "Turpro 840" E28F016SA TSOP 54 socket bytek promax F2087 AS-56-40-03TS-6YAM-GANG-S programming adapter microsystems
Contextual Info: M2087 Specification Number: _ PROGRAMMING ADAPTER SPECIFICATION Item: Description: 564003TS600YAMS AS-56-40-03TS-6YAM-GANG-S Rev. B CONNECTION TABLE: REPLACEMENT SOCKET: S-TSO-00-056-A Call Emulation Technology for a replacement socket price and delivery quote.

M208A

Abstract: M208D M208F bh16
Contextual Info: PACKAGES CODIFICATION PACKAGE STYLE 1 CODE _ I_ BH4 50 BH15 51 BH16 52 BH10 53 BH165 54 BH155 55 F27 70 F60 71 F51 72 F54S 74 F30 75 M208A 80 M208B 81 M208C 82 M208D 83 M208E 84 M208F 85 W1 90 W2 91 W3 92 W4 93 W5 95 THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES

Contextual Info: Tantalum Chip Capacitors SpeedPower ll, Low ESR Ordering code: Date: B45006A476*M208 July 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: 70-W612M3A300SC-M208E datasheet flow MNPC 4w 1200V/300A Features FlowScrew WideBody 12mm housing ● Mixed voltage NPC ● Low inductive ● High power screw interface ● Integrated DC-snubber capacitors Target Applications ● Solar inverter ● UPS Schematic

Contextual Info: M2080/81/82 M2085/86/87 Preliminary Information Integrated Circuit Systems, Inc. VCSO FEC PLL WITH AUTOSWITCH FOR SONET/OTN PIN ASSIGNMENT 9 x 9 mm SMT FIN_SEL1 GND P_SEL2 DIF_REF0 nDIF_REF0 REF_SEL DIF_REF1 nDIF_REF1 VCC GENERAL DESCRIPTION 27 26 25 24

m208

Abstract: M2081 M2082 GR-253 M2080 M20822 M20801 OTU1
Contextual Info: M2080/81/82 M2085/86/87 Preliminary Information Integrated Circuit Systems, Inc. VCSO FEC PLL WITH AUTOSWITCH FOR SONET/OTN PIN ASSIGNMENT 9 x 9 mm SMT FIN_SEL1 GND P_SEL2 DIF_REF0 nDIF_REF0 REF_SEL DIF_REF1 nDIF_REF1 VCC GENERAL DESCRIPTION 27 26 25 24

M208F

Contextual Info: MICROWAVE SILICON COMPONENTS Case styles M208f Cb=0.12pF S268/W1 F 0.06 E 0.55 D 5 0.1 0.65 .0024 Cb=0.2pF .024 .035 0.51 0.60 .020 .024 ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA .026 .200 E 0.21 0.31 .008 .012 D 1.71 2.00 .067 .079 .022 9.8 10.2 .392 .408 1.35

Contextual Info: 70-W212NMA300SC-M208P datasheet flow MNPC 4w 1200V/300A Features flow SCREW 4w housing ● Mixed voltage NPC ● Low inductive ● High power screw interface ● Integrated DC-snubber capacitors Target Applications ● Solar inverter ● UPS Schematic ● High speed motor drive

Contextual Info: PAGE NBR 1 PACKAGING PROCESS SHEET STANDARD PACKAGING PROCESS FOR CATALOG NBR 1488991-2 00 CURRENT UM PC ORG CODE 0K00 PROD CDE M208 SUPPLIER MFG DATE 02/23/05 COUNTRY CODE US TRADEMARK NM STANDARD QUANTITY 750 DESCRIPTION STANDARD LEVEL 400 PRODUCT DESC 3P FML ASSY,SEAL,STD,B KEY,NOC

Contextual Info: M2080/81/82 M2085/86/87 Preliminary Information Integrated Circuit Systems, Inc. VCSO FEC PLL WITH AUTOSWITCH FOR SONET/OTN PIN ASSIGNMENT 9 x 9 mm SMT FIN_SEL1 GND P_SEL2 DIF_REF0 nDIF_REF0 REF_SEL DIF_REF1 nDIF_REF1 VCC GENERAL DESCRIPTION 27 26 25 24

Contextual Info: M2080/81/82 M2085/86/87 Preliminary Information Integrated Circuit Systems, Inc. VCSO FEC PLL WITH AUTOSWITCH FOR SONET/OTN PIN ASSIGNMENT 9 x 9 mm SMT FIN_SEL1 GND P_SEL2 DIF_REF0 nDIF_REF0 REF_SEL DIF_REF1 nDIF_REF1 VCC GENERAL DESCRIPTION 27 26 25 24

S516EWA

Abstract: F512SRWB S516GWA D512GWB S326GWA 333UYD everlight D431S B1001GWA 333HRC6
Contextual Info: PCN Everlight Products PCN #: EL-PCN-2005/010 Article 103GD 103HD 103YD 11-21SRC/TR8 11-21UGC/TR8 11-21VGC/TR8 11-22SDRUGC/S530-A2/TR8 12-215UGC/TR8 12-215VGC/S105 12-215VGC/S105-A2/TR8 12-215VGC/TR8 12-21SRC/TR8 12-21VGC/TR8 12-22SDRUGC/S530-A2/TR8 1259-7EVGW

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction

018pF

Contextual Info: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,

DH292

Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.

Contextual Info: • 2.54mm 025 C ^011^43 OOOOlfc.7 bbS o n n e c t o r s S u r f a c e M o u n t Pin H e a d e r s PITCH A range of 0 .6 3 5 mm square pin headers, suitable for suface mount applications. • • • H igh temperature thermoplastic m oulding U L94V-0. Packed in tubes.fPick a n a Place only .

Contextual Info: A B C ÇW I \a/A D G 1Q 2 3 3 4 Steckbereich ähnlich I mating are a similar to IEC 169-16 M ontagedurchbruch I panel c u t-o u t Für Kabel / For cab Ie Gr Typ / t y p e 5 Kabe I z u s c h n i 11 S t r i p p i n g d¡mension S e mi - R i g i d 7 U T - 141

1DI200H-055

Abstract: 1DI200H D1200F ETN81-055 1D1200K-055 1di50e-055 1DI200h055 1di100e 1DI75E-055 D1240A
Contextual Info: » COLLMER . - I SEMICONDUCTOR INC 2SE t Bi 2S3S712 OOOIOIS 0 • V i 33-J.f T -3 3 ' 3 5 :18 600 volts class power transistor modules Power transistors and free wheels are built into one package. All terminals are insulated from mounting plate. Best suited for m otor control applications with 2 2 0 to 2 4 0 volts inputs.

0X020F

Abstract: ANSI/EOS/ESD S3.1 M2080 MMC2075 MMC2080
Contextual Info: EVB2080 Evaluation Board EVB2080 User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described

RSF 800

Abstract: F27D EH50151 DH50204 EH50204 DH50156 M208
Contextual Info: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction