VIMOS RF Power Transistor Mounting
Abstract: No abstract text available
Text: RF Power Transistor Mounting VIMOS Product Portfolio I. SM200 Package Surface Mount Substrate ASI Semiconductor recommends using the solder reflow criteria as specified in JEDEC Standard J-STD-020D.1 shown below. VIMOS RF Power Transistor Mounting Profile
|
Original
|
PDF
|
SM200
J-STD-020D
VIMOS RF Power Transistor Mounting
|
to252 footprint wave soldering
Abstract: B1580
Text: Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTB1580J3 BVCEO IC RCESAT -120V -4A 600mΩ Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
|
Original
|
PDF
|
C655J3
BTB1580J3
-120V
BTB1580J3
O-252
UL94V-0
to252 footprint wave soldering
B1580
|
D1980
Abstract: BTD1980J3 Width380S
Text: CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2209.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1980J3 BVCEO IC RCESAT 120V 4A 600mΩ Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
|
Original
|
PDF
|
C654J3
BTD1980J3
BTD1980J3
O-252
UL94V-0
D1980
Width380S
|
PT10m
Abstract: A1210 BTA1210J3
Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
|
Original
|
PDF
|
C656J3
BTA1210J3
-120V
BTA1210J3
O-252
UL94V-0
PT10m
A1210
|
transistor c1510
Abstract: C1510 c1510 transistor C-1510 BTC1510J3
Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510J3 Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 1/7 150V 10A 220mΩ Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
|
Original
|
PDF
|
BTC1510J3
C652J3
BTC1510J3
O-252
O-252
R2120
C652J3
UL94V-0
transistor c1510
C1510
c1510 transistor
C-1510
|
D2195
Abstract: D219
Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD2195J3 Description Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 1/6 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
|
Original
|
PDF
|
BTD2195J3
C654J3
BTD2195J3
O-252
UL94V-0
D2195
D219
|
transistor c1510
Abstract: c1510 transistor c1510 C-1510 BTC1510I3 C652I3
Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510I3 Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date :2009.02.04 Page No. : 1/6 150V 10A 220mΩ Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
|
Original
|
PDF
|
BTC1510I3
C652I3
BTC1510I3
O-251
R2120
UL94V-0
transistor c1510
c1510 transistor
c1510
C-1510
C652I3
|
CD9014
Abstract: CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation
|
Original
|
PDF
|
ISO/TS16949
CD9014
100uA,
C-120
CD9014
CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
|
CD9015
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation
|
Original
|
PDF
|
ISO/TS16949
CD9015
100uA,
C-120
CD9015
|
mmbt9014
Abstract: MMBT9014G MMBT9015
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 Lead-free: MMBT9014L Halogen-free:MMBT9014G
|
Original
|
PDF
|
MMBT9014
450mW)
MMBT9015
MMBT9014L
MMBT9014G
MMBT9014-x-AE3-R
MMBT9014L-x-AE3-R
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
mmbt9014
MMBT9014G
MMBT9015
|
UTC9014
Abstract: utc 9014 9015 TO-92 transistor 9014 c
Text: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 ORDERING INFORMATION Ordering Number
|
Original
|
PDF
|
450mW)
9015L-x-T92-B
9015G-x-T92-B
9015L-x-T92-K
9015G-x-T92-K
9015L-x-T92-R
9015G-x-T92-R
9015L-x-T92-B
QW-R201-032
UTC9014
utc 9014
9015 TO-92
transistor 9014 c
|
mmbt9014
Abstract: MMBT9015
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Package
|
Original
|
PDF
|
MMBT9014
450mW)
MMBT9015
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
mmbt9014
MMBT9015
|
UTC 225
Abstract: MMBT9015G MMBT9014
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 ORDERING INFORMATION Ordering Number Lead Free
|
Original
|
PDF
|
MMBT9015
450mW)
MMBT9014
MMBT9015L-x-AE3-R
MMBT9015G-x-AE3-R
OT-23
QW-R206-023
UTC 225
MMBT9015G
MMBT9014
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L
|
Original
|
PDF
|
MMBT9014
450mW)
MMBT9015
MMBT9014L
MMBT9014-x-AE3-R
MMBT9014L-x-AE3-R
OT-23
QW-R206-022
|
|
|
transistor 9015 c
Abstract: 9015 PNP
Text: UNISONIC TECHNOLOGIES CO., LTD 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 ORDERING INFORMATION Ordering Number Package
|
Original
|
PDF
|
450mW)
9015L-x-T92-B
9015G-x-T92-B
9015L-x-T92-K
9015G-x-T92-K
QW-R201-032
transistor 9015 c
9015 PNP
|
transistor 9015 c
Abstract: pnp transistor 9015 9015 TO-92 transistor c 9015 v 9015 transistor C 9015 transistor transistor 9015 Free 9014 9015* Transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 ORDERING INFORMATION Ordering Number
|
Original
|
PDF
|
450mW)
9015L-x-T92-B
9015L-x-T92-K
9015L-x-T92-T
9015G-x-T92-B
9015G-x-T92-K
9015G-x-T92-T
QW-R201-032
transistor 9015 c
pnp transistor 9015
9015 TO-92
transistor c 9015
v 9015 transistor
C 9015 transistor
transistor 9015
Free 9014
9015* Transistor
|
CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
Abstract: CD9014
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation
|
Original
|
PDF
|
CD9014
100uA,
C-120
CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
CD9014
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
PDF
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
|
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: tgr | « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity
|
OCR Scan
|
PDF
|
S9015
S9014
450mW
-100uA
-100mA
-10mA
|
Untitled
Abstract: No abstract text available
Text: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW
|
OCR Scan
|
PDF
|
S9014S
S9015S
10OmA
225mW
100uA
100mA
10VIe
300uS,
|
