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    TRANSISTOR 6015 Search Results

    TRANSISTOR 6015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6015 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    VIMOS RF Power Transistor Mounting

    Abstract: No abstract text available
    Text: RF Power Transistor Mounting VIMOS Product Portfolio I. SM200 Package Surface Mount Substrate ASI Semiconductor recommends using the solder reflow criteria as specified in JEDEC Standard J-STD-020D.1 shown below. VIMOS RF Power Transistor Mounting Profile


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    SM200 J-STD-020D VIMOS RF Power Transistor Mounting PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    to252 footprint wave soldering

    Abstract: B1580
    Text: Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTB1580J3 BVCEO IC RCESAT -120V -4A 600mΩ Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low


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    C655J3 BTB1580J3 -120V BTB1580J3 O-252 UL94V-0 to252 footprint wave soldering B1580 PDF

    D1980

    Abstract: BTD1980J3 Width380S
    Text: CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2209.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1980J3 BVCEO IC RCESAT 120V 4A 600mΩ Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low


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    C654J3 BTD1980J3 BTD1980J3 O-252 UL94V-0 D1980 Width380S PDF

    PT10m

    Abstract: A1210 BTA1210J3
    Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low


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    C656J3 BTA1210J3 -120V BTA1210J3 O-252 UL94V-0 PT10m A1210 PDF

    transistor c1510

    Abstract: C1510 c1510 transistor C-1510 BTC1510J3
    Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510J3 Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 1/7 150V 10A 220mΩ Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


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    BTC1510J3 C652J3 BTC1510J3 O-252 O-252 R2120 C652J3 UL94V-0 transistor c1510 C1510 c1510 transistor C-1510 PDF

    D2195

    Abstract: D219
    Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD2195J3 Description Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 1/6 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low


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    BTD2195J3 C654J3 BTD2195J3 O-252 UL94V-0 D2195 D219 PDF

    transistor c1510

    Abstract: c1510 transistor c1510 C-1510 BTC1510I3 C652I3
    Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510I3 Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date :2009.02.04 Page No. : 1/6 150V 10A 220mΩ Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


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    BTC1510I3 C652I3 BTC1510I3 O-251 R2120 UL94V-0 transistor c1510 c1510 transistor c1510 C-1510 C652I3 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    CD9014

    Abstract: CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation


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    ISO/TS16949 CD9014 100uA, C-120 CD9014 CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE PDF

    CD9015

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation


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    ISO/TS16949 CD9015 100uA, C-120 CD9015 PDF

    Untitled

    Abstract: No abstract text available
    Text: tgr | « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity


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    S9015 S9014 450mW -100uA -100mA -10mA PDF

    UTC9014

    Abstract: utc 9014 9015 TO-92 transistor 9014 c
    Text: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number


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    450mW) 9015L-x-T92-B 9015G-x-T92-B 9015L-x-T92-K 9015G-x-T92-K 9015L-x-T92-R 9015G-x-T92-R 9015L-x-T92-B QW-R201-032 UTC9014 utc 9014 9015 TO-92 transistor 9014 c PDF

    mmbt9014

    Abstract: MMBT9015
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ „ ORDERING INFORMATION Ordering Number Package


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    MMBT9014 450mW) MMBT9015 MMBT9014G-x-AE3-R OT-23 QW-R206-022 mmbt9014 MMBT9015 PDF

    UTC 225

    Abstract: MMBT9015G MMBT9014
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 „ ORDERING INFORMATION Ordering Number Lead Free


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    MMBT9015 450mW) MMBT9014 MMBT9015L-x-AE3-R MMBT9015G-x-AE3-R OT-23 QW-R206-023 UTC 225 MMBT9015G MMBT9014 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L „


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    MMBT9014 450mW) MMBT9015 MMBT9014L MMBT9014-x-AE3-R MMBT9014L-x-AE3-R OT-23 QW-R206-022 PDF

    MMBT9014

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ ORDERING INFORMATION Ordering Number Lead Free


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    MMBT9014 450mW) MMBT9015 MMBT9014G-x-AE3-R OT-23 QW-R206-022 MMBT9014 PDF

    transistor 9015 c

    Abstract: 9015 PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number Package


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    450mW) 9015L-x-T92-B 9015G-x-T92-B 9015L-x-T92-K 9015G-x-T92-K QW-R201-032 transistor 9015 c 9015 PNP PDF

    transistor 9015 c

    Abstract: pnp transistor 9015 9015 TO-92 transistor c 9015 v 9015 transistor C 9015 transistor transistor 9015 Free 9014 9015* Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number


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    450mW) 9015L-x-T92-B 9015L-x-T92-K 9015L-x-T92-T 9015G-x-T92-B 9015G-x-T92-K 9015G-x-T92-T QW-R201-032 transistor 9015 c pnp transistor 9015 9015 TO-92 transistor c 9015 v 9015 transistor C 9015 transistor transistor 9015 Free 9014 9015* Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW


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    S9014S S9015S 10OmA 225mW 100uA 100mA 10VIe 300uS, PDF

    CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE

    Abstract: CD9014
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation


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    CD9014 100uA, C-120 CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE CD9014 PDF