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    S9014RLT1

    Abstract: No abstract text available
    Text: S9014LT1 3 1 2 SOT-23 V CEO Value 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S 0.1 S9014TLT1=14T 45 50 100 100 40 3.0 WEITRON http://www.weitron.com.tw 1/ 0.1 u 0.1 u 28-Apr-2011 S9014LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)


    Original     		PDF S9014LT1 OT-23 S9014QLT1 S9014RLT1 S9014SLT1 S9014TLT1 28-Apr-2011 OT-23

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. S9015S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY,LOW NOISE AMPLIFIER * Complement to S9014S * Collector C urrent: Ic=-100mA * Collector-Emitter Voltage: Vceo=-45V. ABSOLUTE MAXIMUM RATINGS a t TandHZ5°C


    OCR Scan     		PDF S9015S S9014S -100mA -100uA -100mA -10mA 062ii 300uS

    Untitled

    Abstract: No abstract text available
    Text: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW


    OCR Scan     		PDF S9014S S9015S 10OmA 225mW 100uA 100mA 10VIe 300uS,