2222 031 capacitor philips 2222 424
Abstract: 2222 031 capacitor philips BLF247B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain
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BLF247B
MAM098
OT262A1
SCD34
846915/1500/01/pp16
2222 031 capacitor philips 2222 424
2222 031 capacitor philips
BLF247B
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ic 4001
Abstract: ic 4001 datasheet ASI10542 ASI4001
Text: ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz
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ASI4001
ic 4001
ic 4001 datasheet
ASI10542
ASI4001
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ic 4001
Abstract: ASI10542 ASI4001
Text: ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz
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ASI4001
ASI10542
ic 4001
ASI10542
ASI4001
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ASI4001
Abstract: ic 4001 ASI10542
Text: ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A 1 ØD B 2 C .060 x 45° CHAMFER 3 E 4 FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz
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ASI4001
ASI10542
ASI4001
ic 4001
ASI10542
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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CD9014
Abstract: CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation
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ISO/TS16949
CD9014
100uA,
C-120
CD9014
CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
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CD9015
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation
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ISO/TS16949
CD9015
100uA,
C-120
CD9015
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mmbt9014
Abstract: MMBT9014G MMBT9015
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 Lead-free: MMBT9014L Halogen-free:MMBT9014G
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MMBT9014
450mW)
MMBT9015
MMBT9014L
MMBT9014G
MMBT9014-x-AE3-R
MMBT9014L-x-AE3-R
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
mmbt9014
MMBT9014G
MMBT9015
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mmbt9014
Abstract: MMBT9015
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Package
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MMBT9014
450mW)
MMBT9015
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
mmbt9014
MMBT9015
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L
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MMBT9014
450mW)
MMBT9015
MMBT9014L
MMBT9014-x-AE3-R
MMBT9014L-x-AE3-R
OT-23
QW-R206-022
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MMBT9014
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Lead Free
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MMBT9014
450mW)
MMBT9015
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
MMBT9014
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2SC3056
Abstract: No abstract text available
Text: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor
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2SC3056,
2SC3056A
2SC3056/2SC3056A
2SC3056
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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BUK856-4001Z
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-4001Z Protected Logic-Level IGBT_ _ _ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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BUK856-4001Z
T022QAB
BUK856-400
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BC250
Abstract: transistor bc250 transistor bc 102 BC 250 transistor bc 100
Text: BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its D C current gain. Plastic package = J E D E C T O -9 2 T O -1 8 com patible The ca se is im pervious to light
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BC250
BC250
transistor bc250
transistor bc 102
BC 250
transistor bc 100
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CP1005
Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I
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KM90II
KM90I5
KM901I/8
KM90II/8
KM90I4
KM9015
KM90I:
KM90i
to-92a
CP1005
9011 9012 9013 9014 9018
C 9014 transistor
transistor 9014 C npn
9011 NPN transistor
9011 transistor
9015 PNP
9016
9013 NPN Output Transistor
transistor npn c 9014
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MRF321
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 10 W - 4 0 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICO N . . . designed p rim a rily to r w ideband large-signal d riv e r and pre d rive r a m p lifie r stages in th e 2 0 0 — 50Q M H z fre q u e n c y range.
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MRF321
MRF321
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piezo microphone preamplifier
Abstract: A1070 "Microphone Preamplifier" mic electret electret mic MICROPHONE electret mic terminals SCR Phase Control IC TRANSISTOR for sending PCA1070
Text: Objective specification Philips Semiconductors Programmable analog CMOS transmission 1C PCA1070 FEATURES • Line interface with: Voltage regulator with programmable DC voltage drop Programmable set impedance Output to control an external switching MOS transistor for pulse dialling
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Untitled
Abstract: No abstract text available
Text: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW
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S9014S
S9015S
10OmA
225mW
100uA
100mA
10VIe
300uS,
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