2sa1987 transistor equivalent
Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS
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2SA1987
-230V
2SC5359
-230V
2sa1987 transistor equivalent
transistor 2SC5359
2SC5359
power amplifier 2sc5359 2sa1987 TRANSISTOR
2SA1987 2SC5359
2SA1987
power transistor audio amplifier 100w
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Untitled
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
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transistor 2SC5359
Abstract: 100-W 2-21F1A 2SA1987 2SC5359
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
transistor 2SC5359
100-W
2-21F1A
2SA1987
2SC5359
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2Sa1987
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
2-21F1A
2Sa1987
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100-W
Abstract: 2-21F1A 2SA1987 2SC5359
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
100-W
2-21F1A
2SA1987
2SC5359
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Untitled
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
2-21F1A
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Untitled
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
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transistor 2SC5359
Abstract: 2SC5359 100-W 2-21F1A 2SA1987
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C
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2SC5359
2SA1987
transistor 2SC5359
2SC5359
100-W
2-21F1A
2SA1987
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transistor 2Sc5359
Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings Tc = 25°C
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2SC5359
2SA1987
transistor 2Sc5359
2SC5359
2SA1987 2SC5359
100-W
2-21F1A
2SA1987
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transistor 2SC5359
Abstract: 2SC5359
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C
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2SC5359
2SA1987
2-21F1A
transistor 2SC5359
2SC5359
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Untitled
Abstract: No abstract text available
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C
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2SC5359
2SA1987
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Untitled
Abstract: No abstract text available
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C
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2SC5359
2SA1987
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transistor 2SC5359
Abstract: 2SC5359
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C
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2SC5359
2SA1987
2-21F1A
transistor 2SC5359
2SC5359
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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2SC4793 2sa1837
Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y
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2SA2058
2SA1160
2SC2500
2SA1430
2SC3670
2SA1314
2SC2982
2SC5755
2SA2066
2SC5785
2SC4793 2sa1837
2sC5200, 2SA1943, 2sc5198
2sC5200, 2SA1943
transistor
2SA2060
power transistor npn to-220
2sc5198 equivalent
transistor 2SC5359
2SC5171 transistor equivalent
NPN Transistor
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transistor 2SC5359
Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
transistor 2SC5359
tr 2sA1987
2SC5359
power amplifier 2sc5359 2sa1987 TRANSISTOR
2-21F1A
2SA1987
2SA1987 2SC5359
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transistor 2SC5359
Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
Text: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
transistor 2SC5359
2-21F1A
2SA1987
2SC5359
2SC53
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transistor 2SC5359
Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
transistor 2SC5359
2-21F1A
2SA1987
2SC5359
tr 2sA1987
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transistor 2SC5359
Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR
Text: 2SA1987 TO SH IBA 2 S A 1 987 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SA1987
2SC5359
transistor 2SC5359
2-21F1A
2SA1987
power amplifier 2sc5359 2sa1987 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
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2SA1987
Abstract: transistor 2SC5359 2-21F1A 2SC5359
Text: TO SHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO——230V (Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SA1987
VCEO----230V
2SC5359
2SA1987
transistor 2SC5359
2-21F1A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 3.3 + 0.2 2Q.5MAX • High Collector Voltage : V q e O “ —230V Min. • Complementary to 2SC5359 • Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SA1987
--230V
2SC5359
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1987 2 S A 1 987 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = -2 3 0 V Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SA1987
2SC5359
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
----L20
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